High-reliability discrete products and engineering services since 1977 2N5164-2N5171 SILICON CONTROLLED RECTIFIER FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Symbol Peak repetitive forward and reverse blocking voltage(1)(2) 2N5164, 2N5168 2N5165, 2N5169 2N5166, 2N5170 2N5167, 2N5171 Value 50 200 400 600 VRRM, VDRM Non repetitive peak reverse blocking voltage 2N5164, 2N5168 2N5165, 2N5169 2N5166, 2N5170 2N5167, 2N5171 VRSM Forward current RMS IT(RMS) Average on state current, TC = 67°C 75 300 500 700 Unit Volts Volts 20 Amps IT(AV) 13 Amps Circuit fusing considerations, TJ = -40 to +100°C; t = 8.3ms I2t 235 A2s Peak non-repetitive surge current (TJ = -40 to +100°C) (1 cycle, 60Hz preceded and followed by rated current and voltage) ITSM Peak gate power (maximum pulse width = 10µs) PGM 5 Watts Average gate power 240 Amps PG(AV) 0.5 Watts Forward peak gate current (maximum pulse width = 10µs) IGM 2 Amps Peak gate voltage VGM 10 Volts Operating junction temperature range TJ -40 to +100 °C Storage temperature range Tstg -40 to +150 °C - 30 In. lb. Mounting torque (2N5168-2N5171) Note 1: VDRM for all types can be applied on a continuous basis without incurring damage. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Note 2: Devices should not be operated with a positive bias applied to the gate concurrent with a negative potential applied to the anode. THERMAL CHARACTERISTICS Characteristic Thermal resistance, junction to case 2N5164, 2N5165, 2N5166, 2N5167 2N5168, 2N5169, 2N5170, 2N5171 Symbol Typical Maximum Unit RӨJC 1 1.1 1.5 1.6 °C/W Rev. 20150513 High-reliability discrete products and engineering services since 1977 2N5164-2N5171 SILICON CONTROLLED RECTIFIER ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Characteristic Peak forward blocking current (Rated VDRM or VRRM, gate open) TJ = 25°C TJ = 100°C Symbol IDRM or IRRM Gate trigger current (continuous dc)(1) (VD = 7 Vdc, RL = 100 Ω) (VD = 7 Vdc, RL = 100 Ω, T C = -40°C) IGT Gate trigger voltage (continuous dc) (VD = 7 Vdc, gate open) (VD = 7 Vdc, RL = 100 Ω, T C = -40°C) (VD = Rated VDRM, RL = 100 Ω, TJ = 100°C) VGT Peak on state voltage (pulse width = 1ms max., duty cycle ≤ 1%) (ITM = 20A) (ITM = 41A) Min. Max. Unit - 10 5 µA mA - 40 75 mA 0.2 1.5 2.5 - VTM Volts 8 1.5 1.7 - 50 90 Holding current (VD = 7Vdc, gate open) (VD = 7Vdc, gate open ,TC = -40°C) IH Gate controlled turn-on time (ITM = 20A, IGT = 40mA, VD = rated VDRM) tgt Typical Circuit commutated turn-off time (ITM = 10A, IR = 10A) (ITM = 10A, IR = 10A, TJ = 100°C) (VD = VDRM = rated voltage) (dv/dt = 30V/µs) tq 20 30 Critical rate of rise of off-state voltage (VD = rated VDRM, exponential waveform, TJ = 100°C, gate open) volts mA µs 1 dv/dt µs V/µs 50 Note 1: Devices should not be operated with a positive bias applied to the gate concurrent with a negative potential applied to the anode. Rev. 20150513 High-reliability discrete products and engineering services since 1977 2N5164-2N5171 SILICON CONTROLLED RECTIFIER MECHANICAL CHARACTERISTICS Case Digi PF1 (2N5164-2N5167) Marking Body painted, alpha-numeric DIGI PF1 A F G H J K L Q Inches Min Max 0.501 0.505 0.160 0.085 0.095 0.060 0.070 0.300 0.350 1.050 0.670 0.055 0.085 Millimeters Min Max 12.730 12.830 4.060 2.160 2.410 1.520 1.780 7.620 8.890 26.670 17.020 1.400 2.160 Rev. 20150513 High-reliability discrete products and engineering services since 1977 2N5164-2N5171 SILICON CONTROLLED RECTIFIER MECHANICAL CHARACTERISTICS Case TO-48 (2N5168-2N5171) Marking Body painted, alpha-numeric Polarity Anode is stud Rev. 20150513 High-reliability discrete products and engineering services since 1977 2N5164-2N5171 SILICON CONTROLLED RECTIFIER Rev. 20150513 High-reliability discrete products and engineering services since 1977 2N5164-2N5171 SILICON CONTROLLED RECTIFIER Rev. 20150513 High-reliability discrete products and engineering services since 1977 2N5164-2N5171 SILICON CONTROLLED RECTIFIER Rev. 20150513