BSS138BKS 60 V, 320 mA dual N-channel Trench MOSFET Rev. 1 — 12 August 2011 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible ESD protection up to 1.5 kV Very fast switching AEC-Q101 qualified Trench MOSFET technology 1.3 Applications Relay driver Low-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - 60 V VGS gate-source voltage -20 - 20 V - - 320 mA - 1 1.6 Ω Per transistor drain current ID VGS = 10 V; Tamb = 25 °C [1] Static characteristics (per transistor) RDSon [1] drain-source on-state resistance VGS = 10 V; ID = 320 mA; Tj = 25 °C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2. BSS138BKS NXP Semiconductors 60 V, 320 mA dual N-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 S1 source TR1 2 G1 gate TR1 3 D2 drain TR2 4 S2 source TR2 5 G2 gate TR2 6 D1 drain TR1 Simplified outline Graphic symbol 6 5 4 1 2 3 D1 D2 G1 G2 SOT363 (TSSOP6) S1 S2 017aaa256 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BSS138BKS TSSOP6 plastic surface-mounted package; 6 leads SOT363 4. Marking Table 4. Marking codes Type number Marking code[1] BSS138BKS LG% [1] % = placeholder for manufacturing site code. BSS138BKS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 © NXP B.V. 2011. All rights reserved. 2 of 17 BSS138BKS NXP Semiconductors 60 V, 320 mA dual N-channel Trench MOSFET 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - 60 V VGS gate-source voltage ID drain current Per transistor total power dissipation Ptot 20 V [1] - 320 mA VGS = 10 V; Tamb = 100 °C [1] - 210 mA Tamb = 25 °C; single pulse; tp ≤ 10 µs peak drain current IDM -20 VGS = 10 V; Tamb = 25 °C Tamb = 25 °C - 1.2 A [2] - 280 mW [1] - 320 mW - 990 mW Tsp = 25 °C Per device Tamb = 25 °C [2] Ptot total power dissipation - 445 mW Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C Source-drain diode source current IS Tamb = 25 °C [1] - 320 mA HBM [3] - 1500 V ESD maximum rating VESD electrostatic discharge voltage [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [3] Measured between all pins. BSS138BKS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 © NXP B.V. 2011. All rights reserved. 3 of 17 BSS138BKS NXP Semiconductors 60 V, 320 mA dual N-channel Trench MOSFET 001aao121 120 Pder (%) Ider (%) 80 80 40 40 0 -75 Fig 1. 001aao122 120 -25 25 75 125 Tj (°C) 0 -75 175 Normalized total power dissipation as a function of junction temperature Fig 2. -25 25 75 125 Tj (°C) 175 Normalized continuous drain current as a function of junction temperature aaa-000172 10 ID (A) 1 (1) 10-1 (2) (3) (4) 10-2 (5) 10-3 10-1 1 10 VDS (V) 102 IDM is a single pulse (1) tp = 1 ms (2) tp = 10 ms (3) DC; Tsp = 25 °C (4) tp = 100 ms (5) DC; Tamb = 25 °C; 1 cm2 drain mounting pad Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage BSS138BKS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 © NXP B.V. 2011. All rights reserved. 4 of 17 BSS138BKS NXP Semiconductors 60 V, 320 mA dual N-channel Trench MOSFET 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions thermal resistance from junction to ambient in free air Min Typ Max Unit - 390 445 K/W Per transistor Rth(j-a) [1] [2] thermal resistance from junction to solder point Rth(j-sp) - 340 390 K/W - - 130 K/W - - 300 K/W Per device thermal resistance from junction to ambient Rth(j-a) [1] in free air [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. 017aaa034 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 102 0.25 0.2 0.1 0.05 0 0.02 0.01 10 1 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 4. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values BSS138BKS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 © NXP B.V. 2011. All rights reserved. 5 of 17 BSS138BKS NXP Semiconductors 60 V, 320 mA dual N-channel Trench MOSFET 017aaa035 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 102 0.25 0.33 0.2 0.1 0.05 0 0.02 0.01 10 1 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for drain 1 cm2 Fig 5. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values BSS138BKS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 © NXP B.V. 2011. All rights reserved. 6 of 17 BSS138BKS NXP Semiconductors 60 V, 320 mA dual N-channel Trench MOSFET 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics (per transistor) V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 60 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = 25 °C 0.48 1.1 1.6 V IDSS drain leakage current VDS = 60 V; VGS = 0 V; Tj = 25 °C - - 1 µA VDS = 60 V; VGS = 0 V; Tj = 150 °C - - 10 µA IGSS gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C - - 10 µA VGS = -20 V; VDS = 0 V; Tj = 25 °C - - 10 µA VGS = 10 V; VDS = 0 V; Tj = 25 °C - - 1 µA VGS = -10 V; VDS = 0 V; Tj = 25 °C - - 1 µA VGS = 10 V; ID = 320 mA; Tj = 25 °C - 1 1.6 Ω VGS = 10 V; ID = 320 mA; Tj = 150 °C - 2 3.2 Ω VGS = 4.5 V; ID = 200 mA; Tj = 25 °C - 1.1 2.2 Ω VGS = 2.5 V; ID = 10 mA; Tj = 25 °C - 1.4 6.5 Ω VDS = 10 V; ID = 200 mA; Tj = 25 °C - 700 - mS - 0.6 0.7 nC - 0.1 - nC - 0.2 - nC - 42 56 pF - 7 - pF - 4 - pF - 5 10 ns RDSon gfs drain-source on-state resistance forward transconductance Dynamic characteristics (per transistor) QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time VDS = 30 V; ID = 300 mA; VGS = 4.5 V; Tj = 25 °C VDS = 10 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C VDS = 40 V; RL = 250 Ω; VGS = 10 V; RG(ext) = 6 Ω; Tj = 25 °C tr rise time - 5 - ns td(off) turn-off delay time - 38 76 ns tf fall time - 20 - ns 0.7 0.8 1.2 V Source-drain diode (per transistor) VSD source-drain voltage BSS138BKS Product data sheet IS = 300 mA; VGS = 0 V; Tj = 25 °C All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 © NXP B.V. 2011. All rights reserved. 7 of 17 BSS138BKS NXP Semiconductors 60 V, 320 mA dual N-channel Trench MOSFET aaa-000158 0.4 10 V ID (A) 2V 2.5 V aaa-000159 10-3 ID (A) 0.3 10-4 1.75 V 0.2 (1) (2) 0.5 1.0 (3) 10-5 0.1 1.5 V 0 VGS = 1.25 V 0 1 2 3 VDS (V) 4 10-6 0 Tj = 25 °C 1.5 VGS (V) 2.0 Tj = 25 °C; VDS = 5 V (1) minimum values (2) typical values (3) maximum values Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values Fig 7. aaa-000160 6 RDS(on) (Ω) Sub-threshold drain current as a function of gate-source voltage aaa-000161 6 RDS(on) (Ω) (1) 4 4 (2) (3) 2 (1) 2 (4) (5) (2) (6) 0 0 0.1 0.2 0.3 ID (A) 0 0.4 0 2 Tj = 25 °C ID = 300 mA (1) VGS = 1.5 V (1) Tj = 150 °C (2) VGS = 1.75 V (2) Tj = 25 °C 4 6 8 10 VGS (V) (3) VGS = 2.0 V (4) VGS = 2.25 V (5) VGS = 4.5 V (6) VGS = 10 V Fig 8. Drain-source on-state resistance as a function of drain current; typical values BSS138BKS Product data sheet Fig 9. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 © NXP B.V. 2011. All rights reserved. 8 of 17 BSS138BKS NXP Semiconductors 60 V, 320 mA dual N-channel Trench MOSFET aaa-000162 0.6 (1) ID (A) aaa-000163 2 a (2) 1.5 0.4 1 0.2 0.5 (2) 0 0 (1) 1.0 2.0 VGS (V) 0 -60 3.0 0 60 120 Tj = (°C) 180 VDS > ID x RDSon (1) Tj = 25 °C (2) Tj = 150 °C Fig 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values aaa-000164 2 Fig 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values aaa-000165 102 VGS(th) (V) (1) C (pF) 1.5 (2) (1) 1 10 (3) (2) 0.5 0 -60 (3) 0 60 120 Tj (°C) 180 1 10-1 1 ID = 0.25 mA; VDS = VGS f = 1 MHz; VGS = 0 V (1) maximum values (1) Ciss (2) typical values (2) Coss (3) minimum values (3) Crss Fig 12. Gate-source threshold voltage as a function of junction temperature BSS138BKS Product data sheet 10 VDS (V) 102 Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 © NXP B.V. 2011. All rights reserved. 9 of 17 BSS138BKS NXP Semiconductors 60 V, 320 mA dual N-channel Trench MOSFET aaa-000166 10 VGS (V) VDS 8 ID 6 VGS(pl) VGS(th) 4 VGS QGS1 2 QGS2 QGS 0 0 0.2 0.4 0.6 0.8 1.0 QGD QG(tot) 003aaa508 1.2 1.4 QG (nC) ID = 0.3 A; VDS = 30 V; Tamb = 25 °C Fig 14. Gate-source voltage as a function of gate charge; typical values Fig 15. Gate charge waveform definitions aaa-000167 0.4 IS (A) 0.3 (1) (2) 0.2 0.1 0 0 0.4 0.8 VSD (V) 1.2 VGS = 0 V (1) Tj = 150 °C (2) Tj = 25 °C Fig 16. Source current as a function of source-drain voltage; typical values BSS138BKS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 © NXP B.V. 2011. All rights reserved. 10 of 17 BSS138BKS NXP Semiconductors 60 V, 320 mA dual N-channel Trench MOSFET 8. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig 17. Duty cycle definition 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. BSS138BKS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 © NXP B.V. 2011. All rights reserved. 11 of 17 BSS138BKS NXP Semiconductors 60 V, 320 mA dual N-channel Trench MOSFET 9. Package outline Plastic surface-mounted package; 6 leads SOT363 D E B y X A HE 6 5 v M A 4 Q pin 1 index A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC SOT363 JEITA SC-88 EUROPEAN PROJECTION ISSUE DATE 04-11-08 06-03-16 Fig 18. Package outline SOT363 (TSSOP6) BSS138BKS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 © NXP B.V. 2011. All rights reserved. 12 of 17 BSS138BKS NXP Semiconductors 60 V, 320 mA dual N-channel Trench MOSFET 10. Soldering 2.65 solder lands 2.35 1.5 0.4 (2×) 0.6 0.5 (4×) (4×) solder resist solder paste 0.5 (4×) 0.6 (2×) occupied area 0.6 (4×) Dimensions in mm 1.8 sot363_fr Fig 19. Reflow soldering footprint for SOT363 (TSSOP6) 1.5 solder lands 0.3 2.5 4.5 solder resist occupied area 1.5 Dimensions in mm 1.3 1.3 preferred transport direction during soldering 2.45 5.3 sot363_fw Fig 20. Wave soldering footprint for SOT363 (TSSOP6) BSS138BKS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 © NXP B.V. 2011. All rights reserved. 13 of 17 BSS138BKS NXP Semiconductors 60 V, 320 mA dual N-channel Trench MOSFET 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes BSS138BKS v.1 20110812 Product data sheet - - BSS138BKS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 © NXP B.V. 2011. All rights reserved. 14 of 17 BSS138BKS NXP Semiconductors 60 V, 320 mA dual N-channel Trench MOSFET 12. 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Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 12.1 12.2 12.3 12.4 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .7 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 11 Quality information . . . . . . . . . . . . . . . . . . . . . . 11 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .12 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .14 Legal information. . . . . . . . . . . . . . . . . . . . . . . .15 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .15 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Contact information. . . . . . . . . . . . . . . . . . . . . .16 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 12 August 2011 Document identifier: BSS138BKS