Transistors 2SC6036 Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2162 Unit: mm 0.33+0.05 −0.02 Features 0.10+0.05 −0.02 (0.40) (0.40) 0.80±0.05 1.20±0.05 Absolute Maximum Ratings Ta = 25°C Unit Collector-base voltage (Emitter open) VCBO 15 V Collector-emitter voltage (Base open) VCEO 12 V Emitter-base voltage (Collector open) VEBO 5 V Collector current IC 500 mA Peak collector current ICP 1 A Collector power dissipation PC 100 mW Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C 5° 1: Base 2: Emitter 3: Collecter 0.15 max. Rating 0.52±0.03 Symbol 0 to 0.01 Parameter 0.15 min. 5° 2 0.15 min. 1 0.23+0.05 −0.02 1.20±0.05 0.80±0.05 3 Low collector-emitter saturation voltage VCE(sat) SSS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing SSSMini3-F1 Package Marking Symbol : 4U Electrical Characteristics Ta = 25°C±3°C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 15 V Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0 12 V Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 5 V Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0 Forward current transfer ratio hFE VCE = 2 V, IC = 10 mA Collector-emitter saturation voltage VCE(sat) 270 IC = 200 mA, IB = 10 mA 0.1 µA 680 250 mV Transition frequency fT VCB = 2 V, IE = –10 mA, f = 200 MHz 200 MHz Collector output capacitance (Common base, input open circuited) Cob VCB = 10 V, f = 1 MHz 4.5 pF Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date : December 2004 SJC00324AED 1 2SC6036 2SC6036_ PC-Ta IC VCE Ta = 25°C 100 80 60 40 20 80 140 µA 120 µA 60 100 µA 80 µA 40 60 µA 20 20 40 60 80 0 100 120 140 40 µA 4 5 −25°C 25°C 40 30 20 0 6 0 0.2 0.4 0.6 0.8 1.0 1.2 Base-emitter voltage VBE (V) 2SC6036_ VCE(sat)-IC 2SC6036_ hFE-IC 2SC6036_ Cob-VCB 1 hFE IC IC / IB = 20 0.1 Ta = 85°C −25°C 25°C 10 100 1 000 VCE = 2V Ta = 85°C 600 500 25°C 400 −25°C 300 200 100 0 1 10 100 Collector current IC (mA) SJC00324AED 1.4 Cob VCB 700 Forward current transfer ratio hFE Collector-emitter saturation voltage VCE(sat) (V) 3 Ta = 85°C 50 Collector-emitter voltage VCE (V) Collector current IC (mA) 2 2 60 Ambient temperature Ta (°C) VCE(sat) IC 1 1 70 10 20 µA 0 80 1 000 Collector output capacitance (Common base, input open circuited) Cob (pF) 0 VCE = 2 V 90 IB = 160 µA Collector current IC (mA) 100 0.01 IC VBE 100 120 Collector current IC (mA) Collector power dissipation PC (mW) 120 0 2SC6036_ IC-VBE 2SC6036_ IC-VCE PC Ta 10 1 f = 1 MHz Ta = 25°C 0 5 10 15 20 25 30 35 40 Collector-base voltage VCB (V) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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