MBR30H150CT, MBRF30H150CT, SB30H150CT-1 www.vishay.com Vishay General Semiconductor Dual Common Cathode High Voltage Schottky Rectifier Low Leakage Current 5.0 μA FEATURES ITO-220AB TO-220AB • Power pack • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop • High frequency operation 1 2 • Solder dip 275 °C max. 10 s, per JESD 22-B106 3 1 MBR30H150CT 3 2 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 MBRF30H150CT TO-262AA TYPICAL APPLICATIONS For use in high frequency inverters, freewheeling, and polarity protection application. SB30H150CT-1 PIN 1 PIN 2 PIN 3 CASE MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-262AA 1 2 3 Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test PRIMARY CHARACTERISTICS IF(AV) 2 x 15 A VRRM 150 V IFSM 260 A VF 0.75 V TJ 175 °C Package TO-220AB, ITO-220AB, TO-262AA Diode variations Dual Common Cathode per Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL MBR30H150CT MBRF30H150CT SB30H150CT-1 UNIT Maximum repetitive peak reverse voltage VRRM 150 V Working peak reverse voltage VRWM 150 V Maximum DC blocking voltage VDC 150 V Maximum average forward rectified current total device per diode IF(AV) 30 15 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 260 A Peak repetitive reverse current per diode at tp = 2 μs, 1 kHz IRRM 1.0 A Peak non-repetitive reverse surge energy per diode (8/20 μs waveform) ERSM 10 mJ Non-repetitve avalanche energy per diode at 25 °C, IAS = 2 A, L = 10 mH EAS 20 mJ dV/dt 10 000 V/μs TJ, TSTG - 65 to + 175 °C VAC 1500 V Voltage rate of change (rated VR) Operating junction and storage temperature range Isolation voltage (ITO-220AB only) from terminals to heatsink t = 1 min Revision: 13-Aug-13 Document Number: 88865 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR30H150CT, MBRF30H150CT, SB30H150CT-1 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum instantaneous forward voltage per diode VF (1) Maximum reverse current per diode at working peak reverse voltage TEST CONDITIONS VALUE IF = 15 A TC = 25 °C 0.90 UNIT IF = 15 A TC = 125 °C 0.75 IF = 30 A TC = 25 °C 0.99 IF = 30 A TC = 125 °C 0.86 TJ = 25 °C 5.0 μA TJ = 125 °C 1.0 mA IR (1) V Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL MBR MBRF MBRB UNIT RJC 1.7 4.0 1.7 °C/W Typical thermal resistance per diode ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB MBR30H150CT-E3/45 2.06 45 50/tube Tube ITO-220AB MBRF30H150CT-E3/45 2.20 45 50/tube Tube TO-262AA SB30H150CT-1E3/45 1.58 45 50/tube Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 280 Peak Forward Surge Current (A) Average Forward Current (A) 40 35 MBR, MBRB 30 MBRF 25 20 15 10 5 0 TJ = TJ Max. 8.3 ms Single Half Sine-Wave 240 200 160 120 80 40 0 25 50 75 100 125 150 175 1 10 100 Case Temperature (°C) Number of Cycles at 60 Hz Fig. 1 - Forward Current Derating Curve (Total) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Revision: 13-Aug-13 Document Number: 88865 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR30H150CT, MBRF30H150CT, SB30H150CT-1 www.vishay.com Vishay General Semiconductor 10 000 TJ = 175 °C Junction Capacitance (pF) Instantaneous Forward Current (A) 100 10 TJ = 125 °C TJ = 75 °C 1 TJ = 25 °C 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1000 100 10 0.1 1 Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode 100 Fig. 5 - Typical Junction Capacitance Per Diode 10 000 100 Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (µA) 10 Reverse Voltage (V) Instantaneous Forward Voltage (V) TJ = 175 °C 1000 TJ = 125 °C 100 10 TJ = 75 °C 1 0.1 TJ = 25 °C 0.01 10 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Characteristics Per Diode Revision: 13-Aug-13 10 MBRF 1 0.1 0.01 MBR, MBRB 0.1 1 10 100 t - Pulse Duration (s) Fig. 6 - Typical Transient Thermal Impedance Per Diode Document Number: 88865 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR30H150CT, MBRF30H150CT, SB30H150CT-1 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) ITO-220AB TO-220AB 0.055 (1.40) 0.047 (1.20) 0.398 (10.10) 0.382 (9.70) 0.343 (8.70) TYP. 0.185 (4.70) 0.169 (4.30) 0.055 (1.40) 0.049 (1.25) 0.150 (3.80) 0.139 (3.54) DIA. 0.114 (2.90) 0.106 (2.70) 0.408 (10.36) 0.392 (9.96) 0.138 (3.50) 0.122 (3.10) 0.154 (3.90) 0.138 (3.50) 0.067 (1.70) TYP. 0.331(8.40) TYP. 1 0.634 (16.10) 0.618 (15.70) PIN 2 3 0.118 (3.00) TYP. 0.630 (16.00) 0.614 (15.60) 1 0.102 (2.60) 0.087 (2.20) 0.264 (6.70) 0.248 (6.50) PIN 2 3 0.320 (8.12) 0.304 (7.72) 0.633 (16.07) 0.601 (15.67) 0.117 (2.96) 0.101 (2.56) 0.035 (0.90) 0.028 (0.70) 0.100 (2.54) TYP. 0.270 (6.88) 0.255 (6.48) 0.638 (16.20) 0.598 (15.20) 0.370 (9.40) 0.354 (9.00) 1.161 (29.48) 1.106 (28.08) 0.523 (13.28) 0.507 (12.88) 0.064 (1.62) 0.056 (1.42) 0.200 (5.08) TYP. 0.193 (4.90) 0.177 (4.50) 0.108 (2.74) 0.092 (2.34) 1.29 (3.28) DIA. 1.21 (3.08) 0.396 (10.05) 0.372 (9.45) 0.024 (0.60) 0.018 (0.45) 0.039 (1.00) 0.024 (0.60) 0.100 (2.54) TYP. 0.058 (1.47) MAX. 0.200 (5.08) TYP. 0.024 (0.60) 0.018 (0.45) TO-262AA 0.398 (10.10) 0.382 (9.70) 0.185 (4.70) 0.169 (4.30) 0.055 (1.40) 0.039 (1.00) 0.055 (1.40) 0.049 (1.25) K 0.370 (9.40) 0.354 (9.00) PIN 1 2 3 0.425 (10.80) 0.393 (10.00) 0.488 (12.4) 0.472 (12.00) 0.102 (2.60) 0.087 (2.20) 0.523 (13.28) 0.507 (12.88) 0.035 (0.90) 0.028 (0.70) 0.100 (2.54) TYP. Revision: 13-Aug-13 0.405 (10.28) 0.389 (9.88) 0.062 (1.57) 0.054 (1.37) 0.024 (0.60) 0.018 (0.45) 0.200 (5.08) TYP. Document Number: 88865 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000