Datasheet

UNISONIC TECHNOLOGIES CO., LTD
24N50
Power MOSFET
24A, 500V N-CHANNEL
POWER MOSFET
„
DESCRIPTION
The UTC 24N50 is an N-channel mode power MOSFET using
UTC’s advanced technology to provide customers with planar stripe
and DMOS technology. This technology allows a minimum on-state
resistance and superior switching performance. It also can withstand
high energy pulse in the avalanche and commutation mode.
The UTC 24N50 is generally applied in high efficiency switch
mode power supplies, active power factor correction and electronic
lamp ballasts based on half bridge topology.
„
FEATURES
* RDS(ON)=0.24Ω @ VGS=10V
* High Switching Speed
* 100% Avalanche Tested
„
SYMBOL
2.Drain
1.Gate
3.Source
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
24N50L-T47-T
24N50G-T47-T
22N60L-T3P-T
22N60G-T3P-T
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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Copyright © 2012 Unisonic Technologies Co., Ltd
Package
TO-247
TO-3P
1
G
G
Pin Assignment
2
3
D
S
D
S
Packing
Tube
Tube
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24N50
„
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
500
V
Gate-Source Voltage
VGSS
±30
V
ID
24(Note 2)
A
Continuous (TC=25°C)
Drain Current
Pulsed (Note 3)
IDM
96 (Note 2)
A
Avalanche Current (Note 3)
IAR
24
A
1100
mJ
Single Pulsed (Note 4)
EAS
Avalanche Energy
Repetitive (Note 5)
EAR
29
mJ
Peak Diode Recovery dv/dt (Note 5)
dv/dt
15
V/ns
290
TO-247
W
Power Dissipation
TO-3P
220
PD
Derate above 25°C
2.33
W/°C
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Drain current limited by maximum junction temperature
3. Repetitive Rating: Pulse width limited by maximum junction temperature
4. L =3.4mH, IAS = 24A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
5. ISD ≤ 24A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
„
THERMAL DATA
PARAMETER
TO-247
Junction to Ambient
TO-3P
TO-247
Junction to Case
TO-3P
„
SYMBOL
θJA
θJC
RATINGS
40
30
0.43
0.34
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Forward
Gate- Source Leakage Current
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SYMBOL
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
CISS
COSS
CRSS
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
TEST CONDITIONS
MIN TYP MAX UNIT
ID=250µA, VGS=0V
VDS=500V, VGS=0V
VGS=+30V, VDS=0V
VGS=-30V, VDS=0V
500
VDS=VGS, ID=250µA
VGS=10V, ID=12A
2.0
VGS=0V, VDS=25V, f=1.0MHz
V
50
µA
+100 nA
-100 nA
4.0
0.15 0.24
V
Ω
3500 4500
520 670
55
70
pF
pF
pF
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Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=10V, VDS=400V, ID=24A
Gate to Source Charge
QGS
(Note 1, 2)
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VDD=250V, ID=24A, RG=25Ω
(Note 1, 2)
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS=24A, VGS=0V
Body Diode Reverse Recovery Time
trr
IS=24A, VGS=0V,
dIF/dt=100A/µs (Note 1)
Body Diode Reverse Recovery Charge
QRR
Note: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
90
23
52
80
250
200
155
120
170
500
400
320
24
96
1.4
250
1.1
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
µC
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Gate Charge Test Circuit
Gate Charge Waveforms
VGS
Same Type
as DUT
12V
QG
10V
200nF
50kΩ
VDS
300nF
QGS
QGD
VGS
DUT
3mA
Charge
Unclamped Inductive Switching Waveforms
Unclamped Inductive Switching Test Circuit
2
EAS= 1
2 LIAS
VDS
RG
BVDSS
BVDSS-VDD
BVDSS
ID
L
IAS
10V
ID(t)
DUT
tP
VDD
VDD
VDS(t)
tP
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Time
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24N50
„
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
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www.unisonic.com.tw
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24N50
Power MOSFET
Drain Current, ID (µA)
Drain Current, ID (µA)
TYPICAL CHARACTERISTICS
„
Drain-Source On-State Resistance
Characteristics
14
VGS=10V, ID=12A
12
10
8
6
4
2
0
0
2.5
0.5
1
1.5
2
Drain to Source Voltage, VDS (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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