Power Transistors 2SA2074 Silicon PNP epitaxial planar type Unit: mm Power supply for Audio & Visual equipments such as TVs and VCRs Industrial equipments such as DC-DC converters 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 15.0±0.5 φ 3.2±0.1 ■ Features 13.7±0.2 4.2±0.2 Solder Dip • High-speed switching (tstg: storage time/tf: fall time is short) • Low collector-emitter saturation voltage VCE(sat) • Superior forward current transfer ratio hFE linearity • TO-220D built-in: Excellent package with withstand voltage 5 kV guaranteed 1.4±0.2 1.6±0.2 0.8±0.1 1 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −80 V Collector-emitter voltage (Base open) VCEO −80 V Emitter-base voltage (Collector open) VEBO −6 V Collector current IC −3 A Peak collector current ICP −5 A PC 15 W TC = 25°C Ta = 25°C 0.55±0.15 2.54±0.30 5.08±0.50 ■ Absolute Maximum Ratings TC = 25°C Collector power dissipation 2.6±0.1 2 1: Base 2: Collector 3: Emitter TO-220D-A1 Package 3 Marking Symbol: A2074 Internal Connection 2 C B Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C E ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Symbol Collector-emitter voltage (Base open) VCEO IC = −10 mA, IB = 0 Collector-base cutoff current (Emitter open) ICBO VCB = −80 V, IE = 0 −100 µA Collector-emitter cutoff current (Base open) ICEO VCE = −80 V, IB = 0 −100 µA hFE1 VCE = −4 V, IC = −1 A 80 250 hFE2 VCE = −4 V, IC = −3 A 30 Forward current transfer ratio Collector-emitter saturation voltage VCE(sat) Conditions Min Typ Max −80 Unit V IC = −3 A, IB = − 0.375 A −1.0 V fT VCE = −10 V, IC = − 0.1 A, f = 10 MHz 100 Turn-on time ton IC = −1 A, Resistance loaded 0.2 µs Storage time tstg IB1 = − 0.1 A, IB2 = 0.1 A 0.7 µs VCC = −50 V 0.1 µs Transition frequency Fall time tf MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: December 2002 SJD00293BED 1 2SA2074 PC Ta 35 Safe operation area −100 (1) TC = Ta (2) Without heat sink Non repetitive pulse TC = 25˚C Collector current IC (A) Collector power dissipation PC (W) 30 25 20 (1) 15 10 ICP IC −1 10 ms t = 1 ms − 0.1 t=1s 5 0 −10 (2) 0 20 40 60 − 0.01 −1 80 100 120 140 160 Ambient temperature Ta (°C) −10 −100 −1 000 Collector-emitter voltage VCE (V) Rth t Thermal resistance Rth (°C/W) 1 000 Ta = 25°C (1) Without heat sink (2) With a 100 × 100 × 2 mm AL heat sink 100 (1) (2) 10 1 0.1 0.001 0.01 0.1 1 10 100 Time t (s) 2 SJD00293BED 1 000 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL