Transistor 2SC4782 Silicon NPN epitaxial planer type For high speed switching Unit: mm +0.2 2.8 –0.3 1.45 0.95 3 +0.1 1.9±0.2 0.65±0.15 1 0.95 ● +0.2 ● 0.65±0.15 High-speed switching. Low collector to emitter saturation voltage VCE(sat). Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2.9 –0.05 ● +0.25 1.5 –0.05 0.4 –0.05 ■ Features Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCES 20 V Emitter to base voltage VEBO 5 V Peak collector current ICP 300 mA Collector current IC 200 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics +0.1 0.1 to 0.3 0.4±0.2 1:Base 2:Emitter 3:Collector 0 to 0.1 Parameter 0.16 –0.06 (Ta=25˚C) 0.8 1.1 –0.1 ■ Absolute Maximum Ratings +0.2 2 JEDEC:TO–236 EIAJ:SC–59 Mini Type Package Marking symbol : DV (Ta=25˚C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 10V, IE = 0 0.1 µA Emitter cutoff current IEBO VEB = 4V, IC = 0 0.1 µA Forward current transfer ratio hFE * VCE = 1V, IC = 10mA Collector to emitter saturation voltage VCE(sat) IC = 10mA, IB = 1mA Base to emitter saturation voltage VBE(sat) IC = 10mA, IB = 1mA Transition frequency fT VCB = 10V, IE = –10mA, f = 200MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz Turn-on time ton Turn-off time toff Storage time tstg *h FE Refer to the measurment circuit 40 200 200 0.17 0.25 0.76 1.0 500 2 V V MHz 4 pF 17 ns 15 ns 7 ns Rank classification Rank P Q R hFE 40 ~ 80 60 ~ 120 90 ~ 200 Marking Symbol DVP DVQ DVR 1 Transistor 2SC4782 Switching time measurement circuit ton, toff Test Circuit PC — Ta tstg Test Circuit 0.1µF Vout A Vin=10V 1kΩ 910Ω 220Ω 0.1µF 500Ω 50Ω 3.3kΩ Vout 90Ω Vin=10V 3.3kΩ 50Ω VCC=3V Vbb= –3V Vin VCC=10V 50Ω Vbb=2V 10% Vin 10% 90% Vout 500Ω 0 Vin 10% Vout 10% 90% Vout ton toff Collector power dissipation PC (mW) 0.1µF 240 200 160 120 80 40 0 tstg 0 (Waveform at A) VCE(sat) — IC Ta=25˚C IB=3.0mA 2.5mA 80 2.0mA 1.5mA 60 1.0mA 40 0.5mA 20 0 0 0.2 0.4 0.6 0.8 1.0 100 IC/IB=10 30 10 3 1 25˚C 0.3 Ta=75˚C –25˚C 0.1 0.03 0.01 1.2 3 10 30 Transition frequency fT (MHz) Forward current transfer ratio hFE 120 Ta=75˚C 25˚C –25˚C 40 0.3 1 3 10 30 Collector current IC (mA) 2 100 300 3 Ta=–25˚C 25˚C 75˚C 1 0.3 0.1 0.03 1000 1 3 10 100 800 600 400 200 0 –1 30 100 300 1000 Collector current IC (mA) Cob — VCB VCB=10V Ta=25˚C f=200MHz 1000 160 0 0.1 10 fT — I E 1200 VCE=1V 80 IC/IB=10 30 Collector current IC (mA) hFE — IC 200 80 100 120 140 160 0.01 1 Collector to emitter voltage VCE (V) 240 60 100 6 Collector output capacitance Cob (pF) Collector current IC (mA) 100 40 VBE(sat) — IC Base to emitter saturation voltage VBE(sat) (V) 120 Collector to emitter saturation voltage VCE(sat) (V) IC — VCE 20 Ambient temperature Ta (˚C) IE=0 f=1MHz Ta=25˚C 5 4 3 2 1 0 –3 –10 –30 –100 –300 –1000 Emitter current IE (mA) 1 3 10 30 100 Collector to base voltage VCB (V)