Transistors 2SC4656 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1791 Unit: mm 0.2+0.1 –0.05 0.15+0.1 –0.05 3 1˚ ■ Features (0.4) 2 (0.3) 1 (0.5) (0.5) 1.0±0.1 1.6±0.1 5˚ Rating Unit VCBO 50 V Collector-emitter voltage (Base open) VCEO 50 V Emitter-base voltage (Collector open) VEBO 5 V Collector current IC 50 mA Collector power dissipation PC 125 mW Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 0.45±0.1 Symbol 0 to 0.1 Parameter 0.75±0.15 ■ Absolute Maximum Ratings Ta = 25°C Collector-base voltage (Emitter open) 0.2±0.1 0.8±0.1 1.6±0.15 • Small collector output capacitance (Common base, input open circuited) Cob • SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing 1: Base 2: Emitter 3: Collector EIAJ: SC-75 SSMini3-G1 Package Marking Symbol: AM ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 50 Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0 50 V Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 5 V Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = 10 V, IB = 0 100 µA hFE VCE = 10 V, IC = 2 mA 500 VCE(sat) IC = 10 mA, IB = 1 mA 0.06 0.30 V VCB = 10 V, IE = −2 mA, f = 200 MHz 250 MHz VCB = 10 V, IE = 0, f = 1 MHz 1.5 pF Forward current transfer ratio * Collector-emitter saturation voltage Transition frequency fT Collector output capacitance (Common base, input open circuited) Cob Conditions Min Typ Max Unit V 200 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank Q R hFE 200 to 400 250 to 500 Publication date: February 2003 SJC00165BED 1 2SC4656 PC Ta IC VCE Ta = 25°C 75 50 IB = 300 µA 80 250 µA 60 200 µA 150 µA 40 100 µA 40 Ta = 75°C 30 −25°C 20 10 20 25 VCE = 10 V 25°C 50 Collector current IC (mA) Collector current IC (mA) 50 µA 0 40 80 120 0 160 0 0 2 Forward current transfer ratio hFE 1 Ta = 75°C −25°C 0.01 1 10 100 1 000 Collector current IC (mA) Ta = 75°C 400 25°C −25°C 300 200 100 0 0.1 1 10 Collector current IC (mA) Collector output capacitance C (pF) (Common base, input open circuited) ob 4 3 2 1 0 1 0 10 100 Collector-base voltage VCB (V) SJC00165BED 0.2 0.4 0.6 0.8 1.0 1.2 Base-emitter voltage VBE (V) fT I E 500 IE = 0 f = 1 MHz Ta = 25°C 5 12 600 VCE = 10 V Cob VCB 6 10 hFE IC 10 25°C 8 600 IC / IB = 10 0.1 6 Collector-emitter voltage VCE (V) VCE(sat) IC 100 4 VCB = 10 V Ta = 25°C Transition frequency fT (MHz) Collector power dissipation PC (mW) 100 Ambient temperature Ta (°C) Collector-emitter saturation voltage VCE(sat) (V) 60 100 125 0 2 IC VBE 120 150 100 500 400 300 200 100 0 − 0.1 −1 −10 Emitter current IE (mA) −100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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