High-reliability discrete products and engineering services since 1977 2N5060-2N5064 SILICON CONTROLLED RECTIFIERS FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Symbol Value Unit VDRM VRRM 30 60 100 200 V On-state current RMS (180° conduction angles, TC = 80°C) IT(RMS) 0.8 A Average on-state current (180° conduction angles) (TC = 67°C) (TC = 102°C) IT(AV) Peak non-repetitive surge current (TA = 25°C) (1/2 cycle, sine wave, 60Hz) ITSM 10 A Circuit fusing considerations (t = 8.3 ms) I2t 0.4 A2s Peak repetitive off-state voltage (1) (TJ = -40 to +110°C, sine wave, 50 to 60 Hz, gate open) 2N5060 2N5061 2N5062 2N5064 A 0.51 0.255 Average on-state current (180° conduction angles) (TC = 67°C) (TC = 102°C) IT(AV) Forward peak gate power (Pulse width ≤ 1.0µsec; T A = 25°C) PGM 0.1 W Forward average gate power (TA = 25°C, t = 8.3ms) PG(AV) 0.01 W Forward peak gate current (Pulse width ≤ 1.0µsec; T A = 25°C) IGM 1.0 A Reverse peak gate voltage (Pulse width ≤ 1.0µsec; T A = 25°C) VRGM 5.0 V Operating junction temperature range TJ -40 to +110 °C Storage temperature range Tstg -40 to +150 °C A 0.51 0.255 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. THERMAL CHARACTERISTICS Symbol Max Unit Thermal resistance, junction to case Characteristics RθJC 75 °C/W Thermal resistance, junction to ambient RθJA 200 °C/W Lead solder temperature (lead length ≥ 1/16” from case, 10 s max.) - 230 °C Rev. 20130116 High-reliability discrete products and engineering services since 1977 2N5060-2N5064 SILICON CONTROLLED RECTIFIERS ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Characteristics Symbol Min Typ Max Unit IDRM, IRRM - - 10 50 µA VTM - - 1.7 V TC = 25°C TC = -40°C IGT - - 200 350 µA TC = 25°C TC = -40°C VGT - - 0.8 1.2 V VGD 0.1 - - V Symbol Min Typ Max Unit IH - - 5.0 10 mA td tr - 3.0 0.2 - µs tq - 10 30 - µs dv/dt - 30 - V/µs OFF CHARACTERISTICS Peak repetitive forward or reverse blocking current (2) (VAK = Rated VDRM or VRRM) TC = 25°C TC = 110°C ON CHARACTERISTICS Peak forward on-state voltage (3) (ITM = 1.2 A peak @ TA = 25°C) Gate trigger current (continuous DC) (VAK = 7.0 Vdc, RL = 100 Ω) (4) Gate trigger voltage (continuous DC) (4) (VAK = 7.0 Vdc, RL = 100 Ω) Gate non-trigger voltage (VAK = rated VDRM, RL = 100 Ω) TC = 110°C Characteristics ON CHARACTERISTICS Holding current (4) (VAK = 7.0 Vdc, initiating current = 20mA) TC = 25°C TC = -40°C Turn-on time Delay time Rise time (IGT = 1.0 mA, VD = rated VDRM, forward current = 1.0 A, di/dt = 6.0 A/µs) Turn-off time (forward current = 1.0 A pulse, Pulse width = 50µs, 0.1% duty cycle, di/dt = 6.0 A/µs, dv/dt = 20 V/µs, IGT = 1 mA) 2N5060, 2N5061 2N5062, 2N5064 DYNAMIC CHARACTERISTICS Critical rate of rise of off-state voltage (Rated VDRM, exponential) 2. 3. 4. RGK = 1000Ω is included in measurement. Forward current applied for 1 ms maximum duration, duty cycle ≤ 1%. RGK current is not included in measurement. Rev. 20130116 High-reliability discrete products and engineering services since 1977 2N5060-2N5064 SILICON CONTROLLED RECTIFIERS MECHANICAL CHARACTERISTICS Case: TO-92 Marking: Body painted, alpha-numeric Pin out: See below Rev. 20130116 High-reliability discrete products and engineering services since 1977 2N5060-2N5064 SILICON CONTROLLED RECTIFIERS Rev. 20130116 High-reliability discrete products and engineering services since 1977 2N5060-2N5064 SILICON CONTROLLED RECTIFIERS Rev. 20130116