Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UF840K-MTQ
Power MOSFET
8A, 500V, 0.85Ω, N-CHANNEL
POWER MOSFET

DESCRIPTION
The N-Channel enhancement mode silicon gate power
MOSFET is designed for high voltage, high speed power
switching applications such as switching regulators, switching
converters, solenoid, motor drivers, relay drivers.

FEATURES
* Low RDS(ON)< 0.87Ω @ VGS=10V. ID = 4.4A
* Single Pulse Avalanche Energy Rated
* Fast Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance

SYMBOL

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen-Free
UF840KL-TA3-R
UF840KG-TA3-R
UF840KL-TF3-R
UF840KG-TF3-R
UF840KL-TF1-T
UF840KG-TF1-T
UF840KL-TN3-R
UF840KG-TN3-R
UF840KL-TQ2-T
UF840KG-TQ2-T
UF840KL-TQ2-R
UF840KG-TQ2-R
Note: Pin Assignment: G: Gate D: Drain S: Source
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Copyright © 2016 Unisonic Technologies Co., Ltd
Package
TO-220
TO-220F
TO-220F1
TO-252
TO-263
TO-263
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tape Reel
Tube
Tape Reel
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UF840K-MTQ

Power MOSFET
MARKING
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Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless Otherwise Specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage (TJ =25°C ~125°C)
VDSS
500
V
Drain to Gate Voltage (RGS = 20kΩ, TJ =25°C ~125°C)
VDGR
500
V
Gate to Source Voltage
VGSS
±30
V
Continuous
ID
8.0
A
Drain Current (Note 2)
32
A
Pulsed
IDM
Single Pulse Avalanche Energy (Note 3)
EAS
336
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
3.3
V/ns
TO-220/TO-263
134
W
Power Dissipation
PD
TO-220F/ TO-220F1
44
W
TO-252
107
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L = 10mH, IAS = 8.0A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C.
4. ISD ≤ 8.0A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C.

THERMAL RESISTANCES CHARACTERISTICS
PARAMETER
TO-220/TO-220F
TO-220F1/TO-263
Junction to Ambient
TO-252
TO-220/TO-263
Junction to Case
TO-220F/TO-220F1
TO-252
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SYMBOL
θJA
θJC
RATINGS
UNIT
62.5
°C/W
110
0.93
2.7
1.16
°C/W
°C/W
°C/W
°C/W
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ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
SYMBOL
BVDSS
IDSS
Forward
Reverse
IGSS
TEST CONDITIONS
ID = 250μA, VGS = 0V
VDS=Rated BVDSS, VGS = 0V
VGS=+30V, VDS=0V
VGS=-30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VGS=VDS, ID = 250μA
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V. ID=4.4A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge (Note 1)
QG
VDS=50V, VGS=10V, ID=1.3A,
Gate to Source Charge
QGS
ID=100µA (Note 1, 2)
Gate to Drain Charge
QGD
Turn-on Delay Time (Note 1)
tD(ON)
VDS=30V, VGS=10V, ID=0.5A,
Rise Time
tR
RG=25Ω (Note 1, 2)
Turn-off Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage (Note 1)
VSD
IS=8.0A, VGS=0V
Reverse Recovery Time (Note 1)
trr
IS=8.0A, VGS=0V,
dIF/dt=100A/µs
Reverse Recovery Charge
Qrr
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%.
2. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
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MIN
TYP MAX UNIT
500
2.0
25
+100
-100
V
μA
nA
nA
4.0
0.87
V
Ω
750
130
16
pF
pF
pF
90
6.5
7.5
55
210
43
40
nC
nC
nC
ns
ns
ns
ns
2
8
32
312
3.1
A
A
V
nS
nC
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TEST CIRCUITS AND WAVEFORMS
Unclamped Energy Test Circuit
Unclamped Energy Waveforms
Switching Time Test Circuit
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TEST CIRCUITS AND WAVEFORMS (Cont.)
tON
tOFF
tDLY(ON)
tDLY(OFF)
tR
VDS
tF
90%
90%
10%
0
10%
90%
VGS
0
10%
50%
50%
PULSE WIDTH
Resistive Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveforms
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Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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