2N5164 2N5171.aspx?ext=

High-reliability discrete products
and engineering services since 1977
2N5164-2N5171
SILICON CONTROLLED RECTIFIER
FEATURES


Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Symbol
Peak repetitive forward and reverse blocking voltage(1)(2)
2N5164, 2N5168
2N5165, 2N5169
2N5166, 2N5170
2N5167, 2N5171
Value
50
200
400
600
VRRM, VDRM
Non repetitive peak reverse blocking voltage
2N5164, 2N5168
2N5165, 2N5169
2N5166, 2N5170
2N5167, 2N5171
VRSM
Forward current RMS
IT(RMS)
Average on state current, TC = 67°C
75
300
500
700
Unit
Volts
Volts
20
Amps
IT(AV)
13
Amps
Circuit fusing considerations, TJ = -40 to +100°C; t = 8.3ms
I2t
235
A2s
Peak non-repetitive surge current (TJ = -40 to +100°C)
(1 cycle, 60Hz preceded and followed by rated current and voltage)
ITSM
Peak gate power (maximum pulse width = 10µs)
PGM
5
Watts
Average gate power
240
Amps
PG(AV)
0.5
Watts
Forward peak gate current (maximum pulse width = 10µs)
IGM
2
Amps
Peak gate voltage
VGM
10
Volts
Operating junction temperature range
TJ
-40 to +100
°C
Storage temperature range
Tstg
-40 to +150
°C
-
30
In. lb.
Mounting torque (2N5168-2N5171)
Note 1: VDRM for all types can be applied on a continuous basis without incurring damage. Ratings apply for zero or negative gate voltage; however,
positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
Note 2: Devices should not be operated with a positive bias applied to the gate concurrent with a negative potential applied to the anode.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
2N5164, 2N5165, 2N5166, 2N5167
2N5168, 2N5169, 2N5170, 2N5171
Symbol
Typical
Maximum
Unit
RӨJC
1
1.1
1.5
1.6
°C/W
Rev. 20150513
High-reliability discrete products
and engineering services since 1977
2N5164-2N5171
SILICON CONTROLLED RECTIFIER
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Characteristic
Peak forward blocking current
(Rated VDRM or VRRM, gate open)
TJ = 25°C
TJ = 100°C
Symbol
IDRM or IRRM
Gate trigger current (continuous dc)(1)
(VD = 7 Vdc, RL = 100 Ω)
(VD = 7 Vdc, RL = 100 Ω, T C = -40°C)
IGT
Gate trigger voltage (continuous dc)
(VD = 7 Vdc, gate open)
(VD = 7 Vdc, RL = 100 Ω, T C = -40°C)
(VD = Rated VDRM, RL = 100 Ω, TJ = 100°C)
VGT
Peak on state voltage
(pulse width = 1ms max., duty cycle ≤ 1%)
(ITM = 20A)
(ITM = 41A)
Min.
Max.
Unit
-
10
5
µA
mA
-
40
75
mA
0.2
1.5
2.5
-
VTM
Volts
8
1.5
1.7
-
50
90
Holding current
(VD = 7Vdc, gate open)
(VD = 7Vdc, gate open ,TC = -40°C)
IH
Gate controlled turn-on time
(ITM = 20A, IGT = 40mA, VD = rated VDRM)
tgt
Typical
Circuit commutated turn-off time
(ITM = 10A, IR = 10A)
(ITM = 10A, IR = 10A, TJ = 100°C)
(VD = VDRM = rated voltage)
(dv/dt = 30V/µs)
tq
20
30
Critical rate of rise of off-state voltage
(VD = rated VDRM, exponential waveform, TJ = 100°C, gate
open)
volts
mA
µs
1
dv/dt
µs
V/µs
50
Note 1: Devices should not be operated with a positive bias applied to the gate concurrent with a negative potential applied to the anode.
Rev. 20150513
High-reliability discrete products
and engineering services since 1977
2N5164-2N5171
SILICON CONTROLLED RECTIFIER
MECHANICAL CHARACTERISTICS
Case
Digi PF1 (2N5164-2N5167)
Marking
Body painted, alpha-numeric
DIGI PF1
A
F
G
H
J
K
L
Q
Inches
Min
Max
0.501
0.505
0.160
0.085
0.095
0.060
0.070
0.300
0.350
1.050
0.670
0.055
0.085
Millimeters
Min
Max
12.730
12.830
4.060
2.160
2.410
1.520
1.780
7.620
8.890
26.670
17.020
1.400
2.160
Rev. 20150513
High-reliability discrete products
and engineering services since 1977
2N5164-2N5171
SILICON CONTROLLED RECTIFIER
MECHANICAL CHARACTERISTICS
Case
TO-48 (2N5168-2N5171)
Marking
Body painted, alpha-numeric
Polarity
Anode is stud
Rev. 20150513
High-reliability discrete products
and engineering services since 1977
2N5164-2N5171
SILICON CONTROLLED RECTIFIER
Rev. 20150513
High-reliability discrete products
and engineering services since 1977
2N5164-2N5171
SILICON CONTROLLED RECTIFIER
Rev. 20150513
High-reliability discrete products
and engineering services since 1977
2N5164-2N5171
SILICON CONTROLLED RECTIFIER
Rev. 20150513