Transistors 2SD0968A (2SD968A) Silicon NPN epitaxial planar type Unit: mm 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 1.5±0.1 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 0.4±0.04 ■ Absolute Maximum Ratings Ta = 25°C 0.4 max. 3˚ 2.6±0.1 • High collector-emitter voltage (Base open) VCEO • Large collector power dissipation PC • Mini power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing 3˚ ■ Features 2.5±0.1 For low-frequency driver amplification Complementary to 2SB0789A (2SB789A) 45˚ 3.0±0.15 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 120 V Collector-emitter voltage (Base open) VCEO 120 V Emitter-base voltage (Collector open) VEBO 5 V Peak collector current ICP 1 A Collector current IC 0.5 A Collector power dissipation * PC 1 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 1: Base 2: Collector 3: Emitter MiniP3-F1 Package Marking Symbol: V Note) *: Print circuit board: Copper foil area of 1 cm2 or more, and the board thickness of 1.7 mm for the collector portion. ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit Collector-emitter voltage (Base open) VCEO IC = 100 µA, IB = 0 120 V Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 5 V VCE = 10 V, IC = 150 mA 130 hFE2 VCE = 5 V, IC = 500 mA 50 Collector-emitter saturation voltage *1 VCE(sat) IC = 500 mA, IB = 50 mA 0.2 0.6 V Base-emitter saturation voltage *1 VBE(sat) IC = 500 mA, IB = 50 mA 0.85 1.20 V VCB = 10 V, IE = −50 mA, f = 200 MHz 120 Forward current transfer ratio *1 Transition frequency hFE1 *2 fT Collector output capacitance (Common base, input open circuited) VCB = 10 V, IE = 0, f = 1 MHz Cob 330 MHz 20 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank R S hFE1 130 to 220 185 to 330 Note) The part numbers in the parenthesis show conventional part number. Publication date: December 2003 SJC00202DED 1 2SD0968A IC VCE 1.0 1.0 0.8 0.6 0.4 0.4 2 mA 40 80 120 0 160 10 Ta = 75°C 25°C −25°C 10 −2 0 100 6 8 10 0 12 0 25°C Ta = −25°C 1 75°C 10 −1 1 10 100 1 000 Collector current IC (mA) 80 40 −10 Emitter current IE (mA) −100 Collector output capacitance C (pF) (Common base, input open circuited) ob 120 50 IE = 0 f = 1 MHz Ta = 25°C 40 30 20 10 0 1 10 Collector-base voltage VCB (V) SJC00202DED 10 300 15 VCE = 10 V 250 Ta = 75°C 200 25°C 150 −25°C 100 50 0 1 10 100 Collector current IC (mA) Cob VCB VCB = 10 V Ta = 25°C 5 Base current IB (mA) hFE IC 10 1 000 160 0 −1 4 IC / IB = 10 fT I E 200 2 102 10 −2 10 0.4 VBE(sat) IC 1 1 0.6 Collector-emitter voltage VCE (V) IC / IB = 10 10 −1 0.8 0.2 Forward current transfer ratio hFE 0 Base-emitter saturation voltage VBE(sat) (V) Collector-emitter saturation voltage VCE(sat) (V) 1.0 4 mA Collector current IC (mA) Transition frequency fT (MHz) VCE = 10 V Ta = 25°C 0.6 VCE(sat) IC 2 Ta = 25°C 12 mA 10 mA 8 mA 6 mA 0.8 Ambient temperature Ta (°C) 10 −3 1.2 0.2 0.2 0 IC I B 18 mA 16 mA 14 mA 1.2 IB = 20 mA Copper plate at the collector is more than 1 cm2 in area, 1.7 mm in thickness Collector current IC (A) Collector power dissipation PC (W) 1.2 Collector current IC (A) PC Ta 1.4 100 1 000 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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