Si4482DY Vishay Siliconix N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 100 ID (A) 0.060 at VGS = 10 V 4.6 0.080 at VGS = 6 V 4.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • Compliant to RoHS Directive 2002/95/EC D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4482DY-T1-E3 (Lead (Pb)-free) Si4482DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25 °C TA = 70 °C ID V 4.6 3.7 IDM 40 IS 2.1 PD Unit 2.5 1.6 A W TJ, Tstg - 55 to 150 Symbol Limit Unit RthJA 50 °C/W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes: a. Surface Mounted on FR4 board, t ≤ 10 s. Document Number: 70749 S09-0767-Rev. C, 04-May-09 www.vishay.com 1 Si4482DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Typ.a Symbol Test Conditions Min. Max. VGS(th) VDS = VGS, ID = 250 µA 2 IGSS VDS = 0 V, VGS = ± 20 V ± 100 VDS = 100 V, VGS = 0 V 1 VDS = 100 V, VGS = 0 V, TJ = 55 °C 20 Unit Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) Drain-Source On-State Resistanceb Forward Transconductanceb Diode Forward Voltage b VDS = 5 V, VGS = 10 V V 20 µA A VGS = 10 V, ID = 4.6 A 0.045 0.060 VGS = 6 V, ID = 4.0 A 0.050 0.080 gfs VDS = 15 V, ID = 4.6 A 20 VSD IS = 2.1 A, VGS = 0 V RDS(on) nA Ω S 1.2 V a Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time 30 VDS = 50 V, VGS = 10 V, ID = 4.6 A td(off) Fall Time tf Source-Drain Reverse Recovery Time trr nC 7 1 td(on) tr 50 7.5 VDD = 50 V, RL = 50 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω IF = 2.1 A, dI/dt = 100 A/µs 4.4 13 25 12 25 60 90 25 40 50 80 Ω ns Notes: a. For design aid only; not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 70749 S09-0767-Rev. C, 04-May-09 Si4482DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 40 40 VGS = 10 V thru 6 V 32 I D - Drain Current (A) I D - Drain Current (A) 30 5V 20 24 16 TC = 125 °C 10 8 1 V, 2 V, 3 V 0 0.0 25 °C 4V - 55 °C 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 1 VDS - Drain-to-Source Voltage (V) 2500 0.08 2000 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 4 5 6 Transfer Characteristics 0.10 VGS = 6 V VGS = 10 V 0.04 3 VGS - Gate-to-Source Voltage (V) Output Characteristics 0.06 2 Ciss 1500 1000 0.02 500 0.00 0 Coss Crss 0 10 20 30 0 40 20 40 80 100 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current Capacitance 2.5 10 VDS = 50 V ID = 4.6 A 2.0 6 4 (Normalized) 8 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 60 VGS = 10 V ID = 4.6 A 1.5 1.0 0.5 2 0 0 6 12 18 Qg - Total Gate Charge (nC) Gate Charge Document Number: 70749 S09-0767-Rev. C, 04-May-09 24 30 0.0 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si4482DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.10 RDS(on) - On-Resistance (Ω) I S - Source Current (A) 40 10 TJ = 150 °C TJ = 25 °C 0.08 ID = 4.6 A 0.06 0.04 0.02 0.00 1 0 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 0 1.2 10 On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 50 0.6 0.3 40 0.0 ID = 250 µA Power (W) VGS(th) Variance (V) 2 4 6 8 VGS - Gate-to-Source Voltage (V) - 0.3 30 20 - 0.6 10 - 0.9 - 1.2 - 50 - 25 0 25 50 75 100 125 150 0 0.01 0.10 1.00 10.00 Time (s) TJ - Temperature (°C) Single Pulse Power Threshold Voltage 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 2. Per Unit Base = R thJA = 50 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 t1 t2 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 4. Surface Mounted 1 10 30 Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70749. www.vishay.com 4 Document Number: 70749 S09-0767-Rev. C, 04-May-09 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000