Transistors 2SD0875 (2SD875) Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0767 (2SB767) Unit: mm 4.5±0.1 1.6±0.2 1 0.4±0.08 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 • Large collector power dissipation PC • High collector-emitter voltage (Base open) VCEO • Mini power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 3˚ 4.0+0.25 –0.20 ■ Features Rating Unit Collector-base voltage (Emitter open) VCBO 80 V Collector-emitter voltage (Base open) VCEO 80 V Emitter-base voltage (Collector open) VEBO 5 V Collector current IC 0.5 A Peak collector current ICP 1 A Collector power dissipation * PC 1 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0.4 max. 2.6±0.1 Symbol 0.4±0.04 3˚ ■ Absolute Maximum Ratings Ta = 25°C Parameter 2.5±0.1 1.5±0.1 45˚ 3.0±0.15 1: Base 2: Collector 3: Emitter MiniP3-F1 Package Marking Symbol: X cm2 Note) *: Printed circuit board: Copper foil area of 1 or more, and the board thickness of 1.7 mm for the collector portion ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 80 V Collector-emitter voltage (Base open) VCEO IC = 100 µA, IB = 0 80 V Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 5 Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0 Forward current transfer ratio hFE1 * VCE = 10 V, IC = 150 mA 130 hFE2 VCE = 50 V, IC = 500 mA 50 Collector-emitter saturation voltage VCE(sat) IC = 300 mA, IB = 30 mA 0.2 0.4 V Base-emitter saturation voltage VBE(sat) IC = 300 mA, IB = 30 mA 0.85 1.2 V VCB = 10 V, IE = −50 mA, f = 200 MHz 120 VCB = 10 V, IE = 0, f = 1 MHz 11 Transition frequency fT Collector output capacitance (Common base, input open circuited) Cob Conditions Min Typ Max Unit V 0.1 µA 330 100 MHz 20 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank R S hFE1 130 to 220 185 to 330 Note) The part number in the parenthesis shows conventional part number. Publication date: November 2002 SJC00198CED 1 2SD0875 IC VCE Copper plate at the collector is more than 1 cm2 in area, 1.7 mm in thickness Ta = 25°C IB = 10 mA 1.0 Collector current IC (A) 1.0 0.8 0.6 0.4 9 mA 8 mA 7 mA 6 mA 0.8 5 mA 0.6 4 mA 3 mA 0.4 2 mA 0.2 0.2 0 20 40 60 0 80 100 120 140 160 1 mA 0 Ambient temperature Ta (°C) 2 Forward current transfer ratio hFE Base-emitter saturation voltage VBE(sat) (V) 25°C Ta = −25°C 75°C 0.1 1 10 100 Ta = 75°C 200 25°C −25°C 150 100 50 0 1 000 1 10 100 −25°C 0.01 0.001 1 ICP 30 20 1 IC t=1s DC 10−1 10−2 10 10 100 10−3 0.1 1 10 100 Collector-emitter voltage VCE (V) SJC00198CED 10 100 200 1 000 VCB = 10 V Ta = 25°C 160 120 80 40 0 −1 −10 Emitter current IE (mA) Single pulse TC = 25°C 40 Collector current IC (A) Collector output capacitance C (pF) (Common base, input open circuited) ob 1 000 Safe operation area Collector-base voltage VCB (V) 2 100 Collector current IC (mA) IE = 0 f = 1 MHz Ta = 25°C 1 Ta = 75°C 25°C 0.1 fT I E 250 Cob VCB 0 1 Collector current IC (mA) VCE = 10 V Collector current IC (mA) 50 10 IC / IB = 10 hFE IC 10 0.01 8 300 IC / IB = 10 1 6 10 Collector-emitter voltage VCE (V) VBE(sat) IC 100 4 Transition frequency fT (MHz) Collector power dissipation PC (W) 1.2 0 VCE(sat) IC 1.2 Collector-emitter saturation voltage VCE(sat) (V) PC Ta 1.4 −100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL