IRF IRGP4650DPBF

IRGP4650DPbF
IRGP4650D-EPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
VCES = 600V
C
C
C
IC = 50A, TC = 100°C
tSC 5μs, TJ(max) = 175°C
G
VCE(on) typ. = 1.60V @ IC = 35A
E
n-channel
Applications
• Industrial Motor Drive
• Inverters
• UPS
• Welding
G
Gate
GC
E
E
GC
TO-247AD
IRGP4650D-EP
TO-247AC
IRGP4650DPbF
C
Collector
Features
E
Emitter
Benefits
High efficiency in a wide range of applications and switching
frequencies
Improved reliability due to rugged hard switching performance
and higher power capability
Excellent current sharing in parallel operation
Enables short circuit protection scheme
Environmentally friendly
Low VCE(ON) and Switching Losses
Square RBSOA and Maximum Junction Temperature 175°C
Positive VCE (ON) Temperature Coefficient
5μs short circuit SOA
Lead-Free, RoHS compliant
Base part number
Package Type
IRGP4650DPbF
IRGP4650D-EPbF
TO-247AC
TO-247AD
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable part number
IRGP4650DPbF
IRGP4650D-EPbF
Absolute Maximum Ratings
Parameter
Max.
Units
V
V CES
Collector-to-Emitter Voltage
600
IC @ TC = 25°C
Continuous Collector Current
76
IC @ TC = 100°C
ICM
Continuous Collector Current
50
ILM
Clamped Inductive Load Current, VGE = 20V
IF @ TC = 25°C
Diode Continous Forward Current
76
IF @ TC = 100°C
Diode Continous Forward Current
50
IFM
Diode Maximum Forward Current
140
V GE
Continuous Gate-to-Emitter Voltage
±20
Transient Gate-to-Emitter Voltage
±30
PD @ TC = 25°C
Maximum Power Dissipation
268
PD @ TC = 100°C
Maximum Power Dissipation
134
TJ
Operating Junction and
TST G
Storage Temperature Range
Pulse Collector Current, VGE = 15V
d
105
c
A
140
V
W
-55 to +175
°C
Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
Min.
Typ.
Max.
Units
–––
–––
0.56
°C/W
–––
–––
1.0
RJC (Diode)
Junction-to-Case (IGBT) f
Junction-to-Case (Diode) f
RCS
Case-to-Sink (flat, greased surface)
–––
0.24
–––
RJA
Junction-to-Ambient (typical socket mount)
–––
–––
40
RJC (IGBT)
1
www.irf.com © 2012 International Rectifier
January 8, 2013
IRGP4650DPbF/IRGP4650D-EPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)CES
Collector-to-Emitter BreakdownVoltage
V(BR)CE S/T J
T emperature Coeff. of B reakdown Voltage
VCE(on)
Collector-to-Emitter Saturation Voltage
Min.
Typ.
Max.
Units
Conditions
600
—
—
V
VGE = 0V, IC = 100μA
—
1.3
—
—
1.60
1.90
—
1.90
—
—
2.00
—
4.0
—
6.5
e
mV/°C VGE = 0V, IC = 1mA (25°C-175°C)
d
= 150°C d
= 175°C d
IC = 35A, VGE = 15V, TJ = 25°C
V
IC = 35A, VGE = 15V, TJ
V
VCE = VGE, IC = 1.0mA
IC = 35A, VGE = 15V, TJ
VGE(th)
Gate Threshold Voltage
VGE (th)/T J
Threshold Voltage temp. coefficient
—
-18
—
gfe
Forward Transconductance
—
25
—
S
VCE = 50V, IC = 35A, PW = 60μs
ICES
Collector-to-Emitter Leakage Current
—
1.0
70
μA
VGE = 0V, VCE = 600V
—
770
—
VFM
Diode Forward Voltage Drop
—
2.0
3.0
V
IF = 35A
—
1.4
—
—
—
±100
IGES
Gate-to-Emitter Leakage Current
mV/°C VCE = VGE, IC = 1.0mA (25°C - 175°C)
VGE = 0V, VCE = 600V, TJ = 175°C
IF = 35A, TJ = 175°C
nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Min.
Typ.
Max.
Qg
Total Gate Charge (turn-on)
Parameter
—
69
104
Qge
Gate-to-Emitter Charge (turn-on)
—
18
27
Qgc
Gate-to-Collector Charge (turn-on)
—
29
44
VCC = 400V
Eon
Turn-On Switching Loss
—
390
508
IC = 35A, VCC = 400V, VGE = 15V
Eoff
Turn-Off Switching Loss
—
632
753
Etotal
Total Switching Loss
—
1022
1261
td(on)
Turn-On delay time
—
46
56
tr
Rise time
—
33
42
td(off)
Turn-Off delay time
—
105
117
tf
Fall time
—
44
54
Eon
Turn-On Switching Loss
—
1013
—
Eoff
Turn-Off Switching Loss
—
929
—
Etotal
Total Switching Loss
—
1942
—
td(on)
Turn-On delay time
—
43
—
tr
Rise time
—
35
—
td(off)
Turn-Off delay time
—
127
—
tf
Fall time
—
61
—
Cies
Input Capacitance
—
2113
—
Coes
Output Capacitance
—
197
—
Cres
Reverse Transfer Capacitance
—
65
—
Units
Conditions
IC = 35A
nC
μJ
VGE = 15V
RG = 10, L = 200μH, LS = 150nH, TJ = 25°C
E nergy los s es include tail & diode revers e recovery
IC = 35A, VCC = 400V, VGE = 15V
ns
RG = 10, L = 200μH, LS = 150nH, TJ = 25°C
μJ
RG=10, L=200μH, LS=150nH, TJ = 175°C
IC = 35A, VCC = 400V, VGE=15V
E nergy los s es include tail & diode revers e recovery
IC = 35A, VCC = 400V, VGE = 15V
ns
RG = 10, L = 200μH, LS = 150nH
TJ = 175°C
pF
VGE = 0V
VCC = 30V
f = 1.0Mhz
TJ = 175°C, IC = 140A
RBSOA
Reverse Bias Safe Operating Area
VCC = 480V, Vp ”600V
FULL SQUARE
Rg = 10, VGE = +20V to 0V
SCSOA
Short Circuit Safe Operating Area
5
—
—
μs
VCC = 400V, Vp ”600V
Erec
Reverse Recovery Energy of the Diode
—
304
—
μJ
TJ = 175°C
trr
Diode Reverse Recovery Time
—
120
—
ns
VCC = 400V, IF = 35A
Irr
Peak Reverse Recovery Current
—
25
—
A
VGE = 15V, Rg = 10, L =210μH, Ls = 150nH
Rg = 10, VGE = +15V to 0V
Notes:
 VCC = 80% (VCES), VGE = 20V, L = 19μH, RG = 10.
‚ Pulse width limited by max. junction temperature.
ƒ Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
„ R is measured at TJ of approximately 90°C.
2
www.irf.com © 2012 International Rectifier
January 8, 2013
IRGP4650DPbF/IRGP4650D-EPbF
80
300
70
250
60
200
Ptot (W)
IC (A)
50
40
30
150
100
20
50
10
0
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
T C (°C)
T C (°C)
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
Fig. 2 - Power Dissipation vs. Case
Temperature
1000
1000
100
10
100
10μsec
IC (A)
IC (A)
100μsec
1msec
DC
10
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
1
10
100
1000
10
100
VCE (V)
VCE (V)
Fig. 3 - Forward SOA
TC = 25°C, TJ 175°C; VGE =15V
Fig. 4 - Reverse Bias SOA
TJ = 175°C; VGE =20V
140
140
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
120
80
VGE = 18V
VGE = 15V
VGE = 12V
120
100
ICE (A)
ICE (A)
100
60
VGE = 10V
VGE = 8.0V
80
60
40
40
20
20
0
0
0
2
4
6
8
10
VCE (V)
Fig. 5 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 60μs
3
1000
www.irf.com © 2012 International Rectifier
0
2
4
6
8
10
VCE (V)
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 60μs
January 8, 2013
IRGP4650DPbF/IRGP4650D-EPbF
140
140
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
120
80
100
IF (A)
ICE (A)
100
120
60
60
40
40
20
20
0
-40°C
25°C
175°C
80
0
0
2
4
6
8
10
0.0
1.0
2.0
Fig. 8 - Typ. Diode Forward Characteristics
tp = 80μs
20
20
18
18
16
16
14
14
ICE = 18A
VCE (V)
VCE (V)
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 175°C; tp = 60μs
ICE = 35A
10
ICE = 70A
8
12
ICE = 18A
ICE = 35A
10
ICE = 70A
8
6
6
4
4
2
2
0
0
5
10
15
20
5
10
VGE (V)
20
Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
20
140
IC, Collector-to-Emitter Current (A)
18
16
14
VCE (V)
15
VGE (V)
Fig. 9 - Typical VCE vs. VGE
TJ = -40°C
12
ICE = 18A
ICE = 35A
ICE = 70A
10
8
6
4
2
120
TJ = 25°C
100
80
T J = 175°C
60
40
20
0
0
5
10
15
20
VGE (V)
Fig. 11 - Typical VCE vs. VGE
TJ = 175°C
4
4.0
VF (V)
VCE (V)
12
3.0
www.irf.com © 2012 International Rectifier
4
5
6
7
8
9
10 11 12 13 14
VGE, Gate-to-Emitter Voltage (V)
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V; tp = 60μs
January 8, 2013
IRGP4650DPbF/IRGP4650D-EPbF
4000
1000
3500
2500
Swiching Time (ns)
Energy (μJ)
3000
EON
2000
1500
EOFF
tdOFF
100
tF
1000
tdON
500
tR
0
10
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
IC (A)
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 200μH; VCE = 400V, RG = 10; VGE = 15V
3000
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L = 200μH; VCE = 400V, RG = 10; VGE = 15V
1000
2500
Swiching Time (ns)
Energy (μJ)
EON
2000
EOFF
1500
tdOFF
100
tF
tdON
1000
tR
500
10
0
25
50
75
100
0
10
30
40
50
RG ()
Rg ()
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 210μH; VCE = 400V, ICE = 35A; VGE = 15V
Fig. 16 - Typ. Switching Time vs. RG
TJ = 175°C; L = 210μH; VCE = 400V, ICE = 35A; VGE = 15V
35
26
RG = 10
30
24
22
RG = 22
25
IRR (A)
IRR (A)
20
RG = 47
20
20
18
15
16
RG = 100
10
14
10
20
30
40
50
60
70
IF (A)
Fig. 17 - Typ. Diode IRR vs. IF
TJ = 175°C
5
www.irf.com © 2012 International Rectifier
0
20
40
60
80
100
RG (
Fig. 18 - Typ. Diode IRR vs. RG
TJ = 175°C
January 8, 2013
IRGP4650DPbF/IRGP4650D-EPbF
26
2500
24
2250
22
2000
70A
QRR (nC)
IRR (A)
10
20
35A
22
1750
47
18
1500
16
1250
18A
100
1000
14
200
300
400
500
600
100 200 300 400 500 600 700 800 900
700
diF /dt (A/μs)
diF /dt (A/μs)
Fig. 20 - Typ. Diode QRR vs. diF/dt
VCC = 400V; VGE = 15V; TJ = 175°C
Fig. 19 - Typ. Diode IRR vs. diF/dt
VCC = 400V; VGE = 15V; IF = 35A; TJ = 175°C
300
20
400
RG = 10
Isc
350
15
Time (μs)
Energy (μJ)
250
RG = 47
200
10
150
5
75
RG = 100
150
0
0
100
10
20
30
40
50
60
8
70
10
12
16
18
Fig. 22 - VGE vs. Short Circuit Time
VCC = 400V; TC = 25°C
Fig. 21 - Typ. Diode ERR vs. IF
TJ = 175°C
16
VGE, Gate-to-Emitter Voltage (V)
10000
Cies
Capacitance (pF)
14
VGE (V)
IF (A)
1000
Coes
100
Cres
10
VCES = 400V
VCES = 300V
14
12
10
8
6
4
2
0
0
100
200
300
400
500
VCE (V)
Fig. 23 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
6
Current (A)
RG = 22
300
225
Tsc
www.irf.com © 2012 International Rectifier
0
10
20
30
40
50
60
70
Q G, Total Gate Charge (nC)
Fig. 24 - Typical Gate Charge vs. VGE
ICE = 35A; L = 740μH
January 8, 2013
IRGP4650DPbF/IRGP4650D-EPbF
1
Thermal Response ( Z thJC )
D = 0.50
0.20
0.1
0.10
0.05
J
0.02
0.01
0.01
R1
R1
J
1
R2
R2
R3
R3
C

2
1
3
2
4
3
4
Ci= iRi
Ci iRi
1E-005
0.01041
0.000006
0.15911
0.000142
0.23643
0.002035
0.15465
0.013806
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
Ri (°C/W) i (sec)
R4
R4
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
Thermal Response ( Z thJC )
10
1
D = 0.50
0.1
0.01
0.001
0.0001
1E-006
0.20
0.10
0.05
J
0.02
0.01
R1
R1
J
1
R2
R2
R3
R3
C

1
2
2
3
3
Ci= iRi
Ci iRi
0.0001
4
4
0.01716
0.000031
0.35875
0.000517
0.41334
0.004192
0.20121 0.024392
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
Ri (°C/W) i (sec)
R4
R4
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
7
www.irf.com © 2012 International Rectifier
January 8, 2013
IRGP4650DPbF/IRGP4650D-EPbF
L
L
DUT
0
VCC
80 V +
-
1K
DUT
VCC
Rg
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
diode clamp /
DUT
L
4X
DC
-5V
VCC
DUT /
DRIVER
DUT
VCC
Rg
SCSOA
Fig.C.T.3 - S.C. SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
C force
R=
VCC
ICM
100K
D1
DUT
22K
C sense
VCC
Rg
G force
DUT
0.0075μF
E sense
E force
Fig.C.T.5 - Resistive Load Circuit
8
www.irf.com © 2012 International Rectifier
Fig.C.T.6 - BVCES Filter Circuit
January 8, 2013
IRGP4650DPbF/IRGP4650D-EPbF
600
tf
500
400
60
600
50
500
40
400
30
300
60
TEST
CURRENT
50
tr
40
20
30
90% test
current
200
5% V CE
10
5% ICE
0
0
5% V CE
10% test
current
100
0
-10
0
0.5
1
1.5
-100
2
-10
6.4
6.6
time(µs)
7
7.2
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
700
40
QRR
30
Vce (V)
10
0
-10
10%
Peak
IRR
Peak
IRR
350
ICE
600
t RR
20
V F (V)
6.8
time (µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 175°C using Fig. CT.4
-20
300
500
250
400
200
VCE
300
150
200
100
100
50
0
-30
-0.3
9
0
Eon
Loss
Eoff Loss
-100
-0.5
10
-0.2
-0.1
0
0.1
0.2
0
-100
-4.5
-50
0.5
5.5
10.5
time (µS)
Time (uS)
Fig. WF3 - Typ. Diode Recovery Waveform
@ TJ = 175°C using Fig. CT.4
Fig. WF4 - Typ. S.C. Waveform
@ TJ = 25°C using Fig. CT.3
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ICE (A)
100
20
ICE (A)
200
V CE (V)
300
ICE (A)
VCE (V)
90% ICE
January 8, 2013
IRGP4650DPbF/IRGP4650D-EPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
(;$03/( 7+,6,6$1,5)3(
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TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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January 8, 2013
IRGP4650DPbF/IRGP4650D-EPbF
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
(;$03/( 7+,6,6$1,5*3%.'(
:,7+$66(0%/<
/27&2'(
$66(0%/('21::
,17+($66(0%/</,1(+
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LQGLFDWHV/HDG)UHH
,17(51$7,21$/
5(&7,),(5
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+
$66(0%/<
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'$7(&2'(
<($5 :((.
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TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11
www.irf.com © 2012 International Rectifier
January 8, 2013
IRGP4650DPbF/IRGP4650D-EPbF
Qualification Information†
Qualification Level
Moisture Sensitivity Level
Industrial
(per International Rectifier’s internal guidelines)
TO-247AC
N/A
TO-247AD
N/A
RoHS Compliant
Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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January 8, 2013