UNISONIC TECHNOLOGIES CO., LTD UTT4N10 3.5A, 100V N-CHANNEL TRENCHMOS LOGIC LEVEL FET Power MOSFET 1 TO-252 DESCRIPTION The UTC UTT4N10 is an N-Channel Trench MOS Logic Level FET, it uses UTC’s advanced technology to provide customers with a minimum on-state resistance and low gate charge. The UTC UTT4N10 is suitable for consumer, computing and communications, etc. 1 SOT-223 FEATURES * RDS(ON) < 250mΩ @ VGS=5V, ID=1.75A SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT4N10G-AA3-R UTT4N10L-TN3-R UTT4N10G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package SOT-223 TO-252 Pin Assignment 1 2 3 G D S G D S Packing Tape Reel Tape Reel MARKING SOT-223 www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd TO-252 1 of 3 QW-R502-285.B UTT4N10 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage TJ≥25°C, TJ≤150°C VDSS 100 V Drain-Gate Voltage TJ≥25°C, TJ≤150°C, RGS=20kΩ VDGR 100 V Gate-Source Voltage VGSS ±16 V TC=100°C, VGS=5V 2.2 A Continuous ID Drain Current TC=25°C, VGS=5V 3.5 A Pulsed TC=25°C, tp≤10µs IDM 14 A Non-Repetitive VGS=5V, VDD≤15V, RGS=50Ω, IAS 3.5 A Avalanche Current Unclamped Non-Repetitive VGS=5V, VDD≤15V, RGS=50Ω, EAR 45 mJ Avalanche Energy ID=3.5A, Unclamped, tp=0.2ms SOT-223 6.9 W Power Dissipation PD TO-252 W Junction Temperature TJ -65~+150 °C Storage Temperature Range TSTG -65~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL CHARACTERISTICS PARAMETER SOT-223 TO-252 Junction to Ambient SYMBOL θJA RATINGS 150 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS PARAMETER OFF CHARACTERISTICS SYMBOL Drain-Source Breakdown Voltage Gate-Source Leakage Current Forward Reverse ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance BVDSS IGSS VGS(TH) RDS(ON) TEST CONDITIONS ID=250µA, VGS=0V, TJ=-55°C ID=250µA, VGS=0V, TJ=25°C VGS=+10V, VDS=0V, TJ=25°C VGS=-10V, VDS=0V, TJ=25°C 89 100 VDS=VGS, ID=250μA, TJ=25°C VGS=5V, ID=1.75A, TJ=25°C VGS=5V, ID=1.75A, TJ=150°C 1 SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) Rise Time tR VDS=50V, VGS=10V, RL=0.5Ω, RG(ext)=6Ω, TJ=25°C Turn-OFF Delay Time tD(OFF) Fall-Time tF Total Gate Charge QG VGS=10V, VDS=50V, ID=1.3A, Gate to Source Charge QGS TJ=25°C Gate to Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous IS TJ=25°C Current Maximum Body-Diode Pulsed Current ISM TJ=25°C, tp≤10µs Drain-Source Diode Forward Voltage VSD IS=3.5A, VGS=0V, TJ=25°C Body Diode Reverse Recovery Time tRR IS=3.5A, VGS=0V, dIS/dt=-100A/µs, VDS=30V, TJ=25°C Body Diode Reverse Recovery Charge QRR UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 130 10 100 -10 -100 V V nA nA 3 250 575 V mΩ mΩ 200 30 30 140 30 20 3.7 3.6 0.87 50 100 ns ns ns ns nC nC nC 3.5 A 14 1.5 A V ns nC 2 of 3 QW-R502-285.B UTT4N10 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-285.B