SSF2637E 20V P-Channel MOSFET DESCRIPTION The SSF2637E uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as -0.5V. GENERAL FEATURES ● VDS = -20V,ID =-5.4A RDS(ON) < 52mΩ @ VGS=-2.5V RDS(ON) < 43mΩ @ VGS=-4.5V Schematic Diagram ESD Rating：3000V HBM ● High Power and current handing capability ● Lead free product ● Surface Mount Package Marking and Pin Assignment D D D 8 7 APPLICATIONS D 6 5 2637E 4414 ●Battery protection ●Load switch ●Power management 1 2 3 4 S S S G SOP-8 Top View PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package 2637E SSF2637E SOP-8 Reel Size Tape Width ABSOLUTE MAXIMUM RATINGS (T A=25℃unless otherwise noted) Parameter Symbol Quantity Limit Unit Drain-Source Voltage V DS -20 V Gate-Source Voltage V GS ±12 V ID -5.4 A IDM -30 A PD 1.9 W TJ,TSTG -55 To 150 ℃ R θJA 40 ℃/W Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) www.goodark.com Page 1 of 4 Rev.1.0 SSF2637E 20V P-Channel MOSFET ELECTRICAL CHARACTERISTICS (T A=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA -20 V Zero Gate Voltage Drain Current IDSS VDS=-16V,VGS=0V -1 μA Gate-Body Leakage Current IGSS VGS=±8V,VDS=0V ±10 uA VGS(th) V DS=VGS,ID=-250μA -0.55 -1 V VGS=-4.5V, ID=-4A 37 43 mΩ VGS=-2.5V, ID=-4A 45 52 mΩ VGS=-1.8V, ID=-2A 56 73 mΩ ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance RDS(ON) g FS VDS=-5V,ID=-4A -0.3 4 8 S 1450 PF 200 PF DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Clss V DS=-10V,VGS=0V, F=1.0MHz Output Capacitance C oss Reverse Transfer Capacitance Crss 160 PF Turn-on Delay Time td(on) 9.5 nS Turn-on Rise Time tr 17 nS 90 nS 30 nS 17 nC 1.3 nC 4.5 nC SWITCHING CHARACTERISTICS (Note 4) Turn-Off Delay Time VDD=-10V,ID=-1A VGS=-4.5V,RGEN=3Ω td(off) Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=-10V,ID=-4A, VGS=-4.5V DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD VGS=0V,IS=-1A -0.76 -1 NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. www.goodark.com Page 2 of 4 Rev.1.0 V SSF2637E 20V P-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Vdd Vgs Rgen td(on) Rl Vin D ton tr Vout 90% VOUT G toff tf td(off) 90% INVERTED 10% 10% 90% S VIN 50% 50% 10% PULSE WIDTH Figure 1: Switching Test Circuit ZthJA Normalized Transient Thermal Resistance Figure 2:Switching Waveforms Square Wave Pluse Duration(sec) Figure 3: Normalized Maximum Transient Thermal Impedance www.goodark.com Page 3 of 4 Rev.1.0 SSF2637E 20V P-Channel MOSFET SOP-8 PACKAGE INFORMATION NOTES： 1. Dimensions are inclusive of plating 2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 3. Dimension L is measured in gauge plane. 4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. www.goodark.com Page 4 of 4 Rev.1.0