Transistors 2SB0710 (2SB710), 2SB0710A (2SB710A) Silicon PNP epitaxial planar type For general amplification Complementary to 2SD0602 (2SD602), 2SD0602A (2SD602A) Unit: mm 0.40+0.10 –0.05 ■ Features 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2SB0710A Collector-emitter voltage 2SB0710 (Base open) Unit VCBO −30 V −25 VCEO V −50 VEBO −5 V Collector current IC − 0.5 A Peak collector current ICP −1 A Collector power dissipation PC 200 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0.4±0.2 10˚ −60 2SB0710A Emitter-base voltage (Collector open) 2.90+0.20 –0.05 1.1+0.2 –0.1 2SB0710 (Emitter open) Rating 1.1+0.3 –0.1 Collector-base voltage Symbol 0 to 0.1 Parameter (0.65) 2 1 ■ Absolute Maximum Ratings Ta = 25°C 5˚ 1.50+0.25 –0.05 • Large collector current IC • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing 2.8+0.2 –0.3 3 1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package Marking Symbol: • 2SB0710: C • 2SB0710A: D ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) 2SB0710 Collector-emitter voltage (Base open) 2SB0710 VCBO Conditions Min IC = −10 µA, IE = 0 IC = −10 mA, IB = 0 Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0 Collector-base cutoff current (Emitter open) ICBO VCB = −20 V, IE = 0 Base-emitter saturation voltage Transition frequency −5 V VCE = −10 V, IC = −150 mA 85 hFE2 VCE = −10 V, IC = −500 mA 40 VCE(sat) IC = −300 mA, IB = −30 mA VBE(sat) IC = −300 mA, IB = −30 mA −1.1 VCB = −10 V, IE = 50 mA, f = 200 MHz 200 *2 fT Collector output capacitance (Common base, input open circuited) V −50 hFE1 *1 V −25 2SB0710A Collector-emitter saturation voltage *1 Unit −60 VCEO Forward current transfer ratio Max −30 2SB0710A *1 Typ Cob − 0.1 µA 340 − 0.35 − 0.60 VCB = −10 V, IE = 0, f = 1 MHz 6 −1.5 V V MHz 15 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Product of no-rank is not Rank Q R S No-rank classified and have no hFE1 85 to 170 120 to 240 170 to 340 85 to 340 marking symbol for rank. 2SB0710 CQ CR CS C Marking symbol 2SB0710A DQ DR DS D Note) The part numbers in the parenthesis show conventional part number. Publication date: May 2003 SJC00048CED 1 2SB0710, 2SB0710A PC Ta IC VCE IB = −10 mA −9 mA −8 mA −7 mA −6 mA −5 mA −4 mA −400 80 −3 mA −2 mA −200 40 0 80 120 160 0 –2 −1 25°C Ta=75°C −25°C −100 −10 −100 −1 000 −1 Ta = −25°C −10 −100 200 160 120 80 40 Emitter current IE (mA) 100 Collector output capacitance C (pF) (Common base, input open circuited) ob VCB = −10 V Ta = 25°C 24 500 400 300 Ta = 75°C 25°C −25°C 200 100 8 4 −100 Collector-base voltage VCB (V) SJC00048CED − 0.1 −1 −10 VCER RBE 12 −10 −10 Collector current IC (A) 16 0 −1 −8 VCE = −10 V 0 − 0.01 −1 000 IE = 0 f = 1 MHz Ta = 25°C 20 −6 hFE IC 75°C − 0.01 −1 −4 600 Cob VCB 10 −2 0 Base current IB (mA) IC / IB = 10 25°C fT I E Transition frequency fT (MHz) 0 Collector current IC (mA) 240 2 −100 –12 −10 Collector current IC (mA) 1 –10 − 0.1 − 0.01 − 0.001 −1 –8 −200 VBE(sat) IC IC / IB = 10 Base-emitter saturation voltage VBE(sat) (V) Collector-emitter saturation voltage VCE(sat) (V) VCE(sat) IC − 0.1 –6 −300 Collector-emitter voltage VCE (V) Ambient temperature Ta (°C) −10 –4 −400 Forward current transfer ratio hFE 40 −500 −120 Collector-emitter voltage (V) (Resistor between B and E) VCER 0 −1 mA Collector current IC (mA) −600 −600 120 VCE = −10 V Ta = 25°C −700 Collector current IC (mA) Collector power dissipation PC (mW) Ta = 25°C −800 160 0 −800 −1 000 200 0 IC I B −1 200 240 IC = −2 mA Ta = 25°C −100 −80 −60 2SB0710A −40 2SB0710 −20 0 1 10 100 1 000 Base-emitter resistance RBE (kΩ) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL