Datasheet

AON6278
80V N-Channel MOSFET
General Description
Product Summary
VDS
The AON6278 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an
extremely low combination of RDS(ON), Ciss and Coss.
This device is ideal for boost converters and synchronous
rectifiers for consumer, telecom, industrial power supplies
and LED backlighting.
80V
85A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 3.3mΩ
RDS(ON) (at VGS=6V)
< 4.6mΩ
100% UIS Tested
100% Rg Tested
DFN5X6
Top View
D
Top View
Bottom View
1
8
2
7
3
6
4
5
G
S
PIN1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current C
Avalanche Current
C
Avalanche energy L=0.1mH C
TC=25°C
Power Dissipation B
TA=25°C
Power Dissipation
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Rev.2.0: March 2014
IAS
60
A
EAS
180
mJ
208
Steady-State
Steady-State
W
83
7.4
RθJA
RθJC
W
4.7
TJ, TSTG
Symbol
t ≤ 10s
A
27
PDSM
TA=70°C
A
34
PD
TC=100°C
V
260
IDSM
TA=70°C
±20
66
IDM
TA=25°C
Continuous Drain
Current
Units
V
85
ID
TC=100°C
Maximum
80
-55 to 150
Typ
14
40
0.46
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°C
Max
17
55
0.6
Units
°C/W
°C/W
°C/W
Page 1 of 6
AON6278
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=20A
TJ=125°C
VGS=6V, ID=20A
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current G
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=40V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
VGS=10V, VDS=40V, ID=20A
µA
5
2.3
0.3
Units
V
1
TJ=55°C
VDS=5V, ID=20A
Max
80
VDS=80V, VGS=0V
IDSS
Coss
Typ
2.75
±100
nA
3.3
V
2.75
3.3
4.7
5.7
3.5
4.6
mΩ
1
V
85
A
90
0.7
mΩ
S
4646
pF
632
pF
31
pF
0.65
1.0
Ω
61.5
86
nC
Qgs
Gate Source Charge
17
nC
Qgd
Gate Drain Charge
9.5
nC
tD(on)
Turn-On DelayTime
13
ns
tr
Turn-On Rise Time
6
ns
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
VGS=10V, VDS=40V, RL=2Ω,
RGEN=3Ω
36
ns
7
ns
IF=20A, dI/dt=500A/µs
32
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
174
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.2.0: March 2014
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Page 2 of 6
AON6278
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
80
6V
VDS=5V
10V
60
60
5V
40
ID(A)
ID (A)
4V
40
125°C
20
20
VGS=3.5V
25°C
0
0
0
1
2
3
4
0
5
5
2
3
4
5
6
Normalized On-Resistance
2
4
RDS(ON) (mΩ)
1
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=6V
3
VGS=10V
2
1
1.8
VGS=10V
ID=20A
1.6
1.4
1.2
VGS=6V
ID=20A
17
5
2
10
1
0.8
0
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
Temperature (°C) 0
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
10
1.0E+02
ID=20A
1.0E+01
8
40
125°C
6
IS (A)
RDS(ON) (mΩ)
1.0E+00
4
125°C
1.0E-01
1.0E-02
1.0E-03
2
25°C
25°C
1.0E-04
1.0E-05
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.2.0: March 2014
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AON6278
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
6000
VDS=40V
ID=20A
Capacitance (pF)
VGS (Volts)
Ciss
5000
8
6
4
4000
3000
2000
Coss
2
1000
Crss
0
0
0
10
20
30
40
50
60
70
0
10
Qg (nC)
Figure 7: Gate-Charge Characteristics
40
50
60
70
80
1000
10µs
10.0
DC
1.0
100µs
1ms
10ms
TJ(Max)=150°C
TC=25°C
0.1
0.0
0.01
TJ(Max)=150°C
TC=25°C
800
10µs
RDS(ON)
limited
Power (W)
ID (Amps)
30
VDS (Volts)
Figure 8: Capacitance Characteristics
1000.0
100.0
20
0.1
17
5
2
10
600
400
200
1
10
100
1000
0
0.0001
0.001
0.01
0.1
1
10
100
0
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-to-Case
VDS (Volts)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
(Note F)
ZθJC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=0.6°C/W
1
0.1
PD
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.2.0: March 2014
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Page 4 of 6
AON6278
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
250
100
Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000
TA=100°C
TA=25°C
TA=150°C
TA=125°C
10
1
200
150
100
50
0
1
10
100
1000
0
25
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
75
100
125
150
TCASE (°C)
Figure 13: Power De-rating (Note F)
10000
100
TA=25°C
80
1000
Power (W)
Current rating ID(A)
50
60
40
17
5
2
10
100
10
20
1
1E-05
0
0
25
50
75
100
125
150
TCASE (°C)
Figure 14: Current De-rating (Note F)
0.001
0.1
100
1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
ZθJA Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
40
RθJA=55°C/W
0.1
PD
0.01
Ton
Single Pulse
0.001
0.0001
0.001
0.01
T
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.2.0: March 2014
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Page 5 of 6
AON6278
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev.2.0: March 2014
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6