Transistor 2SD2321 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm 3.0±0.2 4.0±0.2 ■ Features marking ■ Absolute Maximum Ratings (Ta=25˚C) 1 Parameter Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 7 V Collector current IC 5 A Peak collector current ICP 8 A Collector power dissipation PC 400 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics 3 1.27 1.27 2.54±0.15 1:Emitter 2:Collector 3:Base EIAJ:SC–72 New S Type Package (Ta=25˚C) Parameter Symbol Collector cutoff current 2 Conditions min typ VCB = 10V, IE = 0 0.1 µA VCE = 10V, IB = 0 1.0 µA 0.1 µA IEBO VEB = 7V, IC = 0 VCEO IC = 1mA, IB = 0 Emitter to base voltage VEBO IE = 10µA, IC = 0 hFE1*1 VCE = 2V, IC = 0.5A*2 230 hFE2 VCE = 2V, IC = 2A*2 150 Collector to emitter saturation voltage VCE(sat) IC = 3A, IB = 0.1A*2 0.28 Transition frequency fT VCB = 6V, IE = –50mA, f = 200MHz 150 Collector output capacitance Cob VCB = 20V, IE = 0, f = 1MHz 26 20 V 7 V 600 1.0 V MHz 50 *2 FE1 Unit ICEO Collector to emitter voltage *1h max ICBO Emitter cutoff current Forward current transfer ratio 2.0±0.2 15.6±0.5 Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. 0.7±0.1 ● +0.2 0.45–0.1 ● pF Pulse measurement Rank classification Rank Q R hFE1 230 ~ 380 340 ~ 600 1 2SD2321 Transistor PC — Ta IC — VCE 6 IB=7mA 300 200 100 6mA 1.6 5mA 4mA 1.2 3mA 0.8 2mA 0.4 60 80 100 120 140 160 0.4 1 Ta=75˚C 25˚C –25˚C 0.03 0.01 0.003 0.001 0.01 0.03 0.1 0.3 1 0.8 1.2 1.6 2.0 2.4 0 3 30 10 3 25˚C Ta=–25˚C 1 75˚C 0.3 0.1 0.03 0.01 0.01 0.03 10 0.1 0.3 fT — IE 1 3 250 200 150 100 50 –3 Emitter current IE (A) 400 25˚C 300 –25˚C 200 100 –10 0.1 0.3 1 3 10 Area of safe operation (ASO) IE=0 f=1MHz Ta=25˚C 80 60 40 Single pulse Ta=25˚C 30 10 ICP 3 IC t=10ms t=1s 1 0.3 0.1 20 0.03 0 –1 Ta=75˚C 100 Collector current IC (A) Collector output capacitance Cob (pF) 300 2.0 Collector current IC (A) Cob — VCB 350 1.6 500 0 0.01 0.03 10 100 VCB=6V Ta=25˚C 1.2 VCE=2V Collector current IC (A) 400 0.8 600 IC/IB=30 Collector current IC (A) 0 – 0.01 – 0.03 – 0.1 – 0.3 0.4 Base to emitter voltage VBE (V) hFE — IC 100 Base to emitter saturation voltage VBE(sat) (V) 3 0.1 2 VBE(sat) — IC IC/IB=30 0.3 25˚C 3 Collector to emitter voltage VCE (V) VCE(sat) — IC 10 –25˚C 0 0 Forward current transfer ratio hFE 40 Ta=75˚C 4 1 1mA 0 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) 5 Collector current IC (A) 2.0 400 0 Transition frequency fT (MHz) VCE=2V Ta=25˚C 0 2 IC — VBE 2.4 Collector current IC (A) Collector power dissipation PC (mW) 500 1 3 10 30 100 Collector to base voltage VCB (V) 0.01 0.1 0.3 1 3 10 30 100 Collector to emitter voltage VCE (V)