2N4167 2N4174.aspx?ext=

High-reliability discrete products
and engineering services since 1977
2N4167-2N4174
SILICON CONTROLLED RECTIFIERS
FEATURES


Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Symbol
Peak repetitive forward and reverse blocking voltage
2N4167
2N4168
2N4169
2N4170
2N4172
2N4174
Value
25
50
100
200
400
600
VDRM, VRRM
Forward current RMS
Unit
IT(RMS)
V
8
A
Peak forward surge current
(one cycle, 60Hz, TJ = -40 to +100°C)
ITSM
Circuit fusing (t = 8.3ms)
I2t
40
A2s
Peak gate power
PGM
5
W
Average gate power
A
100
PG(AV)
0.5
W
Peak gate current
IGM
2
A
Peak gate voltage
VGM
10
V
Operating temperature range
TJ
-40 to +100
°C
Storage temperature range
Tstg
-40 to +150
°C
15
In. lb.
Stud torque
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Symbol
Typ.
Max
Unit
RӨJC
1.5
2.5
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Characteristic
Peak forward or reverse blocking current
(Rated VDRM or VRRM, gate open)
TC = 25°C
TC = 100°C
Symbol
IDRM, IRRM
Gate trigger current (continuous dc)
(VD = 7V, RL = 100Ω)
(VD = 7V, RL = 100Ω, T C = -40°C)
IGT
Gate trigger voltage (continuous dc)
(VD = 7V, RL = 100Ω)
(VD = 7V, RL = 100Ω, T C = -40°C)
(VD = 7V, RL = 100Ω, T C = 100°C)
VGT
Forward “on” voltage (pulsed, 1ms max., duty cycle ≤ 1%)
(ITM = 15.7A)
VTM
Min
Typ
Max
Unit
-
-
10
2
µA
mA
-
10
-
30
60
mA
0.2
0.75
-
1.5
2.5
-
-
1.4
2
V
V
Rev. 20130108
High-reliability discrete products
and engineering services since 1977
2N4167-2N4174
SILICON CONTROLLED RECTIFIERS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Characteristic
Symbol
Holding current
(VD = 7V, gate open)
(VD = 7V, gate open, TC = -40°C)
IH
Turn-on time (td+tr)
(IG = 20mA, IF = 5A, VD = rated VDRM)
ton
Turn-off time
(IF = 5A, IR = 5A)
(IF = 5A, IR = 5A, TC = 100°C, VD = rated VDRM)
(dv/dt = 30V/µs)
toff
Forward voltage application rate (exponential)
(Gate open, TC = 100°C, VD = rated VDRM)
Min
Typ
Max
-
10
-
30
60
-
1
-
-
15
25
-
-
50
-
Unit
mA
µs
µs
dv/dt
V/µs
MECHANICAL CHARACTERISTICS
Case:
TO-64
Marking:
Body painted, alpha-numeric
Pin out:
See below
Rev. 20130108
High-reliability discrete products
and engineering services since 1977
2N4167-2N4174
SILICON CONTROLLED RECTIFIERS
Rev. 20130108
High-reliability discrete products
and engineering services since 1977
2N4167-2N4174
SILICON CONTROLLED RECTIFIERS
Rev. 20130108