New Product SiA778DJ Vishay Siliconix N-Channel 12 V and 20 V (D-S) MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel 1 12 Channel 2 20 RDS(on) (Ω) 0.029 at VGS = 4.5 V 0.034 at VGS = 2.5 V 0.044 at VGS = 1.8 V 0.065 at VGS = 1.5 V 0.225 at VGS = - 4.5 V 0.270 at VGS = - 2.5 V 0.345 at VGS = - 1.8 V 0.960 at VGS = - 1.5 V ID (A) 4.5a 4.5a 4.5a 4.5a 1.5a 1.5a 1.5a 0.5a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance • Typical ESD Performance for Channel 2: 2800 V • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 5.6 nC 1.1 nC APPLICATIONS • N-Channel Level Shift Load Switch for Portable Devices - for 0 V to 8 V Power Lines PowerPAK SC-70-6 Dual D2 1 S1 D1 2 G1 3 D2 D1 D1 6 D2 4 S2 G2 CGX Part # code G2 5 2.05 mm 200 Ω Marking Code 2.05 mm G1 XXX Lot Traceability and Date Code S1 Ordering Information: SiA778DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel 1 MOSFET S2 N-Channel 2 MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol VDS VGS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID IDM Pulsed Drain Current Source Drain Current Diode Current Maximum Power Dissipation TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IS PD Channel 1 Channel 2 12 ±8 4.5a 4.5a 4.5a, b, c 4.5a, b, c 20 4.5a 1.6b, c 6.5 5 1.9b, c 1.2b, c 20 ±6 1.5a 1.5a 1.5b, c 1.5b, c 4 1.5a 1.5b, c 5 3.2 1.9b, c 1.2b, c TJ, Tstg Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e Unit V A W - 55 to 150 260 °C THERMAL RESISTANCE RATINGS Channel 1 Parameter b, f t≤5s Steady State Symbol RthJA RthJC Channel 2 Typ. Max. Typ. Max. 52 12.5 65 16 52 20 65 25 Unit Maximum Junction-to-Ambient °C/W Maximum Junction-to-Case (Drain) Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions for channel 1 and channel 2 is 110 °C/W. Document Number: 65669 S10-0046-Rev. A, 11-Jan-10 www.vishay.com 1 New Product SiA778DJ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = 250 µA Ch-1 12 VGS = 0 V, ID = 250 µA Ch-2 20 ID = 250 µA Ch-1 ID = 250 µA Ch-2 21 ID = 250 µA Ch-1 - 2.5 V 12 mV/°C ID = 250 µA Ch-2 VDS = VGS, ID = 250 µA Ch-1 0.4 1 VDS = VGS, ID = 250 µA Ch-2 0.4 1 - 2.3 V VDS = 0 V, VGS = ± 8 V Ch-1 ± 100 nA VDS = 0 V, VGS = ± 6 V Ch-2 1 mA VDS = 12 V, VGS = 0 V Ch-1 1 VDS = 20 V, VGS = 0 V Ch-2 1 VDS = 12 V, VGS = 0 V, TJ = 55 °C Ch-1 10 VDS = 20 V, VGS = 0 V, TJ = 55 °C Ch-2 VDS ≥ 5 V, VGS = 4.5 V Ch-1 15 VDS ≥ 5 V, VGS = 4.5 V Ch-2 4 µA 10 A VGS = 4.5 V, ID = 5 A Ch-1 0.024 0.029 VGS = 4.5 V, ID = 1.6 A Ch-2 0.183 0.225 VGS = 2.5 V, ID = 4.6 A Ch-1 0.028 0.034 VGS = 2.5 V, ID = 1.5 A Ch-2 0.220 0.270 VGS = 1.8 V, ID = 4.1 A Ch-1 0.032 0.044 VGS = 1.8 V, ID = 1.3 A Ch-2 0.275 0.345 VGS = 1.5 V, ID = 2 A Ch-1 0.042 0.065 VGS = 1.5 V, ID = 0.3 A Ch-2 0.320 0.960 VDS = 6 V, ID = 5 A Ch-1 21 VDS = 10 V, ID = 1.6 A Ch-2 3.5 Ω S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Qg Ch-1 500 Channel 1 VDS = 6 V, VGS = 0 V, f = 1 MHz Ch-1 160 Ch-1 100 VDS = 6 V, VGS = 8 V, ID = 6.5 A Ch-1 9.7 15 VDS = 10 V, VGS = 5 V, ID = 1.7 A Ch-2 1.3 2.2 Ch-1 5.6 8.5 Channel 1 VDS = 6 V, VGS = 4.5 V, ID = 6.5 A Ch-2 1.1 1.7 Ch-1 0.72 Channel 2 VDS = 10 V, VGS = 4.5 V, ID = 1.7 A Ch-2 0.2 Ch-1 0.74 Qgs Qgd Rg pF Ch-2 f = 1 MHz nC 0.1 Ch-1 0.7 3.5 7 Ch-2 40 200 400 Ω Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. www.vishay.com 2 Document Number: 65669 S10-0046-Rev. A, 11-Jan-10 New Product SiA778DJ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Ch-1 10 15 Ch-2 20 30 Ch-1 10 15 Ch-2 12 20 Ch-1 22 30 Ch-2 70 105 Ch-1 10 15 Ch-2 20 30 Unit Dynamica Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr Channel 1 VDD = 6 V, RL = 1.2 Ω ID ≅ 5.2 A, VGEN = 4.5 V, Rg = 1 Ω tf Channel 2 VDD = 10 V, RL = 7.7 Ω ID ≅ 1.3 A, VGEN = 4.5 V, Rg = 1 Ω IS TC = 25 °C td(off) ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time ISM VSD Ch-1 4.5 Ch-2 1.5 Ch-1 20 Ch-2 4 IS = 5.2 A, VGS = 0 V Ch-1 0.85 1.2 IS = 1.3 A, VGS = 0 V Ch-2 0.9 1.2 Ch-1 20 40 Ch-2 50 75 Ch-1 5 10 Ch-2 30 45 trr Body Diode Reverse Recovery Charge Qrr Channel 1 IF = 5.2 A, dI//dt = 100 A/µs, TJ = 25 °C Reverse Recovery Fall Time ta Channel 2 IF = 1.3 A, dI/dt = 100 A/µs, TJ = 25 °C Reverse Recovery Rise Time tb A Ch-1 8 Ch-2 115 Ch-1 12 Ch-2 35 V ns nC ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 65669 S10-0046-Rev. A, 11-Jan-10 www.vishay.com 3 New Product SiA778DJ Vishay Siliconix CHANNEL 1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 5 20 VGS = 5 V thru 2 V 4 I D - Drain Current (A) I D - Drain Current (A) 15 VGS = 1.5 V 10 3 2 TC = 25 °C 5 1 TC = 125 °C VGS = 1 V 0 0.0 0.5 1.0 1.5 2.0 2.5 TC = - 55 °C 0 0.0 3.0 0.3 Output Characteristics 1.2 1.5 Transfer Characteristics 0.10 800 0.08 VGS = 1.5 V VGS = 1.8 V 0.06 0.04 VGS = 2.5 V 600 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0.9 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Ciss 400 Coss 200 0.02 VGS = 4.5 V Crss 0.00 0 0 5 10 15 20 0 3 6 9 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 8 12 1.6 1.5 ID = 6.5 A 1.4 VDS = 3 V 4 VDS = 9.6 V VDS = 6 V 2 1.3 (Normalized) 6 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 0.6 VGS = 4.5 V, 2.5 V, 1.8 V; ID = 5 A 1.2 1.1 VGS = 1.5 V; ID = 2 A 1.0 0.9 0.8 0 0 4 8 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 4 12 0.7 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 65669 S10-0046-Rev. A, 11-Jan-10 New Product SiA778DJ Vishay Siliconix CHANNEL 1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.08 100 R DS(on) - On-Resistance (Ω) I S - Source Current (A) 0.07 TJ = 150 °C 10 TJ = 25 °C 1 0.06 ID = 2 A; TJ = 125 °C ID = 5 A; TJ = 125 °C 0.05 0.04 ID = 5 A; TJ = 25 °C 0.03 ID = 2 A; TJ = 25 °C 0.02 0.01 0.1 0.0 0.2 0.4 0.6 0.8 1.0 0.00 0.0 1.2 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.8 20 0.7 15 Power (W) VGS(th) (V) 0.6 ID = 250 µA 0.5 10 0.4 5 0.3 0.2 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 100 1000 TJ - Temperature (°C) Pulse (s) Threshold Voltage Single Pulse Power (Junction-to-Ambient) 100 Limited by RDS(on)* I D - Drain Current (A) 10 100 µs 1 ms 1 10 ms TA = 25 °C Single Pulse 100 ms, 1 s 10 s, DC 0.1 BVDSS Limited 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 65669 S10-0046-Rev. A, 11-Jan-10 www.vishay.com 5 New Product SiA778DJ Vishay Siliconix CHANNEL 1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 15 8 Power Dissipation (W) I D - Drain Current (A) 12 9 6 Package Limited 6 4 2 3 0 0 0 25 50 75 100 125 150 25 50 75 100 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating 125 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 65669 S10-0046-Rev. A, 11-Jan-10 New Product SiA778DJ Vishay Siliconix CHANNEL 1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 110 °C/W Single Pulse 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Document Number: 65669 S10-0046-Rev. A, 11-Jan-10 www.vishay.com 7 New Product SiA778DJ Vishay Siliconix CHANNEL 2 TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 35 10-1 10-2 10-3 I GSS - Gate Current (A) I GSS - Gate Current (mA) 30 25 20 15 10 10-4 10-5 TJ = 25 °C TJ = 150 °C 10-6 10-7 10-8 5 10-9 0 10-10 0 2 4 6 8 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-to-Source Voltage Gate Current vs. Gate-to-Source Voltage 4.0 2.0 3.5 VGS = 5 V thru 2 V 1.6 I D - Drain Current (A) I D - Drain Current (A) 3.0 2.5 2.0 VGS = 1.5 V 1.5 1.2 0.8 TC = 25 °C 1.0 0.4 TC = 125 °C 0.5 VGS = 1 V 0.0 0.0 0.5 1.0 1.5 2.0 2.5 TC = - 55 °C 0.0 0.0 3.0 0.5 1.0 1.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 2.0 0.50 ID = 1.7 A VGS = 1.5 V VGS - Gate-to-Source Voltage (V) R DS(on) - On-Resistance (Ω) 0.45 VGS = 1.8 V 0.40 0.35 0.30 VGS = 2.5 V 0.25 4 VDS = 10 V VDS = 16 V 2 0.20 VGS = 4.5 V 0.15 0.0 www.vishay.com 8 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 0.0 0.3 0.6 0.9 ID - Drain Current (A) Qg - Total Gate Charge (nC) On-Resistance vs. Drain Current Gate Charge 1.2 1.5 Document Number: 65669 S10-0046-Rev. A, 11-Jan-10 New Product SiA778DJ Vishay Siliconix CHANNEL 2 TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 10 1.7 1.6 I S - Source Current (A) VGS = 4.5 V, 2.5 V, 1.8 V; ID = 1.6 A 1.4 (Normalized) R DS(on) - On-Resistance 1.5 1.3 1.2 1.1 VGS = 1.5 V; ID = 0.4 A 1.0 1 TJ = 25 °C TJ = 150 °C 0.1 0.9 0.8 0.7 - 50 - 25 0 25 50 75 100 125 0.01 0.0 150 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (°C) Source-Drain Diode Forward Voltage Normalized On-Resistance vs. Junction Temperature 1.0 8 6 0.6 Power (W) R DS(on) - On-Resistance (Ω) ID = 1.6 A 0.8 0.4 4 TJ = 125 °C 2 0.2 TJ = 25 °C 0.0 0 1 2 3 4 0 0.001 5 0.01 VGS - Gate-to-Source Voltage (V) 0.1 1 10 100 1000 Time (s) Single Pulse Power, Junction-to-Ambient On-Resistance vs. Gate-to-Source Voltage 10 0.9 Limited by RDS(on)* 100 µs I D - Drain Current (A) VGS(th) (V) 0.8 0.7 ID = 250 µA 0.6 1 1 ms 10 ms 100 ms 0.1 1 s, 10 s DC 0.5 TA = 25 °C Single Pulse 0.4 - 50 - 25 0 25 50 75 TJ - Temperature (°C) Threshold Voltage Document Number: 65669 S10-0046-Rev. A, 11-Jan-10 100 125 150 0.01 0.1 BVDSS Limited 100 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 9 New Product SiA778DJ Vishay Siliconix CHANNEL 2 TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 4 0.9 0.8 VGS(th) (V) I D - Drain Current (A) 3 2 Package Limited 0.7 ID = 250 µA 0.6 1 0.5 0 0 25 50 75 100 125 150 0.4 - 50 - 25 0 25 50 75 TC - Case Temperature (°C) TJ - Temperature (°C) Current Derating* Power Derating 100 125 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 10 Document Number: 65669 S10-0046-Rev. A, 11-Jan-10 New Product SiA778DJ Vishay Siliconix CHANNEL 2 TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.05 PDM 0.1 t1 0.02 t2 1. Duty Cycle, D = Single Pulse t1 t2 2. Per Unit Base = RthJA = 110 °C/W 3. TJM - T A = PDMZthJA(t) 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 10 -4 10 -2 10 -1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65669. Document Number: 65669 S10-0046-Rev. A, 11-Jan-10 www.vishay.com 11 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1