Transistors 2SB1693 Silicon PNP epitaxial planar type For general amplification Unit: mm 0.40+0.10 –0.05 ■ Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2.8+0.2 –0.3 3 • Large collector current IC • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing (0.95) (0.95) 1.9±0.1 (0.65) 2 1 2.90+0.20 –0.05 ■ Absolute Maximum Ratings Ta = 25°C Unit Collector-base voltage (Emitter open) VCBO −40 V Collector-emitter voltage (Base open) VCEO −20 V Emitter-base voltage (Collector open) VEBO −15 V Collector current IC − 0.5 A Peak collector current ICP −1 A Collector power dissipation PC 200 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 10˚ 1.1+0.2 –0.1 Rating 1.1+0.3 –0.1 Symbol 0 to 0.1 Parameter 1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package Marking Symbol: 3D ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0 −40 V Collector-emitter voltage (Base open) VCEO IC = −2 mA, IB = 0 −20 V Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0 −15 Forward current transfer ratio * hFE1 VCE = −2 V, IC = −100 mA 160 hFE2 VCE = −2 V, IC = −500 mA 100 VCE(sat) IC = −100 mA, IB = −10 mA Collector-emitter saturation voltage * Transition frequency Collector output capacitance (Common base, input open circuited) fT Cob Conditions Min Typ Max Unit V 560 −60 −300 mV IC = − 0.5 A, IB = −25 mA −210 −500 VCB = −5 V, IE = 50 mA, f = 200 MHz 170 MHz VCB = −10 V, IE = 0, f = 1 MHz 16 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Pulse measurement Publication date: September 2003 SJC00292AED 1 2SB1693 PC Ta IC VCE − 0.9 mA IB = −1.0 mA − 0.7 mA − 0.6 mA Collector current IC (A) 160 − 0.5 mA − 0.2 120 80 − 0.4 mA − 0.3 mA 40 − 0.1 mA 0 40 80 120 160 −2 0 Ambient temperature Ta (°C) Collector-emitter saturation voltage VCE(sat) (V) − 0.10 Collector current IC (A) Ta = 75°C − 0.08 −25°C 25°C −6 − 0.04 − 0.02 0 − 0.2 − 0.4 − 0.6 − 0.8 −1.0 −1.2 −8 400 Ta = 75°C 25°C −25°C −10−3 −1 −10 Collector output capacitance C (pF) (Common base, input open circuited) ob f = 1 MHz Ta = 25°C 10 0 −10 −20 −30 0 IC / IB = 10 Cob VCB 1 0 −12 − 0.2 − 0.4 − 0.6 − 0.8 hFE IC Collector current IC (mA) Base-emitter voltage VBE (V) 100 −10 VCE(sat) IC −10−2 − 0.06 0 −4 − 0.05 Base current IB (mA) −10−1 VCE = −2 V − 0.15 Collector-emitter voltage VCE (V) IC VBE − 0.12 − 0.20 − 0.10 − 0.2 mA − 0.1 0 VCE = −2 V − 0.25 − 0.8 mA − 0.3 Forward current transfer ratio hFE Collector power dissipation PC (mW) Ta = 25°C 200 0 −40 Collector-base voltage VCB (V) 2 IC I B − 0.30 Collector current IC (A) − 0.4 240 SJC00292AED −100 Ta = 75°C −1.0 VCE = −2 V 25°C 300 −25°C 200 100 0 −1 −10 Collector current IC (mA) −100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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