Si9407AEY Vishay Siliconix P-Channel 60-V (D-S), 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 ID (A) 0.120 at VGS = - 10 V ± 3.5 0.15 at VGS = - 4.5 V ± 3.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC SO-8 S S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D Ordering Information: Si9407AEY-T1-E3 (Lead (Pb)-free) Si9407AEY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS - 60 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25 °C TA = 70 °C ID V ± 3.5 ± 3.0 IDM ± 30 IS - 2.5 PD Unit 3.0 2.1 A W TJ, Tstg - 55 to 175 Symbol Limit Unit RthJA 50 °C/W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes: a. Surface Mounted on FR4 board, t ≤ 10 s. Document Number: 70742 S09-1341-Rev. E, 13-Jul-09 www.vishay.com 1 Si9407AEY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VGS(th) VDS = VGS, ID = - 250 µA -1 IGSS Typ.a Max. Unit -3 V VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = - 60 V, VGS = 0 V -1 VDS = - 60 V, VGS = 0 V, TJ = 55 °C - 10 Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) Drain-Source On-State Resistanceb Forward Transconductanceb Diode Forward Voltage b VDS ≤ - 5 V, VGS = - 10 V RDS(on) - 20 A VGS = - 10 V, ID = 3.5 A 0.120 VGS = - 4.5 V, ID = 3.1 A 0.150 gfs VDS = - 15 V, ID = - 3.5 A VSD IS = - 2.5 A, VGS = 0 V µA 8 Ω S - 1.2 V a Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time tr td(off) Fall Time tf Source-Drain Reverse Recovery Time trr 18 VDS = - 30 V, VGS = - 10 V, ID = - 3.5 A 30 nC 5 2 VDD = - 30 V, RL = 30 Ω ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω IF = - 2.5 A, dI/dt = 100 A/µs 8 15 10 20 35 50 12 25 70 100 ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 70742 S09-1341-Rev. E, 13-Jul-09 Si9407AEY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 30 VGS = 10 V, 9 V, 8 V, 7 V 5V 25 I D - Drain Current (A) 25 I D - Drain Current (A) TC = - 55 °C 6V 20 15 4V 10 25 °C 20 150 °C 15 10 5 5 3V 2V 0 0 0 1 2 3 4 0 5 1 3 Output Characteristics 5 6 50 60 Transfer Characteristics 1500 0.20 1200 Ciss C - Capacitance (pF) 0.15 VGS = 4.5 V 0.10 VGS = 10 V 900 600 0.05 300 Coss Crss 0 0.00 0 5 10 15 20 25 0 30 10 ID - Drain Current (A) 20 30 40 VDS - Drain-to-Source Voltage (V) Capacitance On-Resistance vs. Drain Current 10 2.0 VGS = 10 V ID = 3.5 A VDS = 30 V ID = 3.5 A 6 4 1.5 (Normalized) 8 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 4 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) R DS(on) - On-Resistance (Ω) 2 1.0 0.5 2 0 0 4 8 12 Qg - Total Gate Charge (nC) Gate Charge Document Number: 70742 S09-1341-Rev. E, 13-Jul-09 16 20 0.0 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si9407AEY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.20 R DS(on) - On-Resistance (Ω) I S - Source Current (A) 30 TJ = 175 °C 10 TJ = 25 °C 0 0.0 0.15 ID = 3.5 A 0.10 0.05 0.00 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 0 1.4 Source-Drain Diode Forward Voltage 10 On-Resistance vs. Gate-to-Source Voltage 0.8 50 0.6 40 0.4 Power (W) VGS(th) Variance (V) 2 4 6 8 VGS - Gate-to-Source Voltage (V) ID = 250 µA 0.2 30 20 0.0 10 - 0.2 - 0.4 - 50 - 25 0 25 50 75 100 TJ - Temperature (°C) 125 150 175 0 0.01 0.1 1 10 Time (s) Threshold Voltage Single Pulse Power 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 50 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 4. Surface Mounted 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 30 Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70742. www.vishay.com 4 Document Number: 70742 S09-1341-Rev. E, 13-Jul-09 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000