Transistor 2SD1478, 2SD1478A Silicon NPN epitaxial planer type darlington Unit: mm For low-frequency amplification +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 Symbol Collector to 2SD1478 base voltage 2SD1478A Collector to 2SD1478 Ratings 30 VCBO Unit 25 V 50 Emitter to base voltage VEBO 5 V Peak collector current ICP 750 mA Collector current IC 500 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics Parameter 1.45 0.95 0.95 1.9±0.2 +0.1 0.4 –0.05 +0.1 0.16 –0.06 0.1 to 0.3 0.4±0.2 V 60 VCEO emitter voltage 2SD1478A +0.2 (Ta=25˚C) 0 to 0.1 Parameter 3 0.8 ■ Absolute Maximum Ratings 1 2 +0.2 ● Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer bammer: hFE = 4000 to 20000. A shunt resistor is omitted from the driver. 1.1 –0.1 ● 2.9 –0.05 ■ Features 1:Base 2:Emitter 3:Collector JEDEC:TO–236 EIAJ:SC–59 Mini Type Package Marking symbol : 2N(2SD1478) 2O(2SD1478A) Internal Connection C B E (Ta=25˚C) Conditions Symbol min typ max Unit Collector cutoff current ICBO VCB = 25V, IE = 0 100 nA Emitter cutoff current IEBO VEB = 4V, IC = 0 100 nA VCBO IC = 100µA, IE = 0 Collector to base 2SD1478 voltage 2SD1478A Collector to emitter 2SD1478 voltage 2SD1478A VCEO 30 V 60 IC = 1mA, IB = 0 25 IC = 1mA, IB = 0 50 V Emitter to base voltage VEBO IE = 100µA, IC = 0 Forward current transfer ratio hFE*1 VCE = 10V, IC = 500mA*2 Collector to emitter saturation voltage VCE(sat) IC = 500mA, IB = 0.5mA*2 2.5 V Base to emitter voltage VBE(sat) IC = 500mA, IB = 0.5mA*2 3.0 V Transition frequency fT VCB = 10V, IE = –50mA, f = 200MHz *1h FE1 hFE1 Marking Symbol V 20000 200 MHz *2 Rank classification Rank 5 4000 Q Pulse measurement R 4000 ~ 10000 8000 ~ 20000 2SD1478 2NQ 2NR 2SD1478A 2OQ 2OR 1 Transistor 2SD1478, 2SD1478A IC — VCE Collector current IC (mA) 160 120 80 IB=50µA 45µA 100 40µA 30 35µA 10 30µA 25µA 20µA 15µA 10µA 3 1 40 5µA 0.3 0 40 80 120 160 0.1 0.1 200 Ambient temperature Ta (˚C) 0.3 Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 10 25˚C Ta=–25˚C 75˚C 0.3 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 30 100 IC/IB=1000 30 10 3 25˚C –25˚C 0.3 0.1 0.03 0.01 0.01 0.03 0.1 3 Collector current IC (A) 10 25˚C 6 Ta=75˚C –25˚C 103 102 10 0.01 0.03 0.3 1 3 10 Collector current IC (A) Cob — VCB VCE=10V 104 Ta=75˚C 1 hFE — IC IC/IB=1000 1 10 105 30 3 3 100 Collector to emitter voltage VCE (V) VBE(sat) — IC 100 1 Collector output capacitance Cob (pF) Collector power dissipation PC (mW) Ta=25˚C 300 200 0 2 VCE(sat) — IC 1000 Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 240 IE=0 f=1MHz Ta=25˚C 5 4 3 2 1 0 0.1 0.3 1 3 Collector current IC (A) 10 1 3 10 30 100 Collector to base voltage VCB (V)