ROHM 2SC5825

2SC5825
Transistors
Power transistor (60V, 3A)
2SC5825
zDimensions (Unit : mm)
zFeatures
1) High speed switching.
(Tf : Typ. : 30ns at IC = 3A)
2) Low saturation voltage, typically
(Typ. : 200mV at IC = 2A, IB = 0.2mA)
3) Strong discharge power for inductive load and
capacitance load.
4) Complements the 2SA2073
CPT3
(SC-63)
<SOT-428>
(1) Base
(2) Collector
(3) Emitter
zApplications
Low frequency amplifier
High speed switching
Each lead has same dimensions
Abbreviated symbol : C5825
zStructure
NPN Silicon epitaxial planar transistor
zPackaging specifications
Package
Type
Taping
TL
Code
Basic ordering unit (pieces)
2500
2SC5825
zAbsolute maximum ratings (Ta=25°C)
Symbol
Limits
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
60
V
Emitter-base voltage
VEBO
6
V
Continuous
IC
3
A
Pulsed
ICP
6
A
1.0
W
10.0
W
Tj
150
°C
Tstg
−55 to 150
°C
Parameter
Collector current
Power dissipation
Junction temperature
Range of storage temperature
PC
∗1
∗2
∗3
∗1 Pw=10ms
∗2 Each terminal mounted on a recommended land
∗3 Tc=25°C
Rev.A
1/3
2SC5825
Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
Min.
60
60
6
−
−
Typ.
−
−
−
−
−
Max.
−
−
−
1.0
1.0
Unit
V
V
V
µA
µA
Collector-emitter saturation voltage
VCE (sat)
−
200
500
mV
hFE
120
−
390
−
fT
−
200
−
MHz
Corrector output capacitance
Cob
−
20
−
pF
Turn-on time
Storage time
Fall time
Ton
Tstg
Tf
−
−
−
50
150
30
−
−
−
ns
ns
ns
DC current gain
Transition frequency
Condition
IC=1mA
IC=100µA
IE=100µA
VCB=40V
VEB=4V
IC=2A
IB=200mA
VCE=2V
IC=100mA
VCE=10V
IE= −100mA
f=10MHz
VCB=10V
IE=0mA
f=1MHz
IC=3A
IB1=300mA
IB2= −300mA
VCC 25V
∗1
∗1
∗2
∗1 Non repetitive pulse
∗2 See Switching charactaristics measurement cicuits
zhFE RANK
Q
120−270
R
180−390
zElectrical characteristic curves
SWITCHING TIME : (ns)
100ms
10ms
1ms
DC
0.1
Single
non repetitive
Pulsed
1
10
Ton
Tf
100
10
0.01
100
0.1
1
1000
100
VCE=2V
Ta=125°C
Ta=25°C
Ta= −40°C
10
1
0.001
10
0.01
0.1
1
10
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
Fig.1 Safe Operating Area
Fig.2 Switching Time
Fig.3 DC Current Gain vs.
Collector Current (Ι)
1000
COLLECTOR SATURATION
VOLTAGE : VCE (sat) (V)
100
VCE=5V
VCE=3V
VCE=2V
10
1
0.001
10
Ta=25°C
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.4 DC Current Gain vs.
Collector Current (ΙΙ)
100
1
Ta=125°C
Ta=25°C
Ta= −40°C
0.1
0.01
0.001
10
IC / IB=10 / 1
COLLECTOR SATURATION
VOLTAGE : VCE (sat) (V)
COLLECTOR CURRENT : IC (A)
1
0.01
0.1
DC CURRENT GAIN : hFE
Ta=25°C
VCC=25V
IC / IB=10 / 1
Tstg
DC CURRENT GAIN : hFE
1000
10
0.01
0.1
1
10
100
COLLECTOR CURRENT : IC (A)
Fig.5 Collector-Emitter Saturation
Voltage vs.
Collector Current (Ι)
Ta=25°C
1
IC / IB=20 / 1
IC / IB=10 / 1
0.1
0.01
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.6 Collector-Emitter Saturation
Voltage vs.
Collector Current (ΙΙ)
Rev.A
2/3
2SC5825
Transistors
10
1
Ta=125°C
Ta=25°C
Ta= −40°C
0.1
0.001
0.01
0.1
1
COLLECTOR CURRENT : IC (A)
COLLECTOR OUTPUT
CAPACITANCE : Cob (pF)
Ta=125°C
Ta=25°C
Ta= −40°C
0.1
1
Ta=25°C
VCE=10V
100
10
10
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.7 Base-Emitter Saturation
Voltage vs.Collecter Current
100
1
0.01
0.1
10
1000
VCE=2V
TRANSITION FREQUENCY : fT (MHz)
IC / IB=10 / 1
COLLECTOR CURRENT : IC (A)
BASE EMITTER SATURATION
VOLTAGE : VBE (sat) (V)
10
1
0.001
0.01
0.1
1
10
EMITTER CURRENT : IE (A)
Fig.8 Grounded Emitter
Propagation Characteristics
Fig.9 Transition Frequency
Ta=25°C
f=1MHz
10
1
0.1
1
10
100
BASE TO COLLECTOR VOLTAGE : VCB (V)
Fig.10 Collector Output Capacitance
zSwitching characteristics measurement circuits
RL=8.3Ω
VIN
IB1
IC
VCC 25V
PW
IB2
PW 50 S
Duty cycle
1%
IB1
IB2
Base current
waveform
90%
IC
Collector current
waveform
10%
Ton
Tstg Tf
Rev.A
3/3
Appendix
Notes
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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
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ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
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and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
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cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
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Copyright © 2007 ROHM CO.,LTD.
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Appendix1-Rev2.0