SiE832DF Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling • Leadframe-Based New Encapsulated Package - Die Not Exposed - Same Layout Regardless of Die Size • Low Qgd/Qgs Ratio Helps Prevent Shoot-Through • 100 % Rg and UIS Tested • Compliant to RoHS directive 2002/95/EC ID (A)a RDS(on) (Ω) Silicon Limit 0.0055 at VGS = 10 V 103 50 0.007 at VGS = 4.5 V 91 50 VDS (V) 40 Package Qg (Typ.) Limit 25 nC Package Drawing www.vishay.com/doc?73398 PolarPAK 10 D 9 G 8 S 7 S 6 D 6 7 8 9 10 APPLICATIONS D D S G D • VRM • Point-of-Load • Synchronous Rectification D G D 1 G 2 S 3 S 4 D 5 5 4 3 2 1 S Top View Bottom View Top surface is connected to pins 1, 5, 6, and 10 Ordering Information: SiE832DF-T1-E3 (Lead (Pb)-free) SiE832DF-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET For Related Documents www.vishay.com/ppg?74414 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current ID IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Avalanche Energy L = 0.1 mH IAS EAS Limit 40 ± 20 103 (Silicon Limit) 50a (Package Limit) 50a 23.6b, c 18.9b, c 80 50a 4.3b, c 35 61 104 66 5.2b, c 3.3b, c - 55 to 150 260 Unit V A mJ TC = 25 °C TC = 70 °C PD Maximum Power Dissipation W TA = 25 °C TA = 70 °C TJ, Tstg Operating Junction and Storage Temperature Range °C Soldering Recommendations (Peak Temperature)d, e Notes: a. Package limited is 50 A. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/doc?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 74414 S09-1338-Rev. C, 13-Jul-09 www.vishay.com 1 SiE832DF Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter t ≤ 10 s a, b Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain Top)a Steady State Maximum Junction-to-Case (Source)a, c Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 68 °C/W. c. Measured at source pin (on the side of the package). Symbol RthJA RthJC (Drain) RthJC (Source) Typical 20 1 2.8 Maximum 24 1.2 3.4 Unit °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VGS = 0 V, ID = 250 µA 40 Gate-Source Threshold Voltage Gate-Source Leakage VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) gfs Ciss Coss Crss Qg Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Currenta ID = 250 µA VDS = VGS , ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 40 V, VGS = 0 V VDS = 40 V, VGS = 0 V, TJ = 55 °C VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 14 A VGS = 4.5 V, ID = 12 A VDS = 15 V, ID = 13.6 A VDS = 20 V, VGS = 0 V, f = 1 MHz VDS = 20 V, VGS = 10 V, ID = 20 A Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf VDS = 20 V, VGS = 4.5 V, ID = 20 A IS ISM VSD trr Qrr ta tb TC = 25 °C Pulse Diode Forward Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. f = 1 MHz VDD = 20 V, RL = 2 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω VDD = 20 V, RL = 2 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω IS = 10 A IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C 1.5 V 43.1 - 6.9 2.2 mV/°C 3.0 ± 100 1 10 25 V nA µA A 0.0046 0.0058 86 3800 510 160 51 25 12 7 1.1 45 260 35 55 15 30 35 10 0.8 85 110 64 21 0.0055 0.007 Ω S pF 77 38 1.7 70 400 55 85 25 45 55 15 50 80 1.2 130 170 nC Ω ns A V ns nC ns Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 74414 S09-1338-Rev. C, 13-Jul-09 SiE832DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 80 20 VGS = 10 V thru 4 V 16 I D - Drain Current (A) I D - Drain Current (A) 60 40 12 TC = 125 °C 8 20 4 TC = 25 °C VGS = 3 V 0 0.0 0.4 0.8 1.2 1.6 TC = - 55 °C 0 1.5 2.0 2.0 2.5 3.0 3.5 4.0 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 4500 0.008 3600 0.007 C - Capacitance (pF) R DS(on) - On-Resistance ( ) Ciss VGS = 4.5 V 0.006 0.005 VGS = 10 V 2700 1800 900 0.004 Coss Crss 0 0.003 0 20 40 60 80 0 16 24 32 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 40 1.8 ID = 20 A ID = 14 A 1.6 8 VGS = 10 V, 4.5 V VDS = 20 V R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 8 VDS = 32 V 6 4 2 1.4 1.2 1.0 0.8 0 0 10 20 30 40 Qg - Total Gate Charge (nC) Gate Charge Document Number: 74414 S09-1338-Rev. C, 13-Jul-09 50 60 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 SiE832DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.012 R DS(on) - Drain-to-Source On-Resistance (Ω) I S - Source Current (A) 100 TJ = 150 °C 10 TJ = 25 °C ID = 14 A 0.010 0.008 TA = 125 °C 0.006 0.004 TA = 25 °C 0.002 1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 2.8 50 2.6 ID = 250 µA 40 2.2 Power (W) VGS(th) (V) 2.4 2.0 1.8 30 20 1.6 10 1.4 1.2 - 50 - 25 0 25 50 75 100 125 150 0 0.01 0.1 TJ - Temperature (°C) 1 10 100 1000 Time (s) Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 I D - Drain Current (A) Limited by RDS(on)* 10 1 ms 10 ms 1 100 ms 1s TA = 25 °C Single Pulse 0.1 10 s DC BVDSS Limited 0.01 0.01 * VGS 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which R DS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 74414 S09-1338-Rev. C, 13-Jul-09 SiE832DF Vishay Siliconix 120 120 100 100 Power Dissipation (W) I D - Drain Current (A) TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 80 60 40 80 60 40 Package Limited 20 20 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating, Junction-to-Case * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 74414 S09-1338-Rev. C, 13-Jul-09 www.vishay.com 5 SiE832DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 55 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case (Drain Top) Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Source Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?74414. www.vishay.com 6 Document Number: 74414 S09-1338-Rev. C, 13-Jul-09 Package Information Vishay Siliconix PolarPAK (Option S) M4 Product datasheet/information page contain links to applicable package drawing. 10 9 8 7 6 D G S S D M3 VIEW A E E1 T2 T1 T4 T3 Q T5 M4 M3 T3 M2 T5 Q M1 D G S S D 1 2 3 4 5 c A (Top View) Q Q H1 6 7 8 9 10 D S S G D b1 b3 H4 H3 b2 H2 b1 H1 Z K4 P1 K1 D1 D A1 K4 P1 b4 b4 DETAIL Z b5 D 5 b5 S S 4 3 b5 G D 2 1 VIEW A (Bottom View) Document Number: 73398 10-Jun-05 www.vishay.com 1 Package Information Vishay Siliconix MILLIMETERS Dim A A1 b1 b2 b3 b4 b5 c D D1 E E1 H1 H2 H3 H4 K1 K4 M1 M2 M3 M4 P1 T1 T2 T3 T4 T5 Q INCHES Min Nom Max Min Nom Max 0.75 0.80 0.85 0.030 0.031 0.033 0.00 − 0.05 0.000 − 0.002 0.48 0.58 0.68 0.019 0.023 0.027 0.41 0.51 0.61 0.016 0.020 0.024 2.19 2.29 2.39 0.086 0.090 0.094 0.89 1.04 1.19 0.035 0.041 0.047 0.23 0.33 0.43 0.009 0.013 0.017 0.20 0.25 0.30 0.008 0.010 0.012 6.00 6.15 6.30 0.236 0.242 0.248 5.74 5.89 6.04 0.226 0.232 0.238 5.01 5.16 5.31 0.197 0.203 0.209 4.75 4.90 5.05 0.187 0.193 0.199 0.23 − − 0.009 − − 0.45 − 0.56 0.020 − 0.022 0.31 0.41 0.51 0.012 0.016 0.020 0.45 − 0.56 0.020 − 0.022 4.22 4.37 4.52 0.166 0.172 0.178 0.24 − − 0.009 − − 4.30 4.50 4.70 0.169 0.177 0.185 3.43 3.58 3.73 0.135 0.141 0.147 0.22 − − 0.009 − − 0.05 − − 0.002 − − 0.15 0.20 0.25 0.006 0.008 0.010 3.48 3.64 4.10 0.137 0.143 0.150 0.56 0.76 0.95 0.22 0.030 0.037 1.20 − − 0.051 − − 3.90 − − 0.154 − − 0 0.18 0.36 0.000 0.007 0.014 0_ 10_ 12_ 0_ 10_ 12_ ECN: S−51049—Rev. B, 13-Jun-05 DWG: 5947 Note: Millimeters govern over inches www.vishay.com 2 Document Number: 73398 10-Jun-05 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PolarPAK® Option L and S 7.300 (0.287) 0.510 (0.020) 0.510 (0.020) 0.410 (0.016) 0.955 (0.038) 0.955 (0.038) 4.520 (0.178) 6.310 (0.248) 0.895 (0.035) + 0.895 (0.035) 2.290 (0.090) 0.580 (0.023) 0.580 (0.023) 0.510 (0.020) APPLICATION NOTE Recommended Minimum for PolarPAK Option L and S Dimensions in mm/(Inches) No External Traces within Broken Lines Dot indicates Gate Pin (Part Marking) Return to Index www.vishay.com 6 Document Number: 73491 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000