DMS05N60 N-Channel Depletion-Mode MOSFET Features • Depletion Mode (Normally On) • Advanced Planar Technology • Rugged Poly-silicon Gate Cell Structure • Fast Switching Speed • ESD Sensitive. • RoHS compliant package Applications • Normally-on Switches • SMPS start-up Circuit • Linear Amplifier • Converters • Constant Current Source • Telecom Packing & Order Information SOT-23 3,000/Reel Graphic symbol Publication Order Number: [DMS05N60] © Bruckewell Technology Corporation Rev. A -2014 DMS05N60 N-Channel Depletion-Mode MOSFET MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings TA=25°C unless otherwise specified Symbol Parameter [1] DMS05N60 Unit 600 V 600 V VDSX Drain-to-Source Voltage VDGX Drain-to-Gate Voltage ID Continuous Drain Current 0.020 A IDM Pulsed Drain Current 0.081 A PD Power Dissipation 0.50 W VGS Gate-to-Source Voltage ±20 V TL TJ, TSTG [1] Soldering Temperature 300 Distance of 1.6mm from case for 10 seconds °C -55 to +150 Operating and Storage Temperature Range Caution: Stresses greater than those listed in the “Absolute Maximum Ratings “may cause permanent damage to the device. Thermal Characteristics Symbol Parameter RθJA Thermal Resistance, Junction to Ambient Air DMS05N60 Unit 250 K/W OFF Characteristics TA=25°C unless otherwise specified Symbol Parameter Conditions Min BVDSX 600 Drain-to-Source Breakdown Voltage VGS=-5V,ID=250μA Tpy Drain-to-Source Teakage Current 0.1 μA 10 μA VGS=+20V,VDS=0V 100 nA VGS=-20V,VDS=0V -100 nA Max. Units VDS=600V,VGS=-5V TJ=125°C IGSS Gate-to-Source Leakage Current ON Characteristics TA=25°C unless otherwise specified Symbol Parameter Conditions Min IDSS Saturated Drain-to-Source Current VGS=0V,VDS=25V RDS(ON) Static Drain-to-Source On-Resistance VGS=0V,ID=3Ma[4] VGS(OFF) Gate-to-Source Cut-off Voltage VDS=3V,ID=8μA gfs Forward Transconductance VDS=10V,ID=5mA Publication Order Number: [DMS05N60] Units V VDS=600V,VGS=-5V ID(OFF) Max. Tpy 12 mA 500 -2.7 15.4 700 Ω -1.5 V mS © Bruckewell Technology Corporation Rev. A -2014 DMS05N60 N-Channel Depletion-Mode MOSFET Dynamic Characteristics Essentially independent of operating temperature Symbol Parameter Conditions Min Tpy CISS Input Capacitance VGS=-5V 12.3 COSS Oput Capacitance VDS=25V 2.6 CRSS Reverse Transfer Capacitance f=1.0MHz 1.8 QG Total Gate Charge QGS Gate-to-Source Charge QGD Gate-to-Drain (Miller) Charge VDS=300V,ID=5mA Rise Time td(OFF) Turn-off Delay Time tfall Fall Time 0.12 Diode Forward Voltage nC Max. Units 4 VGS=-5V~5V VDD=300V,ID=5Ma RG=20Ohm 9 ns 14 84 Resistive Switching Characteristics Essentially independent of operating temperature Symbol Parameter Conditions Min Tpy VSD pf 0.56 Turn-on Delay Time Trise Units 1.55 VGS=-5V~5V Resistive Switching Characteristics Essentially independent of operating temperature Symbol Parameter Conditions Min Tpy Td(ON) Max. ISD=3.0mA,VGS=-10V Max. Units 1.2 V NOTE: [1] TJ=+25°C to +150°C [2] Repetitive rating, pulse width limited by maximum junction temperature. [3] Pulse width ≦ 380 μs ; duty cycle ≦ 2% Publication Order Number: [DMS05N60] © Bruckewell Technology Corporation Rev. A -2014 DMS05N60 N-Channel Depletion-Mode MOSFET ■Characteristic Curves FIG.1 – MAXIMUM POWER DISSIPATION VS CASE FIG.2 – MAXIMUM CONTINUOUS DRAIN CURRENT VS TEMPERATURE CASE TEMPERATURE FIG.3 –TYPICAL OUTPUT CHARACTERISTICS FIG.4 – TYPICAL TRANSFER CHARACTERISTICS FIG.5 –TYPICAL CAPACITANCE VS. FIG.6 –TYPICAL GATE CHARGE VS GATE-TO-SOURCE DRAIN-TO-SOURCE VOLTAGE VOLTAGE Publication Order Number: [DMS05N60] © Bruckewell Technology Corporation Rev. A -2014 DMS05N60 N-Channel Depletion-Mode MOSFET Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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