Transistor 2SD1302 Silicon NPN epitaxial planer type For low-voltage output amplification For muting For DC-DC converter Unit: mm ■ Features ● Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE. ■ Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 12 V Peak collector current ICP 1 A Collector current IC 0.5 A Collector power dissipation PC 600 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics +0.2 +0.2 0.45 –0.1 0.45 –0.1 1.27 1.27 2.3±0.2 ● 13.5±0.5 ● 4.0±0.2 5.1±0.2 5.0±0.2 1 2 3 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A (Ta=25˚C) Parameter Symbol Conditions min typ VCB = 25V, IE = 0 max Unit 100 nA Collector cutoff current ICBO Collector to base voltage VCBO IC = 10µA, IE = 0 25 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 20 V Emitter to base voltage VEBO IE = 10µA, IC = 0 12 hFE1*1 VCE = 2V, IC = 0.5A*2 200 hFE2 VCE = 2V, IC = 1A*2 60 Collector to emitter saturation voltage VCE(sat) IC = 0.5A, IB = 20mA Base to emitter saturation voltage VBE(sat) IC = 0.5A, IB = 50mA Transition frequency fT VCB = 10V, IE = –50mA, f = 200MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz ON resistanse Ron*3 Forward current transfer ratio V 800 0.13 0.4 1.2 MHz 10 pF Ω 1.0 FE1 *3R on Rank classification V 200 *2 *1h V Pulse measurement Measurement circuit 1kΩ Rank R S T hFE1 200 ~ 350 300 ~ 500 400 ~ 800 IB=1mA VB Ron= VV VA f=1kHz V=0.3V VB ✕1000(Ω) VA–VB 1 Transistor 2SD1302 PC — Ta IC — VCE 700 500 400 300 200 3.0mA 0.8 2.5mA 2.0mA 0.6 1.5mA 0.4 1.0mA 0.5mA 0.2 100 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 1 2 4 5 6 30 25˚C Ta=–25˚C 75˚C 0.3 0.1 0.03 0.1 0.3 1 3 800 Ta=75˚C 600 25˚C –25˚C 400 200 0.1 0.3 1 3 10 Collector current IC (A) 1000 8 Ron measuring circuit IB=1mA 300 ON resistance Ron (Ω) 12 VB 100 V 30 VA f=1kHz V=0.3V 10 3 1 4 0.3 0 10 25˚C 0.1 –25˚C 0.03 0.01 0.01 0.03 30 100 Collector to base voltage VCB (V) 0.1 0.3 1 3 10 VCB=10V Ta=25˚C 350 300 250 200 150 100 0.1 0.01 0.03 0.1 0.3 1 3 Base current IB (mA) 0 –1 –3 –10 –30 Emitter current IE (mA) Ron — IB 16 3 Ta=75˚C 0.3 50 0 0.01 0.03 10 IE=0 Ta=25˚C f=1MHz 1 1 400 Cob — VCB 20 3 VCE=2V Collector current IC (A) 24 10 fT — I E 1000 10 0.01 0.01 0.03 30 Collector current IC (A) 1200 Forward current transfer ratio hFE IC/IB=10 1 IC/IB=25 hFE — IC 100 3 100 Collector to emitter voltage VCE (V) VBE(sat) — IC Base to emitter saturation voltage VBE(sat) (V) 3 Transition frequency fT (MHz) 0 Collector output capacitance Cob (pF) Ta=25˚C 3.5mA 1.0 600 Collector to emitter saturation voltage VCE(sat) (V) IB=4.0mA 0 2 VCE(sat) — IC 1.2 Collector current IC (A) Collector power dissipation PC (mW) 800 10 –100