SSF8822

SSF8822
20V Dual N-Channel MOSFET
D1
DESCRIPTION
The SSF8822 uses advanced trench technology to
provide excellent R DS(ON), low gate charge and operation
with gate voltages as low as 0.8V. This device is suitable
for use as a uni-directional or bi-directional load switch,
facilitated by its common-drain configuration.
D2
G1
G2
S1
S2
Marking and pin Assignment
GENERAL FEATURES
● VDS = 20V,ID = 7A
RDS(ON) < 21mΩ @ VGS=10V
RDS(ON) < 24mΩ @ VGS=4.5V
RDS(ON) < 28mΩ @ VGS=3.6V
RDS(ON) < 32mΩ @ VGS=2.5V
RDS(ON) < 50mΩ @ VGS=1.8V
● High Power and current handing capability
● Lead free product
● Surface Mount Package
Schematic Diagram
APPLICATIONS
●Battery protection
●Load switch
●Power management
TSSOP-8 Top View
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
Tape Width
Quantity
SSF8822
SSF8822
TSSOP-8
Ø330mm
12mm
3000 units
ABSOLUTE MAXIMUM RATINGS (T A=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V DS
20
V
Gate-Source Voltage
V GS
±12
V
ID
7
A
IDM
30
A
PD
1.5
W
TJ,TSTG
-55 To 150
℃
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
ELECTRICAL CHARACTERISTICS (T A=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
℃/W
83
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current
IDSS
VDS=16V,VGS=0V
1
μA
Gate-Body Leakage Current
IGSS
VGS=±10V,VDS=0V
±100
nA
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Page 1 of 4
20
V
Rev.1.0
SSF8822
20V Dual N-Channel MOSFET
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=1mA
0.5
0.8
1
V
VGS=10V, ID=7A
16.4
21
VGS=4.5V, ID=6.6A
19
24
VGS=3.6V, ID=6A
21.7
28
VGS=2.5V, ID=5.5A
25
32
VGS=1.8V, ID=2A
36
50
VDS=5V,ID=7A
24
S
630
PF
160
PF
mΩ
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Clss
VDS=10V,VGS=0V,
F=1.0MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
135
PF
Turn-on Delay Time
td(on)
5.7
nS
Turn-on Rise Time
tr
11.5
nS
31.5
nS
9.7
nS
9.3
nC
0.6
nC
3.6
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS=10V, R L=1.4Ω
VGS=5V,RGEN=3Ω
V DS=10V,ID=7A,
VGS=4.5V
Body Diode Reverse Recovery Time
trr
IF=7A, dI/dt=100A/µs
15.2
nS
Body Diode Reverse Recovery Charge
Qrr
IF=7A, dI/dt=100A/µs
6.3
nC
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=1A
0.7
Diode Forward Current (Note 2)
IS
DRAIN-SOURCE DIODE CHARACTERISTICS
1
V
2.5
A
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
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Page 2 of 4
Rev.1.0
SSF8822
20V Dual N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ton
tr
Vdd
td(on)
Rl
Vin
Vgs
Rgen
D
toff
tf
td(off)
90%
Vout
VOUT
G
90%
INVERTED
10%
10%
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 2:Switching Waveforms
Figure 1:Switching Test Circuit
Square Wave Pluse Duration(sec)
Figure 3: Normalized Maximum Transient Thermal Impedance
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Page 3 of 4
Rev.1.0
SSF8822
20V Dual N-Channel MOSFET
TSSOP-8 PACKAGE INFORMATION
NOTES：
1. Dimensions are inclusive of plating
2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils.
3. Dimension L is measured in gauge plane.
4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
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Page 4 of 4
Rev.1.0