UNISONIC TECHNOLOGIES CO., LTD 10N90 Power MOSFET 10A, 900V N-CHANNEL POWER MOSFET DESCRIPTION The UTC10N90 is a N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 10N90 is generally applied in high efficiency switch mode power supply. FEATURES * RDS(ON) =1.35Ω@VGS =10V * Lower Leakage Current: 25µA (Max.) @ VDS = 900V * Improved Gate Charge SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 10N90L-T3P-T 10N90G-T3P-T 10N90L-T47-T 10N90G-T47-T Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd Package TO-3P TO-247 Pin Assignment 1 2 3 G D S G D S Packing Tube Tube 1 of 6 QW-R502-502.F 10N90 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 900 V Gate-Source Voltage VGSS ±30 V 10 A Continuous ID Drain Current Pulsed (Note 2) IDM 40 A Avalanche Current (Note 2) IAR 10 A 794 mJ Single Pulsed (Note 3) EAS Avalanche Energy Repetitive (Note 2) EAR 28 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 1.5 V/ns Power Dissipation PD 183 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. L = 15mH, IAS = 10A, VDD = 50V, RG = 27Ω, Starting TJ = 25°C 3. ISD ≤ 10A, di/dt ≤ 190A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 250µs, Duty cycle ≤ 2% THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC RATINGS 40 0.68 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Breakdown Voltage Temperature Coefficient △BVDSS/△TJ Drain-Source Leakage Current IDSS Forward Gate- Source Leakage Current IGSS Reverse ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) Static Drain-Source On-State Resistance RDS(ON) DYNAMIC PARAMETERS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TEST CONDITIONS MIN ID=250µA, VGS=0V ID=250µ VDS=900V VGS=+30V VGS=-30V 900 VGS=VDS, ID=250µA VGS=10V, ID=5A 3.0 VGS=0V, VDS=25V, f=1.0MHz TYP 1.11 MAX UNIT V V/°C 25 µA 100 nA -100 nA 5.0 1.35 V Ω 2760 3580 245 290 105 125 pF pF pF 1.15 2 of 6 QW-R502-502.F 10N90 Power MOSFET ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP SWITCHING PARAMETERS 127 Total Gate Charge QG VGS=10V, VDS=720V, ID=10A Gate to Source Charge QGS 19.2 (Note 1, 2) Gate to Drain Charge QGD 56.8 29 Turn-ON Delay Time tD(ON) Rise Time tR 54 VDD=450V, ID=10A, RG=9.6Ω (Note 1, 2) Turn-OFF Delay Time tD(OFF) 161 Fall-Time tF 47 SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Integral Reverse Pn-Diode In Maximum Body-Diode Pulsed Current The MOSFET ISM (Note1) Drain-Source Diode Forward Voltage VSD IS=10A, VGS=0V, TJ=25°C (Note 1) 690 Body Diode Reverse Recovery Time trr IF=10A, dIF/dt=100A/µs, TJ=25°C (Note 1) Body Diode Reverse Recovery Charge QRR 11.94 Note: 1. Pulse Test: Pulse width ≤ 250µs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MAX UNIT 165 70 20 330 105 nC nC nC ns ns ns ns 10 A 40 A 1.4 V ns µC 3 of 6 QW-R502-502.F 10N90 Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-502.F 10N90 Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) RL VDS VDS 90% VDD VGS RG VGS D.U.T. 10V 10% tD(ON) Pulse Width≤1μs Duty Factor≤0.1% Switching Test Circuit 12V tF Switching Waveforms Same Type as D.U.T. 50kΩ 0.2μF tD(OFF) tR QG 10V 0.3μF QGS VDS QGD VGS DUT 3mA VGS Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 5 of 6 QW-R502-502.F 10N90 Power MOSFET TYPICAL CHARACTERISTICS Drain Current, ID (A) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-502.F