GDSSF2300B D DESCRIPTION The SSF2300B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. G S Schematic diagram GENERAL FEATURES ● VDS = 20V,ID = 4.5A RDS(ON) < 115mΩ @ VGS=2.5V RDS(ON) < 60mΩ @ VGS=4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Marking and pin Assignment Application ●Battery protection ●Load switch ●Power management SOT23-3 top view PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape width Quantity 2300B SSF2300B SOT23-3 Ø180mm 8 mm 3000 units ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±10 V ID 4.5 A IDM 16 A PD 1.2 W TJ,TSTG -55 To 150 ℃ RθJA 140 ℃/W Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) Suzhou Goodark Electronics Co., Ltd Version 1.0 GDSSF2300B ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 20 V Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V 1 μA Gate-Body Leakage Current IGSS VGS=±10V,VDS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 0.95 1.2 V 115 mΩ RDS(ON) VGS=2.5V, ID=3.1A 70 Drain-Source On-State Resistance VGS=4.5V, ID=3.6A 45 60 mΩ VDS=10V,ID=4.5A 8 S 500 PF 250 PF ON CHARACTERISTICS (Note 3) Forward Transconductance gFS 0.65 DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Clss VDS=10V,VGS=0V, F=1.0MHz Output Capacitance Coss Reverse Transfer Capacitance Crss 90 PF Turn-on Delay Time td(on) 7 nS Turn-on Rise Time tr 55 nS 16 nS SWITCHING CHARACTERISTICS (Note 4) Turn-Off Delay Time td(off) VDD=10V, RL = 2.8 Ω VGS=4.5V,RGEN=6Ω, ID=3.6A, Turn-Off Fall Time tf 10 nS Total Gate Charge Qg 10 nC Gate-Source Charge Qgs 2.3 nC Gate-Drain Charge Qgd 2.9 nC VDS=10V,ID=4.2A,VGS=4.5V DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD VGS=0V,IS=1.3A NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. Suzhou Goodark Electronics Co., Ltd Version 1.0 1.2 V GDSSF2300B TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ton tr Vdd td(on) Rl Vin Vgs Rgen D 90% Vout toff tf td(off) VOUT 90% INVERTED 10% 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 2:Switching Waveforms Normalized Effective Transient Thermal Impedance Figure 1: Switching Test Circuit Square Wave Pluse Duration(sec) Figure 3: Normalized Maximum Transient Thermal Impedance Suzhou Goodark Electronics Co., Ltd Version 1.0 GDSSF2300B SOT23-3 PACKAGE INFORMATION NOTES： 1. Tolerance ±0.10mm (4 mil) unless otherwise specified 2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 3. Dimension L is measured in gauge plane. 4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. Suzhou Goodark Electronics Co., Ltd Version 1.0