Power Transistors 2SC3824, 2SC3824A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 3.0±0.2 2.0±0.2 2.5±0.2 (1.0) 12.6±0.3 7.2±0.3 • High-speed switching • High collector-base voltage (Emitter open) VCBO • I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment 1.1±0.1 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 900 V Collector-emitter voltage (E-B short) VCES 900 V Collector-emitter voltage 2SC3824 (Base open) 2SC3824A VCEO 800 V Emitter-base voltage (Collector open) VEBO 7 V Collector current IC 1 A Peak collector current ICP 2 A 15 W Collector power PC 0.9±0.1 0˚ to 0.15˚ 2.3±0.2 4.6±0.4 1 2 3 1: Base 2: Collector 3: Emitter I-G1 Package 900 Ta = 25°C dissipation 0.75±0.1 0.4±0.1 1.0±0.2 ■ Absolute Maximum Ratings TC = 25°C 0˚ to 0.15˚ (1.0) ■ Features 3.5±0.2 2.5±0.2 7.0±0.3 Note) Self-supported type package is also prepared. 1.3 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Symbol 2SC3824 VCEO Conditions IC = 1 mA, IB = 0 2SC3824A Min Typ Max 800 Unit V 900 Collector-base cutoff current (Emitter open) ICBO VCB = 900 V, IE = 0 50 µA Emitter-base cutoff current (Collector open) IEBO VEB = 7 V, IC = 0 50 µA hFE1 VCE = 5 V, IC = 0.05 A 6 hFE2 VCE = 5 V, IC = 0.5 A 3 Collector-emitter saturation voltage VCE(sat) IC = 0.2 A, IB = 0.04 A 1.5 V Base-emitter saturation voltage VBE(sat) IC = 0.2 A, IB = 0.04 A 1.0 V Forward current transfer ratio Transition frequency fT VCE = 10 V, IC = 0.05 A, f = 1 MHz Turn-on time ton IC = 0.2 A 1.0 µs Storage time tstg IB1 = 0.04 A, IB2 = − 0.08 A 3.0 µs VCC = 250 V 1.0 µs Fall time tf 4 MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: March 2003 SJD00113AED 1 2SC3824, 2SC3824A PC Ta IC VCE 20 IB=200mA 1.0 (1) Collector current IC (A) 15 10 5 0.8 100mA 90mA 80mA 70mA 60mA 50mA 0.6 40mA 30mA 0.4 20mA 0.2 10mA (2) 0 Collector-emitter saturation voltage VCE(sat) (V) TC=25˚C (1)TC=Ta (3)Without heat sink (PC=1.3W) Collector power dissipation PC (W) VCE(sat) IC 1.2 0 0 40 80 120 160 0 2 4 6 8 10 12 Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) VBE(sat) IC hFE IC TC=100˚C IC/IB=5 25˚C 1 –25˚C 0.1 0.01 0.01 0.1 1 Collector current IC (A) fT I C 1 000 Forward current transfer ratio hFE TC=–25˚C 100˚C 0.1 0.01 0.01 0.1 25˚C TC=100˚C 10 –25˚C 1 0.1 0.01 1 0.1 ton tf 0.1 0.2 0.4 0.6 0.8 Collector current IC (A) 1.0 t=10ms IC 1 t=1ms t=300ms 10−1 10−2 10−3 0.01 0 2 ICP tstg 1 Non repetitive pulse TC=25˚C 2SC3824A 2SC3824 10 1 10 100 1 000 Collector-emitter voltage VCE (V) SJD00113AED 10 1 10−2 10−1 Collector current IC (A) Safe operation area 10 Pulsed tw=1ms Duty cycle=1% IC/IB=5 (2IB1=–IB2) VCC=250V TC=25˚C Collector current IC (A) Turn-on time ton , Storage time tstg , Fall time tf (µs) ton , tstg , tf IC 100 0.1 10−3 1 Collector current IC (A) Collector current IC (A) 100 Transition frequency fT (MHz) Base-emitter saturation voltage VBE(sat) (V) 100 25˚C 1 VCE=10V f=1MHz TC=25˚C VCE=5V IC/IB=5 1 2SC3824, 2SC3824A Safe operation area (Reverse bias) Safe operation area (Reverse bias) measurement circuit 4 Collector current IC (A) L=100µH IC/IB=5 (2IB1=–IB2) TC=25˚C L 3 IB1 ICP 2 −IB2 VIN IC VCC IC 1 VCLAMP tw 0 T.U.T 0 400 800 1200 1600 Collector-emitter voltage VCE (V) Rth t Thermal resistance Rth (°C/W) 103 (1)Without heat sink (2)With a 50×50×2mm Al heat sink (1) 102 (2) 10 1 10−1 10−3 10−2 10−1 1 10 102 103 Time t (s) SJD00113AED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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