SSF3055 D DESCRIPTION The SSF3055 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a Battery protection or in other Switching application. G S Schematic diagram GENERAL FEATURES ● VDS = 25V,ID = 12A RDS(ON) < 120mΩ @ VGS=5V RDS(ON) < 90mΩ @ VGS=10V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package S 3 2 D 1 G Marking and pin Assignment Application ●Battery protection ●Load switch ●Power management TO-252(DPAK) top view PACKAGE MARKING AND ORDERING INFORMATION Device Marking 3055 Device SSF3055 Device Package To-252(DPAK) Reel Size - Tape width - ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS ID Drain Current-Continuous@ Current-Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Quantity - Limit Unit 25 ±20 12 45 48 -55 To 150 V V A A W ℃ 75 ℃/W THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250µA 25 V Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V 25 µA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V ±250 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250µA 1.2 2.5 V Drain-Source On-State Resistance RDS(ON) VGS=5V, ID=12A 70 120 mΩ VGS=10V, ID=12A 50 90 mΩ ON CHARACTERISTICS (Note 3) ©Silikron Semiconductor CO.,LTD. 2008.7.29 0.8 Version : 1.0 page 1 of 3 SSF3055 Forward Transconductance gFS VDS=15V,ID=12A 16 S 450 PF 200 PF DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Clss VDS=15V,VGS=0V, F=1.0MHz Output Capacitance Coss Reverse Transfer Capacitance Crss 60 PF Turn-on Delay Time td(on) 6 nS Turn-on Rise Time tr 6 nS 20 nS SWITCHING CHARACTERISTICS (Note 4) Turn-Off Delay Time td(off) VDS=15V,ID=12A VGS=10V,RGEN=2.5Ω RL=1Ω Turn-Off Fall Time tf 5 nS Total Gate Charge Qg 15 nC Gate-Source Charge Qgs 2.0 nC Gate-Drain Charge Qgd 7.0 nC VDS=12.5V,ID=6A,VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD Diode Forward Current (Note 2) IS Reverse Recovery Time trr Reverse Recovery Charge Qrr VGS=0V,IS=12A IF = IS, dlF/dt = 100A / µS 1.5 V 12 A 30 nS 43 nC NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ton tr Vdd td(on) Rgen td(off) Rl Vin Vgs toff tf D Vout 90% VOUT 90% INVERTED G 10% 10% 90% S VIN 50% 50% 10% PULSE WIDTH Figure 1: Switching Test Circuit ©Silikron Semiconductor CO.,LTD. 2008.7.29 Figure 2:Switching Waveforms Version : 1.0 page 2 of 3 SSF3055 TO-252 PACKAGE INFORMATION NOTES： 1. No current JEDEC outline for this package. 2. L3 and b3 dimensions establish a minimum mounting surface for terminal 3. 3. Dimension (without solder). 4. Add typically 0.002 inches (0.05mm) for solder plating. 5. L1 is the terminal length for soldering. 6. Position of lead to be measured 0.090 inches (2.28mm) from bottom of dimension D. 7. Controlling dimension: Inch. ©Silikron Semiconductor CO.,LTD. 2008.7.29 Version : 1.0 page 3 of 3