AON6278 80V N-Channel MOSFET General Description Product Summary VDS The AON6278 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. 80V 85A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 3.3mΩ RDS(ON) (at VGS=6V) < 4.6mΩ 100% UIS Tested 100% Rg Tested DFN5X6 Top View D Top View Bottom View 1 8 2 7 3 6 4 5 G S PIN1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.2.0: March 2014 IAS 60 A EAS 180 mJ 208 Steady-State Steady-State W 83 7.4 RθJA RθJC W 4.7 TJ, TSTG Symbol t ≤ 10s A 27 PDSM TA=70°C A 34 PD TC=100°C V 260 IDSM TA=70°C ±20 66 IDM TA=25°C Continuous Drain Current Units V 85 ID TC=100°C Maximum 80 -55 to 150 Typ 14 40 0.46 www.aosmd.com °C Max 17 55 0.6 Units °C/W °C/W °C/W Page 1 of 6 AON6278 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A TJ=125°C VGS=6V, ID=20A gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=40V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge VGS=10V, VDS=40V, ID=20A µA 5 2.3 0.3 Units V 1 TJ=55°C VDS=5V, ID=20A Max 80 VDS=80V, VGS=0V IDSS Coss Typ 2.75 ±100 nA 3.3 V 2.75 3.3 4.7 5.7 3.5 4.6 mΩ 1 V 85 A 90 0.7 mΩ S 4646 pF 632 pF 31 pF 0.65 1.0 Ω 61.5 86 nC Qgs Gate Source Charge 17 nC Qgd Gate Drain Charge 9.5 nC tD(on) Turn-On DelayTime 13 ns tr Turn-On Rise Time 6 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr VGS=10V, VDS=40V, RL=2Ω, RGEN=3Ω 36 ns 7 ns IF=20A, dI/dt=500A/µs 32 Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 174 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.2.0: March 2014 www.aosmd.com Page 2 of 6 AON6278 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 80 6V VDS=5V 10V 60 60 5V 40 ID(A) ID (A) 4V 40 125°C 20 20 VGS=3.5V 25°C 0 0 0 1 2 3 4 0 5 5 2 3 4 5 6 Normalized On-Resistance 2 4 RDS(ON) (mΩ) 1 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=6V 3 VGS=10V 2 1 1.8 VGS=10V ID=20A 1.6 1.4 1.2 VGS=6V ID=20A 17 5 2 10 1 0.8 0 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 10 1.0E+02 ID=20A 1.0E+01 8 40 125°C 6 IS (A) RDS(ON) (mΩ) 1.0E+00 4 125°C 1.0E-01 1.0E-02 1.0E-03 2 25°C 25°C 1.0E-04 1.0E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.2.0: March 2014 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AON6278 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 6000 VDS=40V ID=20A Capacitance (pF) VGS (Volts) Ciss 5000 8 6 4 4000 3000 2000 Coss 2 1000 Crss 0 0 0 10 20 30 40 50 60 70 0 10 Qg (nC) Figure 7: Gate-Charge Characteristics 40 50 60 70 80 1000 10µs 10.0 DC 1.0 100µs 1ms 10ms TJ(Max)=150°C TC=25°C 0.1 0.0 0.01 TJ(Max)=150°C TC=25°C 800 10µs RDS(ON) limited Power (W) ID (Amps) 30 VDS (Volts) Figure 8: Capacitance Characteristics 1000.0 100.0 20 0.1 17 5 2 10 600 400 200 1 10 100 1000 0 0.0001 0.001 0.01 0.1 1 10 100 0 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-to-Case VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) (Note F) ZθJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=0.6°C/W 1 0.1 PD Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.2.0: March 2014 www.aosmd.com Page 4 of 6 AON6278 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 250 100 Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 TA=100°C TA=25°C TA=150°C TA=125°C 10 1 200 150 100 50 0 1 10 100 1000 0 25 Time in avalanche, tA (µs) Figure 12: Single Pulse Avalanche capability (Note C) 75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note F) 10000 100 TA=25°C 80 1000 Power (W) Current rating ID(A) 50 60 40 17 5 2 10 100 10 20 1 1E-05 0 0 25 50 75 100 125 150 TCASE (°C) Figure 14: Current De-rating (Note F) 0.001 0.1 100 1000 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) ZθJA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 40 RθJA=55°C/W 0.1 PD 0.01 Ton Single Pulse 0.001 0.0001 0.001 0.01 T 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev.2.0: March 2014 www.aosmd.com Page 5 of 6 AON6278 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.2.0: March 2014 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6