TO -22 0 AB BUK7515-100A N-channel TrenchMOS standard level FET 5 April 2014 Product data sheet 1. General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits • • AEC Q101 compliant Low conduction losses due to low on-state resistance 3. Applications • Automotive and general purpose power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 100 V ID drain current Tmb = 25 °C - - 75 A Ptot total power dissipation - - 300 W VGS = 10 V; ID = 25 A; Tj = 25 °C - 12 15 mΩ ID = 35 A; Vsup ≤ 25 V; RGS = 50 Ω; - - 120 mJ Static characteristics RDSon drain-source on-state resistance Avalanche ruggedness EDS(AL)S non-repetitive drainsource avalanche energy VGS = 10 V; Tj(init) = 25 °C; unclamped Scan or click this QR code to view the latest information for this product BUK7515-100A NXP Semiconductors N-channel TrenchMOS standard level FET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 G gate 2 D drain 3 S source mb D mounting base; connected to drain Graphic symbol D mb G mbb076 S 1 2 3 TO-220AB (SOT78A) 6. Ordering information Table 3. Ordering information Type number BUK7515-100A BUK7515-100A Product data sheet Package Name Description Version TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78A All information provided in this document is subject to legal disclaimers. 5 April 2014 © NXP Semiconductors N.V. 2014. All rights reserved 2 / 11 BUK7515-100A NXP Semiconductors N-channel TrenchMOS standard level FET 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 100 V VDGR drain-gate voltage RGS = 20 kΩ - 100 V VGS gate-source voltage -20 20 V Ptot total power dissipation - 300 W ID drain current - 75 A Tmb = 100 °C - 60.8 A Tmb = 25 °C; pulsed - 240 A Tmb = 25 °C IDM peak drain current Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C Source-drain diode IS source current Tmb = 25 °C - 75 A ISM peak source current pulsed; Tmb = 25 °C - 240 A ID = 35 A; Vsup ≤ 25 V; RGS = 50 Ω; - 120 mJ Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy VGS = 10 V; Tj(init) = 25 °C; unclamped 003aaf382 100 Pder (%) 80 60 60 40 40 20 20 0 Fig. 1. 0 50 100 150 Tmb (°C) BUK7515-100A Product data sheet 0 200 Normalized total power dissipation as a function of mounting base temperature 003aaf383 100 ID (%) 80 0 50 100 150 Tmb (°C) 200 VGS ≥ 10 V Fig. 2. Normalized continuous drain current as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. 5 April 2014 © NXP Semiconductors N.V. 2014. All rights reserved 3 / 11 BUK7515-100A NXP Semiconductors N-channel TrenchMOS standard level FET 003aaf384 103 IDM (A) RDSon = VDS / ID tp = 10 µs 102 60 100 µs 1 ms 10 Fig. 3. 40 10 ms 1 20 100 ms D.C. 1 003aaf397 100 WDSS (%) 80 102 10 0 103 VDS (V) 20 60 100 140 Tmb (°C) 180 Tmb = 25 °C ID = 75 A Safe operating area; continuous and peak drain Fig. 4. currents as a function of drain-source voltage Normalised drain-source non-repetitive avalanche energy as a function of mountingbase temperature 8. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Rth(j-mb) thermal resistance from junction to mounting base Rth(j-a) thermal resistance from junction to ambient in free air Min Typ Max Unit - - 0.5 K/W - 60 - K/W 003aaf385 1 Zth(j-mb) (K/W) δ = 0.5 10- 1 0.2 P 0.1 δ= tp T 0.05 0.02 10- 2 10- 5 Fig. 5. single pulse 10- 4 10- 3 tp 10- 2 10- 1 t T 1 10 tp (s) Transient thermal impedance from junction to mounting base as a function of pulse duration BUK7515-100A Product data sheet All information provided in this document is subject to legal disclaimers. 5 April 2014 © NXP Semiconductors N.V. 2014. All rights reserved 4 / 11 BUK7515-100A NXP Semiconductors N-channel TrenchMOS standard level FET 9. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit drain-source breakdown voltage ID = 0.25 mA; VGS = 0 V; Tj = 25 °C 100 - - V ID = 0.25 mA; VGS = 0 V; Tj = -55 °C 89 - - V gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 25 °C 2 3 4 V ID = 1 mA; VDS = VGS; Tj = 175 °C 1 - - V ID = 1 mA; VDS = VGS; Tj = -55 °C - - 4.4 V VDS = 100 V; VGS = 0 V; Tj = 175 °C - - 500 µA VDS = 100 V; VGS = 0 V; Tj = 25 °C - 0.05 10 µA VGS = 20 V; VDS = 0 V; Tj = 25 °C - 2 100 nA VGS = -20 V; VDS = 0 V; Tj = 25 °C - 2 100 nA VGS = 10 V; ID = 25 A; Tj = 175 °C - - 40.5 mΩ VGS = 10 V; ID = 25 A; Tj = 25 °C - 12 15 mΩ Static characteristics V(BR)DSS VGS(th) IDSS IGSS RDSon drain leakage current gate leakage current drain-source on-state resistance Dynamic characteristics Ciss input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz; - 4500 6000 pF Coss output capacitance Tj = 25 °C - 550 660 pF Crss reverse transfer capacitance - 305 400 pF td(on) turn-on delay time VDS = 30 V; RL = 1.2 Ω; VGS = 10 V; - 35 55 ns tr rise time RG(ext) = 10 Ω; Tj = 25 °C - 85 125 ns td(off) turn-off delay time - 150 225 ns tf fall time - 70 100 ns LD internal drain inductance from contact screw on tab to centre of die; Tj = 25 °C - 3.5 - nH from drain lead 6 mm from package to centre of die; Tj = 25 °C - 4.5 - nH from source lead 6 mm from package to source bond pad ; Tj = 25 °C - 7.5 - nH IS = 25 A; VGS = 0 V; Tj = 25 °C - 0.85 1.2 V IS = 75 A; VGS = 0 V; Tj = 25 °C - 1.1 - V LS internal source inductance Source-drain diode VSD source-drain voltage trr reverse recovery time IS = 75 A; dIS/dt = -100 A/µs; - 80 - ns Qr recovered charge VGS = -10 V; VDS = 30 V; Tj = 25 °C - 0.35 - µC BUK7515-100A Product data sheet All information provided in this document is subject to legal disclaimers. 5 April 2014 © NXP Semiconductors N.V. 2014. All rights reserved 5 / 11 BUK7515-100A NXP Semiconductors N-channel TrenchMOS standard level FET 003aaf386 300 10 ID (A) 9 RDS(on) (m ) VGS (V) = 20 17 7.5 200 100 6 4.5 0 2 4 6 8 6 6.5 7 8 15 13 5.5 Fig. 6. 5.5 7 6.5 0 003aaf387 19 8 5 VDS (V) 11 10 VGS (V) = 10 0 20 40 80 ID (A) 100 Tj = 25 °C Tj = 25 °C Fig. 7. Output characteristics: drain current as a function of drain-source voltage; typical values Drain-source on-state resistance as a function of drain current; typical values 003aaf388 16 003aaf389 100 ID (A) 80 RDS(on) (mΩ) 14 60 40 12 Tj = 175 °C 20 10 5 10 15 VGS (V) 0 20 Tj = 25 °C; ID = 25 A Fig. 8. 60 0 2 Tj = 25 °C 4 6 VGS (V) 8 VDS > ID x RDSon Drain-source on-state resistance as a function of gate-sorce voltage; typical values Fig. 9. 003aaf390 80 Transfer characteristics: drain current as a function of gate-source voltage; typical values 003aaf391 3.0 gfs (S) a 2.5 60 2.0 40 1.5 20 0 1.0 0 20 40 60 80 ID (A) 0.5 - 100 100 VDS > ID x RDSon Product data sheet 100 Tmb (°C) 200 ID = 25 A; VGS = 10 V Fig. 10. Forward transconductance as a function of drain current; typical values BUK7515-100A 0 Fig. 11. Normalized drain-source on-state resistance factor as a function of junction temperature All information provided in this document is subject to legal disclaimers. 5 April 2014 © NXP Semiconductors N.V. 2014. All rights reserved 6 / 11 BUK7515-100A NXP Semiconductors N-channel TrenchMOS standard level FET 003aaf392 5 VGS(th) (V) 4 maximum 3 2 typical 10- 3 minimum 10- 4 0 - 100 0 100 Tj (°C) 10- 6 200 ID = 1 mA; VDS = VGS typical 98 % 0 1 2 3 4 VGS (V) 5 Tj = 25 °C; VDS = VGS Fig. 12. Gate-source threshold voltage as a function of junction temperature Fig. 13. Sub-threshold drain current as a function of gate-source voltage 003aaf394 12 003aaf395 12 VGS (V) Ciss 8 8 VDS = 14 V Coss 4 2% 10- 5 1 C (nF) 003aaf393 10- 1 ID (A) 10- 2 Crss 0 10- 2 VDS = 80 V 4 10- 1 1 10 VDS (V) 0 102 0 40 80 QG (nC) 120 Tj = 25 °C; ID = 25 A VGS = 0 V; f = 1 MHz Fig. 14. Input, output and reverse transfer capacitances Fig. 15. Gate-source voltage as a function of gate charge; typical values as a function of drain-source voltage; typical values 003aaf396 100 ID (A) 80 60 40 Tj = 175 °C 20 0 0 0.4 Tj = 25 °C 0.8 VSDS (V) 1.2 VGS = 0 V Fig. 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values BUK7515-100A Product data sheet All information provided in this document is subject to legal disclaimers. 5 April 2014 © NXP Semiconductors N.V. 2014. All rights reserved 7 / 11 BUK7515-100A NXP Semiconductors N-channel TrenchMOS standard level FET 10. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB E SOT78A A A1 p q mounting base D1 D L2 L1(1) Q b1 L 1 2 3 b e c e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 c D D1 E e L L1(1) L2 max. p q Q mm 4.5 4.1 1.39 1.27 0.9 0.6 1.3 1.0 0.7 0.4 15.8 15.2 6.4 5.9 10.3 9.7 2.54 15.0 13.5 3.30 2.79 3.0 3.8 3.6 3.0 2.7 2.6 2.2 Note 1. Terminals in this zone are not tinned. OUTLINE VERSION SOT78A REFERENCES IEC JEDEC JEITA 3-lead TO-220AB SC-46 EUROPEAN PROJECTION ISSUE DATE 03-01-22 05-03-14 Fig. 17. Package outline TO-220AB (SOT78A) BUK7515-100A Product data sheet All information provided in this document is subject to legal disclaimers. 5 April 2014 © NXP Semiconductors N.V. 2014. All rights reserved 8 / 11 BUK7515-100A NXP Semiconductors N-channel TrenchMOS standard level FET In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 11. 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BUK7515-100A Product data sheet Suitability for use in automotive applications — This NXP Semiconductors product has been qualified for use in automotive applications. Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. All information provided in this document is subject to legal disclaimers. 5 April 2014 © NXP Semiconductors N.V. 2014. All rights reserved 9 / 11 BUK7515-100A NXP Semiconductors N-channel TrenchMOS standard level FET No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, ICODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP Semiconductors N.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. BUK7515-100A Product data sheet All information provided in this document is subject to legal disclaimers. 5 April 2014 © NXP Semiconductors N.V. 2014. All rights reserved 10 / 11 BUK7515-100A NXP Semiconductors N-channel TrenchMOS standard level FET 12. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Limiting values .......................................................3 8 Thermal characteristics .........................................4 9 Characteristics ....................................................... 5 10 Package outline ..................................................... 8 11 11.1 11.2 11.3 11.4 Legal information ...................................................9 Data sheet status ................................................. 9 Definitions .............................................................9 Disclaimers ...........................................................9 Trademarks ........................................................ 10 © NXP Semiconductors N.V. 2014. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 5 April 2014 BUK7515-100A Product data sheet All information provided in this document is subject to legal disclaimers. 5 April 2014 © NXP Semiconductors N.V. 2014. All rights reserved 11 / 11