Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UF601
Power MOSFET
0.185A, 600V N-CHANNEL
DEPLETION-MODE POWER
MOSFET

DESCRIPTION
The UTC UF601 is an N-channel power MOSFET using UTC’s
advanced technology to provide the customers with high switching
speed.

FEATURES
* RDS(ON) < 120Ω @ VGS=0V, ID=3mA
* High Switching Speed

SYMBOL

ORDERING INFORMATION
Ordering Number
Note:

UF601G-AA3-R
UF601G-AE3-R
Pin Assignment: G: Gate D: Drain
Package
SOT-223
SOT-23
Pin Assignment
1
2
3
S
G
D
S
G
D
Packing
Tape Reel
Tape Reel
S: Source
MARKING
SOT-223
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
SOT-23
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QW-R502-699.H
UF601

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
Drain-Source Voltage (Note 2)
Drain-Gate Voltage (Note 2)
Gate-Source Voltage
RATINGS
UNIT
600
V
600
V
±20
V
0.185
A
Continuous
Drain Current
Pulsed
0.740
A
SOT-223
0.8
W
Power Dissipation
PD
SOT-23
0.5
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. TJ=+25°C~+150°C

SYMBOL
VDSS
VDGX
VGSS
ID
IDM
THERMAL DATA
PARAMETER
Junction to Ambient

SYMBOL
SOT-223
SOT-23
θJA
RATINGS
150
250
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=-5V
Drain-Source Leakage Current
ID(OFF)
VDS=600V, VGS=-5V
Forward
VGS=+20V, VDS=0V
Gate-Source Leakage Current
IGSS
Reverse
VGS=-20V, VDS=0V
ON CHARACTERISTICS
Gate to Source Cut Off Voltage
VGS(OFF)
VDS=3V, ID=8µA
Drain-Source Leakage Current
IDSS
VDS=25V, VGS=0V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=0V, ID=3mA
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V,
Output Capacitance
COSS
f=1.0MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=-5~5V, VDS=30V,
Gate to Source Charge
QGS
ID=5mA
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VGS=-5~5V, VDD=30V,
ID=5mA, RG=20Ω
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
ISD=3.0mA, VGS=-10V
Note: 1. Repetitive rating, pulse width limited by maximum junction temperature
2. Pulse width≤380μs; duty cycle≤2%
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
600
0.1
+100
-100
-2.7
7.0
-1.5
60
120
V
μA
nA
nA
V
mA
Ω
53
3000
2.6
pF
pF
pF
7.6
4
0.4
42
20
80
300
nC
nC
nC
ns
ns
ns
ns
1.4
V
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QW-R502-699.H
UF601

Power MOSFET
TYPICAL CHARACTERISTICS
TR
TF
VDD=30V ,ID=5mA, RG=20Ω
VDD=30V ,ID=5mA, RG=20Ω
10V
/5V
0
10V
/5V
0
-10V
/-5V
-10V
/-5V
0
200
Time (40ns/div)
400
0
1000
Time (200ns/div)
2000
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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