PANASONIC 2SD0875

Transistors
2SD0875 (2SD875)
Silicon NPN epitaxial planar type
For low-frequency power amplification
Complementary to 2SB0767 (2SB767)
Unit: mm
4.5±0.1
1.6±0.2
1
0.4±0.08
3
2
0.5±0.08
1.5±0.1
1.0+0.1
–0.2
• Large collector power dissipation PC
• High collector-emitter voltage (Base open) VCEO
• Mini power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the magazine
packing.
3˚
4.0+0.25
–0.20
■ Features
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
80
V
Collector-emitter voltage (Base open)
VCEO
80
V
Emitter-base voltage (Collector open)
VEBO
5
V
Collector current
IC
0.5
A
Peak collector current
ICP
1
A
Collector power dissipation
*
PC
1
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
0.4 max.
2.6±0.1
Symbol
0.4±0.04
3˚
■ Absolute Maximum Ratings Ta = 25°C
Parameter
2.5±0.1
1.5±0.1
45˚
3.0±0.15
1: Base
2: Collector
3: Emitter
MiniP3-F1 Package
Marking Symbol: X
cm2
Note) *: Printed circuit board: Copper foil area of 1
or more, and the
board thickness of 1.7 mm for the collector portion
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Collector-base voltage (Emitter open)
VCBO
IC = 10 µA, IE = 0
80
V
Collector-emitter voltage (Base open)
VCEO
IC = 100 µA, IB = 0
80
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 µA, IC = 0
5
Collector-base cutoff current (Emitter open)
ICBO
VCB = 20 V, IE = 0
Forward current transfer ratio
hFE1 *
VCE = 10 V, IC = 150 mA
130
hFE2
VCE = 50 V, IC = 500 mA
50
Collector-emitter saturation voltage
VCE(sat)
IC = 300 mA, IB = 30 mA
0.2
0.4
V
Base-emitter saturation voltage
VBE(sat)
IC = 300 mA, IB = 30 mA
0.85
1.2
V
VCB = 10 V, IE = −50 mA, f = 200 MHz
120
VCB = 10 V, IE = 0, f = 1 MHz
11
Transition frequency
fT
Collector output capacitance
(Common base, input open circuited)
Cob
Conditions
Min
Typ
Max
Unit
V
0.1
µA
330

100
MHz
20
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
S
hFE1
130 to 220
185 to 330
Note) The part number in the parenthesis shows conventional part number.
Publication date: November 2002
SJC00198CED
1
2SD0875
IC  VCE
Copper plate at the collector
is more than 1 cm2 in area,
1.7 mm in thickness
Ta = 25°C
IB = 10 mA
1.0
Collector current IC (A)
1.0
0.8
0.6
0.4
9 mA
8 mA
7 mA
6 mA
0.8
5 mA
0.6
4 mA
3 mA
0.4
2 mA
0.2
0.2
0
20
40
60
0
80 100 120 140 160
1 mA
0
Ambient temperature Ta (°C)
2
Forward current transfer ratio hFE
Base-emitter saturation voltage VBE(sat) (V)
25°C
Ta = −25°C
75°C
0.1
1
10
100
Ta = 75°C
200
25°C
−25°C
150
100
50
0
1 000
1
10
100
−25°C
0.01
0.001
1
ICP
30
20
1
IC
t=1s
DC
10−1
10−2
10
10
100
10−3
0.1
1
10
100
Collector-emitter voltage VCE (V)
SJC00198CED
10
100
200
1 000
VCB = 10 V
Ta = 25°C
160
120
80
40
0
−1
−10
Emitter current IE (mA)
Single pulse
TC = 25°C
40
Collector current IC (A)
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
1 000
Safe operation area
Collector-base voltage VCB (V)
2
100
Collector current IC (mA)
IE = 0
f = 1 MHz
Ta = 25°C
1
Ta = 75°C
25°C
0.1
fT  I E
250
Cob  VCB
0
1
Collector current IC (mA)
VCE = 10 V
Collector current IC (mA)
50
10
IC / IB = 10
hFE  IC
10
0.01
8
300
IC / IB = 10
1
6
10
Collector-emitter voltage VCE (V)
VBE(sat)  IC
100
4
Transition frequency fT (MHz)
Collector power dissipation PC (W)
1.2
0
VCE(sat)  IC
1.2
Collector-emitter saturation voltage VCE(sat) (V)
PC  Ta
1.4
−100
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
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(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
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permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL