Power Transistors 2SC5931 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV, CRT monitor Unit: mm (23.4) (4.5) (2.0) (1.2) 26.5±0.5 • High breakdown voltage: VCBO ≥ 1 700 V • High speed switching: tf < 200 ns • Wide safe operation area 5˚ Unit Collector-base voltage (Emitter open) VCBO 1 700 V Collector-emitter voltage (E-B short) VCES 1 700 V Collector-emitter voltage (Base open) VCEO 600 V Emitter-base voltage (Collector open) VEBO 7 V Base current IB 7.5 A Collector current IC 15 A Peak collector current * ICP 25 A Collector power dissipation PC 60 W 0.7±0.1 5.45±0.3 10.9±0.5 5˚ 1 2 5.5±0.3 Rating 5˚ 1.1±0.1 3 1: Base 2: Collector 3: Emitter EIAJ: SC-94 TOP-3E-A1 Package (2.0) Symbol 3.3±0.3 Parameter 5˚ (4.0) 2.0±0.2 18.6±0.5 (2.0) Solder Dip ■ Absolute Maximum Ratings TC = 25°C Ta = 25°C 5˚ (10.0) ■ Features 3.0±0.3 5˚ φ 3.2±0.1 22.0±0.5 15.5±0.5 Marking Symbol: C5931 Internal Connection 3 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C C B Note) *: Non-repetitive peak collector current E ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Symbol Collector-base cutoff current (Emitter open) ICBO Conditions Min Typ Max Unit VCB = 1 000 V, IE = 0 50 µA VCB = 1 700 V, IE = 0 1 mA 50 µA 10 Emitter-base cutoff current (Collector open) IEBO VEB = 7 V, IC = 0 Forward current transfer ratio hFE VCE = 5 V, IC = 7.5 A Collector-emitter saturation voltage VCE(sat) IC = 7.5 A, IB = 1.88 A 3 V Base-emitter saturation voltage VBE(sat) IC = 7.5 A, IB = 1.88 A 1.5 V 5 Transition frequency fT VCE = 10 V, IC = 0.1 A, f = 0.5 MHz Storage time tstg IC = 7.5 A, Resistance loaded 2.7 µs IB1 = 1.88 A, IB2 = −3.75 A 0.2 µs Fall time tf 3 MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: March 2004 SJD00314AED 1 2SC5931 PC Ta Safe operation area 100 (1) TC = Ta (2) With a 100 × 100 × 2 mm Al heat sink (3) Without heat sink 80 10 70 60 50 (1) 40 30 DC 1 10−1 fH = 64 kHz, TC < 90°C A.S.O for a single pulse load caused by EHT flash over during horizontal operation. 30 25 20 15 10 5 (2) (3) 0 IC 35 10−2 20 10 0 25 50 75 100 125 Ambient temperature Ta (°C) 2 ICP Collector current IC (A) Collector power dissipation PC (W) 90 Safe operation area (Horizontal operation) Non repetitive pulse, TC = 25°C t = 100 µs t= t= 10 ms 1 ms Collector current IC (A) 100 150 10−3 1 10 100 1 000 Collector-emitter voltage VCE (V) SJD00314AED 0 < 1 mA 0 500 1 000 1 500 2 000 Collector-emitter voltage VCE (V) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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