Switching Diodes MA3J147 Silicon epitaxial planar type Unit : mm For high-speed switching circuits 2.1 ± 0.1 1.25 ± 0.1 0.425 2.0 ± 0.2 1.3 ± 0.1 0.65 0.65 ■ Features • Small S-mini type package contained two elements, allowing highdensity mounting • Two diodes are connected in series in the package Unit Reverse voltage (DC) VR 80 V Peak reverse voltage VRM 80 V IF 100 mA Forward current (DC) Single Peak forward current Single Non-repetitive peak forward surge current* Single Series + 0.1 0.15 − 0.05 Rating 3 0.9 ± 0.1 Symbol 1 2 ■ Absolute Maximum Ratings Ta = 25°C Parameter 1 : Anode 1 2 : Cathode 2 3 : Cathode 1 Anode 2 Flat S-Mini Type Package (3-pin) 65 IFM 225 Series mA 145 IFSM 500 Series 0.3 − 0 + 0.1 0.425 Marking Symbol: MS mA Internal Connection 325 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 1 3 Note) * : t = 1 s 2 ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) IR VR = 75 V 100 nA Forward voltage (DC) VF IF = 100 mA 1.2 V Reverse voltage (DC) VR IR = 100 µA Terminal capacitance Ct VR = 0 V, f = 1 MHz 2 pF Reverse recovery time* trr IF = 10 mA, VR = 6 V Irr = 0.1 · IR, RL = 100 Ω 3 ns 80 V Note) 1. Rated input/output frequency: 100 MHz 2. * : trr measuring circuit Bias Application Unit N-50BU Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 0.1 · IR IF = 10 mA VR = 6 V RL = 100 Ω 1 MA3J147 Switching Diodes IF V F VF Ta IR V R 103 105 102 104 1.6 100°C 25°C 10 − 20°C 1 10−1 1.4 Forward voltage VF (V) Ta = 150°C Reverse current IR (nA) Forward current IF (mA) Ta = 150°C 100°C 103 102 25°C 1.2 1.0 IF = 100 mA 0.8 10 mA 0.6 3 mA 0.4 10 0.2 0 0.2 0.4 0.6 0.8 1.0 1 1.2 0 Forward voltage VF (V) 20 IR Ta 100 VR = 75 V 35 V 6V 102 10 40 80 120 0 160 Ambient temperature Ta (°C) 200 80 120 0.8 0.6 0.4 0.2 20 40 60 80 200 100 Reverse voltage VR (V) 120 Ta = 25°C IF(surge) 300 tW Non repetitive 100 30 10 3 1 0.3 0.1 0 160 IF(surge) tW 1 000 1.0 0 40 Ambient temperature Ta (°C) f = 1 MHz Ta = 25°C 103 0 0 −40 120 Ct VR Terminal capacitance Ct (pF) Reverse current IR (nA) 80 1.2 104 2 60 Reverse voltage VR (V) 105 1 −40 40 Forward surge current IF(surge) (A) 10−2 0.1 0.3 1 3 10 Pulse width tW (ms) 30