SiE818DF Vishay Siliconix N-Channel 75-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling • Leadframe-Based New Encapsulated Package - Die Not Exposed - Same Layout Regardless of Die Size • Low Qgd/Qgs Ratio Helps Prevent Shoot-Through • 100 % Rg and UIS Tested • Compliant to RoHS directive 2002/95/EC ID (A)a RDS(on) (Ω)e Silicon Limit 0.0095 at VGS = 10 V 79 60 0.0125 at VGS = 4.5 V 69 60 VDS (V) 75 Package Qg (Typ.) Limit 33 nC Package Drawing www.vishay.com/doc?72945 PolarPAK 10 D 9 G 8 S 7 S 6 D 6 7 8 9 10 APPLICATIONS D D S G • Primary Side Switch • Half-Bridge • Synchronous Rectification D D G D 1 G 2 S S 3 4 Top View D 5 5 4 3 2 1 Bottom View S Top surface is connected to pins 1, 5, 6, and 10 Ordering Information: SiE818DF-T1-E3 (Lead (Pb)-free) SiE818DF-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET For Related Documents www.vishay.com/ppg?74337 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy ID IDM TC = 25 °C TA = 25 °C IS L = 0.1 mH IAS EAS TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range PD Limit 75 ± 20 79 (Silicon Limit) 60a (Package Limit) 60a 16b, c 12.9b, c 80 60a 4.3b, c 50 125 125 80 5.2b, c 3.3b, c - 55 to 150 260 Unit V A mJ W TJ, Tstg °C Soldering Recommendations (Peak Temperature)d, e Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/doc?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 74485 S09-1338-Rev. B, 13-Jul-09 www.vishay.com 1 SiE818DF Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol RthJA t ≤ 10 s Maximum Junction-to-Ambienta, b Maximum Junction-to-Case (Drain Top) Steady State Maximum Junction-to-Case (Source)a, c Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 68 °C/W. c. Measured at source pin (on the side of the package). Typical Maximum 20 24 RthJC (Drain) 0.8 1 RthJC (Source) 2.2 2.7 Unit °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VGS = 0 V, ID = 250 µA 75 Gate-Source Threshold Voltage Gate-Source Leakage VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf IS ISM Pulse Diode Forward Currenta VSD Body Diode Voltage trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge ta Reverse Recovery Fall Time tb Reverse Recovery Rise Time Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. ID = 250 µA VDS = VGS , ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 75 V, VGS = 0 V VDS = 75 V, VGS = 0 V, TJ = 55 °C VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 16 A VGS = 4.5 V, ID = 14 A VDS = 20 V, ID = 16 A VDS = 38 V, VGS = 0 V, f = 1 MHz VDS = 38 V, VGS = 10 V, ID = 16 A VDS = 38 V, VGS = 4.5 V, ID = 16 A f = 1 MHz VDD = 38 V, RL = 3.8 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω VDD = 38 V, RL = 3.8 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 1.5 V 78 - 7.1 2.1 IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C 3 ± 100 1 10 25 V nA µA A 0.0078 0.0103 50 3200 330 170 63 33 11 17 0.95 30 150 40 15 15 15 40 10 TC = 25 °C IS = 10 A mV/°C 0.8 100 345 75 25 0.0095 0.0125 Ω S pF 95 50 1.5 45 225 60 25 25 25 60 15 60 80 1.2 150 520 nC Ω ns A V ns nC ns Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 74485 S09-1338-Rev. B, 13-Jul-09 SiE818DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 80 VGS = 10 V thru 4 V I D - Drain Current (A) I D - Drain Current (A) 16 60 40 20 TC = 25 °C 12 TC = 125 °C 8 TC = - 55 °C 4 3V 0 0.0 0.5 1.0 1.5 0 1.5 2.0 2.0 2.5 0.012 5000 0.011 4000 VGS = 4.5 V 0.010 0.009 VGS = 10 V Ciss 3000 2000 1000 Coss Crss 0 0.007 20 40 60 0 80 10 20 30 40 50 60 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current and Gate Voltage Capacitance 2.2 10 ID = 16 A ID = 16 A 2.0 VGS = 10 V, 4.5 V 8 VDS = 38 V 6 VDS = 60 V 4 1.8 1.6 (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 4.0 Transfer Characteristics C - Capacitance (pF) R DS(on) - On-Resistance (Ω) Output Characteristics 0 3.5 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 0.008 3.0 1.4 1.2 1.0 0.8 2 0.6 0 0 15 30 45 Qg - Total Gate Charge (nC) Gate Charge Document Number: 74485 S09-1338-Rev. B, 13-Jul-09 60 75 0.4 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 SiE818DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.030 100 ID = 16 A R DS(on) - On-Resistance (Ω) I S - Source Current (A) 0.025 TJ = 150 °C TJ = 25 °C 10 0.020 125 °C 0.015 25 °C 0.010 0.005 0.000 1 0.0 0.2 0.4 0.6 0.8 1.0 2 1.2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 2.6 50 2.4 ID = 250 µA 40 2.0 Power (W) VGS(th) (V) 2.2 1.8 1.6 30 20 1.4 10 1.2 1.0 - 50 - 25 0 25 50 75 100 125 0 0.01 150 0.1 TJ - Temperature (°C) 1 10 100 1000 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* 100 µs I D - Drain Current (A) 10 1 ms 10 ms 1 100 ms TA = 25 °C Single Pulse 0.1 1s 10 s BVDSS Limited 0.01 0.01 * VGS 0.1 1 10 DC 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 74485 S09-1338-Rev. B, 13-Jul-09 SiE818DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 140 100 120 Power Dissipation (W) I D - Drain Current (A) 80 60 Package Limited 40 100 80 60 40 20 20 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating, Junction-to-Case * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 74485 S09-1338-Rev. B, 13-Jul-09 www.vishay.com 5 SiE818DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 55 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case (Drain Top) Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 Single Pulse 0.02 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Source Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?74485. www.vishay.com 6 Document Number: 74485 S09-1338-Rev. B, 13-Jul-09 Package Information Vishay Siliconix POLARPAK™ OPTION L M4 Product datasheet/information page contain links to applicable package drawing. 10 9 8 7 6 D G S S D M2 M1 M3 D G S 1 2 3 S 4 c D 5 A (Top View) b1 H4 H1 7 S 8 S 9 G b1 H1 10 D K4 6 D θ H3 b2 H2 b3 θ P1 K3 Z P1 T5 θ T3 M3 View A E E1 T2 T4 T1 T3 θ T5 M4 A b4 K4 A1 K3 P1 b4 P1 K2 K1 D1 D 0.26 b5 S 4 b5 S 3 G 2 D 1 b5 View A (Bottom View) 0.13 0.25 DETAIL Z D 5 0.39 A 0.20 0.33 0.58 Document Number: 72945 Revision: 11-Aug-08 www.vishay.com 1 Package Information Vishay Siliconix MILLIMETERS INCHES DIM MIN. NOM. MAX. MIN. NOM. MAX. A 0.75 0.80 0.85 0.030 0.031 0.033 A1 0.00 - 0.05 0.000 - 0.002 b1 0.48 0.58 0.68 0.019 0.023 0.027 b2 0.41 0.51 0.61 0.016 0.020 0.024 b3 2.19 2.29 2.39 0.086 0.090 0.094 b4 0.89 1.04 1.19 0.035 0.041 0.047 b5 0.23 0.33 0.43 0.009 0.013 0.017 c 0.20 0.25 0.30 0.008 0.010 0.012 D 6.00 6.15 6.30 0.236 0.242 0.248 D1 5.74 5.89 6.04 0.226 0.232 0.238 E 5.01 5.16 5.31 0.197 0.203 0.209 E1 4.75 4.90 5.05 0.187 0.193 0.199 H1 0.23 - - 0.009 - - H2 0.45 - 0.56 0.018 - 0.022 H3 0.31 0.41 0.51 0.012 0.016 0.020 H4 0.45 - 0.56 0.018 - 0.022 K1 4.22 4.37 4.52 0.166 0.172 0.178 K2 1.08 1.13 1.18 0.043 0.044 0.046 K3 1.37 - - 0.054 - - K4 0.24 - - 0.009 - - M1 4.30 4.50 4.70 0.169 0.177 0.185 M2 3.43 3.58 3.73 0.135 0.141 0.147 M3 0.22 - - 0.009 - - M4 0.05 - - 0.002 - - P1 0.15 0.20 0.25 0.006 0.008 0.010 T1 3.48 3.64 4.10 0.137 0.143 0.161 T2 0.56 0.76 0.95 0.022 0.030 0.037 T3 1.20 - - 0.047 - - T4 3.90 - - 0.153 - - T5 0 0.18 0.36 0.000 0.007 0.014 θ 0° 10° 12° 0° 10° 12° ECN: T-08441-Rev. C, 11-Aug-08 DWG: 5946 Notes Millimeters govern over inches. www.vishay.com 2 Document Number: 72945 Revision: 11-Aug-08 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PolarPAK® Option L and S 7.300 (0.287) 0.510 (0.020) 0.510 (0.020) 0.410 (0.016) 0.955 (0.038) 0.955 (0.038) 4.520 (0.178) 6.310 (0.248) 0.895 (0.035) + 0.895 (0.035) 2.290 (0.090) 0.580 (0.023) 0.580 (0.023) 0.510 (0.020) APPLICATION NOTE Recommended Minimum for PolarPAK Option L and S Dimensions in mm/(Inches) No External Traces within Broken Lines Dot indicates Gate Pin (Part Marking) Return to Index www.vishay.com 6 Document Number: 73491 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000