Datasheet

AOL1414
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOL1414 uses advanced trench technology to
provide excellent RDS(ON), low gate chargeand low
gate resistance. This device is ideally suited for use
as a high side switch in CPU core power conversion.
VDS (V) = 30V
ID = 85A (VGS = 10V)
RDS(ON) < 6.5mΩ (VGS = 10V)
RDS(ON) < 7.5mΩ (VGS = 4.5V)
-RoHS Compliant
-Halogen and Antimony Free Green Device*
UIS Tested
Rg,Ciss,Coss,Crss Tested
Ultra SO-8TM Top View
D
D
Bottom tab
connected to
drain
G
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current B
Pulsed Drain Current
Avalanche Current C
C
Repetitive avalanche energy L=0.3mH
TC=25°C
70
IDM
200
Junction and Storage Temperature Range
Maximum Junction-to-Case
C
11
IAR
30
A
EAR
135
mJ
100
2.08
-55 to 175
Symbol
Alpha & Omega Semiconductor, Ltd.
W
1.3
TJ, TSTG
t ≤ 10s
Steady-State
Steady-State
W
50
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
A
IDSM
PD
TC=100°C
TA=25°C
Power Dissipation
V
14
TA=70°C
A
±12
ID
TA=25°C
Power Dissipation B
Units
V
85
TC=100°C
Continuous Drain
Current G
Maximum
30
RθJA
RθJC
Typ
14.4
37
1
°C
Max
25
60
1.5
Units
°C/W
°C/W
°C/W
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AOL1414
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
Typ
V
1
TJ=55°C
5
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±12V
Gate Threshold Voltage
VDS=VGS ID=250µA
1
ID(ON)
On state drain current
VGS=10V, VDS=5V
100
100
VGS=10V, ID=20A
1.5
6.5
6.9
8.3
7.5
VGS=4.5V, ID=20A
6
gFS
Forward Transconductance
VDS=5V, ID=20A
90
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
0.74
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
2100
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(4.5V) Total Gate Charge
VGS=4.5V, VDS=15V, ID=20A
V
mΩ
mΩ
S
1
V
85
A
2520
536
0.5
nA
2
4.9
Static Drain-Source On-Resistance
TJ=125°C
µA
A
RDS(ON)
Output Capacitance
Units
30
VDS=30V, VGS=0V
VGS(th)
Coss
Max
pF
pF
165
231
pF
0.95
1.5
Ω
19.7
24
nC
3.6
4.6
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
7.9
tD(on)
Turn-On DelayTime
5.9
10
ns
tr
Turn-On Rise Time
11
17
ns
tD(off)
Turn-Off DelayTime
36.2
55
ns
tf
Turn-Off Fall Time
12
18
ns
ns
nC
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
nC
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=100A/µs
35
42
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs
33
50
A: The value of RθJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
TC=25°C
Continuous
Drain Current
E.
The static characteristics
in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
C
F. These curves are basedTon
the junction-to-case
thermal impedence which is measured with the device mounted to a large heatsink,
C=100°
assuming a maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
* This device is guaranteed green after date code 8P11 (June 1ST 2008)
Rev 5: May 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
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AOL1414
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
60
10V
3.5V
50
50
VDS=5V
3V
40
40
ID(A)
ID (A)
125°C
30
30
20
25°C
20
VGS=2.5V
10
10
0
0
0
1
2
3
4
VDS (Volts)
Fig 1: On-Region Characteristics
5
7
1
1.5
2
2.5
3
VGS(Volts)
Figure 2: Transfer Characteristics
3.5
1.8
ID=20A
Normalized On-Resistance
6.5
VGS=4.5V
RDS(ON) (mΩ )
VGS=10V
1.6
6
1.4
5.5
5
VGS=4.5V
1.2
VGS=10V
4.5
4
1
0.8
0
10
20
30
40
50
60
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Continuous
Drain Current
TC=25°C
20
1.0E+02
TC=100°C
1.0E+01
16
125°C
1.0E+00
IS (A)
ID=20A
RDS(ON) (mΩ )
25
12
1.0E-01
25°C
1.0E-02
125°C
1.0E-03
8
25°C
1.0E-04
1.0E-05
4
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.2
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AOL1414
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3500
5
VDS=15V
ID=20A
3000
Capacitance (pF)
VGS (Volts)
4
3
2
2500
Ciss
2000
1500
Coss
1000
1
Crss
500
0
0
0
5
10
15
20
25
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
1000
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
250
10µs
RDS(ON)
limited
1ms
100µs
DC
10
TJ(Max)=175°C
TC=25°C
1
TJ(Max)=175°C
TC=25°C
210
Power (W)
100
ID (Amps)
5
170
130
90
50
0.1
0.0001
0.1
1
10
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Continuous Drain Current
TC=25°C
Zθ JC
Normalized Transient
Thermal Resistance
10
T =100°C
C
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJC=1.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
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AOL1414
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
TA=25°C
80
Power Dissipation (W)
ID(A), Peak Avalanche Current
100
60
40
20
0
90
60
30
0
0.00001
0.0001
0.001
0.01
0
25
50
75
100
125
150
175
TCASE (°C)
Figure 13: Power De-rating (Note B)
100
100
80
80
Power (W)
Current rating ID(A)
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
60
40
60
40
20
20
0
0
0
25
50
75
100
125
150
0.01
175
TCASE (°C)
Figure 14: Current De-rating (Note B)
0.1
1
10
100
1000
10000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
Continuous Drain Current
TC=25°C
Zθ JA Normalized Transient
Thermal Resistance
10
1
D=TonT/T
C=100°C
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
PD
0.001
Ton
T
Single Pulse
0.0001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
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AOL1414
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
L
Vgs
Ig
Alpha & Omega Semiconductor, Ltd.
Isd
+
VDC
-
IF
trr
dI/dt
IRM
Vdd
Vdd
Vds
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