Transistors 2SB0790 (2SB790) Silicon PNP epitaxial planar type For low-frequency output amplification Unit: mm 2.5±0.1 (1.0) (1.0) (1.5) R 0.9 2.4±0.2 ■ Absolute Maximum Ratings Ta = 25°C 4.1±0.2 2.0±0.2 R 0.7 4.5±0.1 3.5±0.1 (1.5) 1.0±0.1 • Low collector-emitter saturation voltage VCE(sat) • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. (0.4) 6.9±0.1 ■ Features (0.85) Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −25 V Collector-emitter voltage (Base open) VCEO −20 V Emitter-base voltage (Collector open) VEBO −7 V − 0.5 Collector current IC Peak collector current ICP −1 A Collector power dissipation PC 600 mW 3 A Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0.45±0.05 0.55±0.1 2 (2.5) 1.25±0.05 Parameter 1 1: Base 2: Collector 3: Emitter M-A1 Package (2.5) ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0 −25 V Collector-emitter voltage (Base open) VCEO IC = −1 mA, IB = 0 −20 V Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0 −7 Collector-base cutoff current (Emitter open) ICBO VCB = −25 V, IE = 0 ICEO VCE = −20 V, IB = 0 Collector-emitter cutoff current (Base open) Conditions VCE = −2 V, IC = − 0.5 A 90 VCE = −2 V, IC = −1 A 25 Forward current transfer ratio *1 hFE1 *2 Collector-emitter saturation voltage *1 VCE(sat) IC = −500 mA, IB = −50 mA VBE(sat) IC = −500 mA, IB = −50 mA hFE2 Base-emitter saturation voltage *1 Transition frequency fT Collector output capacitance (Common base, input open circuited) Cob Min Typ Max Unit V − 0.1 µA −1 µA 220 − 0.4 −1.2 VCB = −10 V, IE = 50 mA, f = 200 MHz 150 VCB = −10 V, IE = 0, f = 1 MHz 15 V V MHz 25 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank Q R hFE1 90 to 155 130 to 220 Note) The part number in the parenthesis shows conventional part number. Publication date: January 2003 SJC00057BED 1 2SB0790 IC VCE Collector current IC (mA) −9 mA −8 mA −7 mA − 0.8 500 −6 mA −5 mA − 0.6 400 300 −4 mA −3 mA − 0.4 200 −2 mA −1 mA − 0.2 100 0 20 40 60 0 80 100 120 140 160 −1 0 Forward current transfer ratio hFE Base-emitter saturation voltage VBE(sat) (V) Ta = −25°C 75°C − 0.1 −6 Ta = 75°C 25°C − 0.01 − 0.01 −25°C − 0.1 −10 fT I E 320 VCE = −2 V VCB = −10 V Ta = 25°C 280 500 400 300 Ta = 75°C 25°C 200 −1 Collector current IC (A) −25°C 100 240 200 160 120 80 40 − 0.01 − 0.01 − 0.1 −1 −10 0 − 0.01 − 0.1 −1 Collector current IC (A) Collector current IC (A) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob −5 −1 hFE IC −10 −1 −4 600 IC / IB = 10 25°C −3 −10 Collector-emitter voltage VCE (V) VBE(sat) IC −100 −2 IC / IB = 10 − 0.1 Transition frequency fT (MHz) Collector power dissipation PC (mW) Ta = 25°C −1.0 600 Ambient temperature Ta (°C) 80 IE = 0 f = 1 MHz Ta = 25°C 70 60 50 40 30 20 10 0 −1 −10 −100 Collector-base voltage VCB (V) 2 −100 IB = −10 mA 700 0 VCE(sat) IC −1.2 Collector-emitter saturation voltage VCE(sat) (V) PC Ta 800 SJC00057BED −10 0 0.1 1 10 Emitter current IE (mA) 100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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