Switching Diodes MA6X125 Silicon epitaxial planar type Unit : mm + 0.2 For switching circuits 2.8 − 0.3 + 0.25 + 0.2 2.9 − 0.05 1.9 ± 0.2 0.95 0.95 • Four-element contained in one package, allowing high-density mounting 5 2 4 3 V Peak reverse voltage VRM 40 V IF 100 mA Forward current (DC)* Peak forward current* IFM 200 mA Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C + 0.1 + 0.1 0.16 − 0.06 Unit 40 0.1 to 0.3 0.4 ± 0.2 0 to 0.1 Rating VR 0.8 Symbol + 0.2 Parameter 1.1 − 0.1 ■ Absolute Maximum Ratings Ta = 25°C Reverse voltage (DC) + 0.1 0.3 − 0.05 1 6 ■ Features 1.45 ± 0.1 0.65 ± 0.15 1.5 − 0.05 0.5 − 0.05 0.65 ± 0.15 1 : Cathode 1 2 : Anode 2 3 : Cathode 3 Anode 4 4 : Anode 3 5 : Cathode 4 6 : Anode 1 Cathode 2 Mini Type Package (6-pin) Note) *1 : Value for single diode Marking Symbol: M2I Internal Connection 6 1 5 2 4 3 ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ IR VR = 40 V Forward voltage (DC) VF IF = 100 mA Reverse voltage (DC) VR IR = 100 µA Ct VR = 0 V, f = 1 MHz trr1*1 IF = 10 mA, VR = 6 V 150 Irr = 0.1 · IR, RL = 100 Ω 90 Reverse current (DC) Terminal capacitance Reverse recovery time*3 trr2 *2 Max Unit 100 nA 1.2 40 V V 5 pF ns Note) 1. Rated input/output frequency: 100 MHz 2. *1 : Between pins 1 and 6, Between pins 3 and 5 *2 : Between pins 2 and 6, Between pins 3 and 4 *3 : trr measuring circuit Bias Application Unit N-50BU Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 0.1 · IR IF = 10 mA VR = 6 V RL = 100 Ω 1 MA6X125 Switching Diodes IF V F IR V R IF V F 1 000 10 1 000 Between pins 2 and 6, 3 and 4 Between pins 1 and 6, 3 and 5 Ta = 100°C 1 Ta = 150°C 10 100°C 25°C − 20°C 1 Reverse current IR (nA) 100 Forward current IF (mA) Forward current IF (mA) 100 10 1 Ta = 150°C 100°C 25°C 0.1 0.1 0.1 0.01 25°C 0.001 − 20°C Between pins 2 and 6, 3 and 4 0.01 0 0.2 0.4 0.6 0.8 1.0 0.01 1.2 0 Forward voltage VF (V) 0.2 0.4 0.6 0.8 1.0 1.2 0.000 1 0 VF Ta 40 50 60 1.6 Between pins 2 and 6, 3 and 4 Ta = 100°C 30 VF Ta 1.6 10 20 Reverse voltage VR (V) Forward voltage VF (V) IR VR 10 Between pins 1 and 6, 3 and 5 1.4 1.4 0.1 0.01 25°C 1.2 Forward voltage VF (V) Forward voltage VF (V) Reverse current IR (nA) 1 IF = 100 mA 1.0 0.8 10 mA 0.6 3 mA 0.4 1.2 IF = 100 mA 1.0 0.8 10 mA 0.6 3 mA 0.4 0.001 0.2 0.2 Between pins 1 and 6, 3 and 5 0 10 20 30 40 50 0 –40 60 0 IR Ta 10 120 160 0 −40 200 0 40 80 120 Ct VR 6V Reverse current IR (nA) 1 1V 0.1 0.01 1V 0.1 0.01 0.001 0.001 0.000 1 –40 0.000 1 −40 200 6.0 f = 1 MHz Ta = 25°C VR = 40 V 6V 160 Ambient temperature Ta (°C) Between pins 1 and 6, 3 and 5 VR = 40 V Reverse current IR (nA) 80 IR T a 10 Between pins 2 and 6, 3 and 4 1 40 Ambient temperature Ta (°C) Reverse voltage VR (V) Terminal capacitance Ct (pF) 0.000 1 5.0 4.0 3.0 2.0 Between pins 1 and 6, 3 and 5 1.0 Between pins 2 and 6, 3 and 4 0 40 80 120 160 Ambient temperature Ta (°C) 2 200 0 0 40 80 120 160 Ambient temperature Ta (°C) 200 0 10 20 30 40 50 Reverse voltage VR (V) 60 Switching Diodes MA6X125 IF(surge) tW Forward surge current IF(surge) (A) 1 000 Ta = 25°C IF(surge) 300 tW Non repetitive 100 30 10 Between pins 1 and 6, 3 and 5 3 1 Between pins 2 and 6, 3 and 4 0.3 0.1 0.03 0.1 0.3 1 3 10 30 Pulse width tW (ms) 3