PANASONIC 2SC3824A

Power Transistors
2SC3824, 2SC3824A
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
3.0±0.2
2.0±0.2
2.5±0.2
(1.0)
12.6±0.3
7.2±0.3
• High-speed switching
• High collector-base voltage (Emitter open) VCBO
• I type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment
1.1±0.1
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
900
V
Collector-emitter voltage (E-B short)
VCES
900
V
Collector-emitter voltage 2SC3824
(Base open)
2SC3824A
VCEO
800
V
Emitter-base voltage (Collector open)
VEBO
7
V
Collector current
IC
1
A
Peak collector current
ICP
2
A
15
W
Collector power
PC
0.9±0.1
0˚ to 0.15˚
2.3±0.2
4.6±0.4
1
2
3
1: Base
2: Collector
3: Emitter
I-G1 Package
900
Ta = 25°C
dissipation
0.75±0.1 0.4±0.1
1.0±0.2
■ Absolute Maximum Ratings TC = 25°C
0˚ to 0.15˚
(1.0)
■ Features
3.5±0.2
2.5±0.2
7.0±0.3
Note) Self-supported type package is also prepared.
1.3
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Collector-emitter voltage
(Base open)
Symbol
2SC3824
VCEO
Conditions
IC = 1 mA, IB = 0
2SC3824A
Min
Typ
Max
800
Unit
V
900
Collector-base cutoff current (Emitter open)
ICBO
VCB = 900 V, IE = 0
50
µA
Emitter-base cutoff current (Collector open)
IEBO
VEB = 7 V, IC = 0
50
µA
hFE1
VCE = 5 V, IC = 0.05 A
6
hFE2
VCE = 5 V, IC = 0.5 A
3
Collector-emitter saturation voltage
VCE(sat)
IC = 0.2 A, IB = 0.04 A
1.5
V
Base-emitter saturation voltage
VBE(sat)
IC = 0.2 A, IB = 0.04 A
1.0
V
Forward current transfer ratio

Transition frequency
fT
VCE = 10 V, IC = 0.05 A, f = 1 MHz
Turn-on time
ton
IC = 0.2 A
1.0
µs
Storage time
tstg
IB1 = 0.04 A, IB2 = − 0.08 A
3.0
µs
VCC = 250 V
1.0
µs
Fall time
tf
4
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: March 2003
SJD00113AED
1
2SC3824, 2SC3824A
PC  Ta
IC  VCE
20
IB=200mA
1.0
(1)
Collector current IC (A)
15
10
5
0.8
100mA
90mA
80mA
70mA
60mA
50mA
0.6
40mA
30mA
0.4
20mA
0.2
10mA
(2)
0
Collector-emitter saturation voltage VCE(sat) (V)
TC=25˚C
(1)TC=Ta
(3)Without heat sink
(PC=1.3W)
Collector power dissipation PC (W)
VCE(sat)  IC
1.2
0
0
40
80
120
160
0
2
4
6
8
10
12
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
VBE(sat)  IC
hFE  IC
TC=100˚C
IC/IB=5
25˚C
1
–25˚C
0.1
0.01
0.01
0.1
1
Collector current IC (A)
fT  I C
1 000
Forward current transfer ratio hFE
TC=–25˚C
100˚C
0.1
0.01
0.01
0.1
25˚C
TC=100˚C
10
–25˚C
1
0.1
0.01
1
0.1
ton
tf
0.1
0.2
0.4
0.6
0.8
Collector current IC (A)
1.0
t=10ms
IC
1
t=1ms
t=300ms
10−1
10−2
10−3
0.01
0
2
ICP
tstg
1
Non repetitive pulse
TC=25˚C
2SC3824A
2SC3824
10
1
10
100
1 000
Collector-emitter voltage VCE (V)
SJD00113AED
10
1
10−2
10−1
Collector current IC (A)
Safe operation area
10
Pulsed tw=1ms
Duty cycle=1%
IC/IB=5
(2IB1=–IB2)
VCC=250V
TC=25˚C
Collector current IC (A)
Turn-on time ton , Storage time tstg , Fall time tf (µs)
ton , tstg , tf  IC
100
0.1
10−3
1
Collector current IC (A)
Collector current IC (A)
100
Transition frequency fT (MHz)
Base-emitter saturation voltage VBE(sat) (V)
100
25˚C
1
VCE=10V
f=1MHz
TC=25˚C
VCE=5V
IC/IB=5
1
2SC3824, 2SC3824A
Safe operation area (Reverse bias)
Safe operation area (Reverse bias) measurement circuit
4
Collector current IC (A)
L=100µH
IC/IB=5
(2IB1=–IB2)
TC=25˚C
L
3
IB1
ICP
2
−IB2
VIN
IC
VCC
IC
1
VCLAMP
tw
0
T.U.T
0
400
800
1200
1600
Collector-emitter voltage VCE (V)
Rth  t
Thermal resistance Rth (°C/W)
103
(1)Without heat sink
(2)With a 50×50×2mm Al heat sink
(1)
102
(2)
10
1
10−1
10−3
10−2
10−1
1
10
102
103
Time t (s)
SJD00113AED
3
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
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product or technologies as described in this material.
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electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
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• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
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2002 JUL