2SC5825 Transistors Power transistor (60V, 3A) 2SC5825 zDimensions (Unit : mm) zFeatures 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2073 CPT3 (SC-63) <SOT-428> (1) Base (2) Collector (3) Emitter zApplications Low frequency amplifier High speed switching Each lead has same dimensions Abbreviated symbol : C5825 zStructure NPN Silicon epitaxial planar transistor zPackaging specifications Package Type Taping TL Code Basic ordering unit (pieces) 2500 2SC5825 zAbsolute maximum ratings (Ta=25°C) Symbol Limits Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 6 V Continuous IC 3 A Pulsed ICP 6 A 1.0 W 10.0 W Tj 150 °C Tstg −55 to 150 °C Parameter Collector current Power dissipation Junction temperature Range of storage temperature PC ∗1 ∗2 ∗3 ∗1 Pw=10ms ∗2 Each terminal mounted on a recommended land ∗3 Tc=25°C Rev.A 1/3 2SC5825 Transistors zElectrical characteristics (Ta=25°C) Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol BVCEO BVCBO BVEBO ICBO IEBO Min. 60 60 6 − − Typ. − − − − − Max. − − − 1.0 1.0 Unit V V V µA µA Collector-emitter saturation voltage VCE (sat) − 200 500 mV hFE 120 − 390 − fT − 200 − MHz Corrector output capacitance Cob − 20 − pF Turn-on time Storage time Fall time Ton Tstg Tf − − − 50 150 30 − − − ns ns ns DC current gain Transition frequency Condition IC=1mA IC=100µA IE=100µA VCB=40V VEB=4V IC=2A IB=200mA VCE=2V IC=100mA VCE=10V IE= −100mA f=10MHz VCB=10V IE=0mA f=1MHz IC=3A IB1=300mA IB2= −300mA VCC 25V ∗1 ∗1 ∗2 ∗1 Non repetitive pulse ∗2 See Switching charactaristics measurement cicuits zhFE RANK Q 120−270 R 180−390 zElectrical characteristic curves SWITCHING TIME : (ns) 100ms 10ms 1ms DC 0.1 Single non repetitive Pulsed 1 10 Ton Tf 100 10 0.01 100 0.1 1 1000 100 VCE=2V Ta=125°C Ta=25°C Ta= −40°C 10 1 0.001 10 0.01 0.1 1 10 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.1 Safe Operating Area Fig.2 Switching Time Fig.3 DC Current Gain vs. Collector Current (Ι) 1000 COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) 100 VCE=5V VCE=3V VCE=2V 10 1 0.001 10 Ta=25°C 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) Fig.4 DC Current Gain vs. Collector Current (ΙΙ) 100 1 Ta=125°C Ta=25°C Ta= −40°C 0.1 0.01 0.001 10 IC / IB=10 / 1 COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) COLLECTOR CURRENT : IC (A) 1 0.01 0.1 DC CURRENT GAIN : hFE Ta=25°C VCC=25V IC / IB=10 / 1 Tstg DC CURRENT GAIN : hFE 1000 10 0.01 0.1 1 10 100 COLLECTOR CURRENT : IC (A) Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current (Ι) Ta=25°C 1 IC / IB=20 / 1 IC / IB=10 / 1 0.1 0.01 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) Fig.6 Collector-Emitter Saturation Voltage vs. Collector Current (ΙΙ) Rev.A 2/3 2SC5825 Transistors 10 1 Ta=125°C Ta=25°C Ta= −40°C 0.1 0.001 0.01 0.1 1 COLLECTOR CURRENT : IC (A) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) Ta=125°C Ta=25°C Ta= −40°C 0.1 1 Ta=25°C VCE=10V 100 10 10 BASE TO EMITTER VOLTAGE : VBE (V) Fig.7 Base-Emitter Saturation Voltage vs.Collecter Current 100 1 0.01 0.1 10 1000 VCE=2V TRANSITION FREQUENCY : fT (MHz) IC / IB=10 / 1 COLLECTOR CURRENT : IC (A) BASE EMITTER SATURATION VOLTAGE : VBE (sat) (V) 10 1 0.001 0.01 0.1 1 10 EMITTER CURRENT : IE (A) Fig.8 Grounded Emitter Propagation Characteristics Fig.9 Transition Frequency Ta=25°C f=1MHz 10 1 0.1 1 10 100 BASE TO COLLECTOR VOLTAGE : VCB (V) Fig.10 Collector Output Capacitance zSwitching characteristics measurement circuits RL=8.3Ω VIN IB1 IC VCC 25V PW IB2 PW 50 S Duty cycle 1% IB1 IB2 Base current waveform 90% IC Collector current waveform 10% Ton Tstg Tf Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright © 2007 ROHM CO.,LTD. THE AMERICAS / EUPOPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0