UNISONIC TECHNOLOGIES CO., LTD Preliminary UD9930M Power MOSFET DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL) DESCRIPTION The UTC UD9930M is a dual N & P-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on-state resistance, high switching speed, low gate chare. The UTC UD9930M is suitable for DC/DC converters and LCD monitor inverter. FEATURES * N-channel: 30V/5.5A RDS(ON) < 45 mΩ @ VGS=10V, ID=5A RDS(ON) < 70 mΩ @ VGS=4.5V, ID=3A * P-channel: -30V/-4.1A RDS(ON) < 70 mΩ @ VGS=-10V, ID=-4A RDS(ON) < 100 mΩ @ VGS=-4.5V, ID=-2A * High switching speed * Low gate chare SYMBOL P1S P2S P2G P1G P1N1D P2N2D N2G N1G N1S N2S ORDERING INFORMATION Note: Ordering Number Package UD9930MG-S08-R SOP-8 Pin Assignment: G: Gate D: Drain 1 2 3 N1D/ N1S/ N1G P1D N2S S: Source www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd Pin Assignment 4 5 N2G P2G 6 7 N2D/ P1S/ P2D P2S 8 P1G Packing Tape Reel 1 of 5 QW-R211-029.a UD9930M Preliminary Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 5 QW-R211-029.a UD9930M Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) RATINGS UNIT N-CHANNEL P-CHANNEL Drain to Source Voltage VDSS 30 -30 V Gate to Source Voltage VGSS ±25 ±25 TA=25°C 5.5 -4.1 Drain Current (Note 3) Continuous ID A TA=70°C 4.4 -3.3 Drain Current (Note 1) Pulsed IDM 20 -20 Total Power Dissipation @ TA=25°C PD 1.38 W Linear Derating Factor 0.01 W/°C Junction Temperature TJ -55~+150 °C Storage Temperature Range TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. PARAMETER THERMAL CHARACTERISTICS PARAMETER Junction to Ambient (Note 3) SYMBOL SYMBOL θJA RATINGS 90 UNIT °C/W N-CHANNEL ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0 V, ID=250µA Breakdown Voltage Temperature ∆BVDSS/∆TJ Reference to 25°C, ID=1mA Coefficient Drain-Source Leakage Current IDSS VDS=30V, VGS=0 V, TJ=25°C Gate-Source Leakage Forward VDS=24V, VGS=0 V, TJ=70°C IGSS Current VGS=25V, VDS=0V Reverse ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Drain-Source On-state Resistance VGS=10V, ID=5A RDS(ON) (Note 2) VGS=4.5V, ID=3A Forward Transconductance gFS VDS=10V, ID=5A DYNAMIC PARAMETERS Input Capacitance CISS VDS=25V, VGS=0 V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge (Note 2) QG VDS=15V, VGS=4.5V, ID=5A Gate to Source Charge QGS Gate to Drain Charge QGD Turn-ON Delay Time (Note 2) tD(ON) Rise Time tR VDS=15V, ID=1A,VGS=10V, RG=6Ω, RD=15Ω, Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous IS Current Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS=1.2A, VGS=0V (Note 2) Body Diode Reverse Recovery Time tRR IS=1.7A, VGS=0V, I/dt=100A/μs Body Diode Reverse Recovery Charge QRR UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX 30 UNIT V 0.04 V/°C 1 25 +100 µA µA nA 3.0 45 70 5.2 V mΩ mΩ S 145 110 60 pF pF pF 7 2 4 7 10 18 8 nC nC nC ns ns ns ns 1.0 21 16 0.2 A 1.2 A 1.2 V ns nC 3 of 5 QW-R211-029.a UD9930M Preliminary Power MOSFET P-CHANNEL ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise noted) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Leakage Current SYMBOL BVDSS TEST CONDITIONS VGS=0 V, ID=-250µA ∆BVDSS/∆TJ Reference to 25°C, ID=-1mA IDSS VDS=-30V, VGS=0 V, TJ=25°C VDS=-24V, VGS=0 V, TJ=70°C VGS=25V, VDS=0V VGS=-25V, VDS=0V MIN TYP MAX -30 UNIT V -0.04 V/°C -1 -25 +100 -100 µA µA nA nA Gate-Source Leakage Forward IGSS Current Reverse ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=-250µA -1 -3 V Drain-Source On-state Resistance VGS=-10V, ID=-4A 70 mΩ RDS(ON) (Note 2) 100 mΩ VGS=-4.5V, ID=-2A Forward Transconductance gFS VDS=-10V, ID=-5A 4.8 S DYNAMIC PARAMETERS Input Capacitance CISS 200 pF =-25V, V =0 V, f=1.0MHz V Output Capacitance COSS 90 pF DS GS 70 pF Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge (Note 2) QG 7 nC VDS=-15V, VGS=-4.5V, ID=-5A Gate to Source Charge QGS 2 nC Gate to Drain Charge QGD 4 nC Turn-ON Delay Time (Note 2) tD(ON) 11 ns VDS=-15V, ID=-1A,VGS=-10V, Rise Time tR 8 ns RG=6Ω, RD=15Ω, Turn-OFF Delay Time tD(OFF) 20 ns Fall-Time tF 18 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS=-1.2A, VGS=0V -1.2 V (Note 2) Body Diode Reverse Recovery Time tRR 21 ns IS=-1.7A, VGS=0V, Body Diode Reverse Recovery dI/dt=- 100A/μs QRR 16 nC Charge Notes: 1. Pulse width limited by Max. Junction temperature. 2. Pulse width ≤ 300us, duty cycle ≤ 2%. 3. Surface mounted on 1 in 2 copper pad of FR4 board, t ≤10sec; 186℃/W when mounted on Min. copper pad. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 QW-R211-029.a UD9930M Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS N-Channel P-Channel UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R211-029.a