Transistors 2SD0592A (2SD592A) Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB0621A (2SB621A) Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 ■ Features 0.7±0.2 • Large collector power dissipation PC • Low collector-emitter saturation voltage VCE(sat) 12.9±0.5 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 60 V Collector-emitter voltage (Base open) VCEO 50 V Emitter-base voltage (Collector open) VEBO 5 V Collector current IC 1 A Peak collector current ICP 1.5 A Collector power dissipation PC 750 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0.45+0.15 –0.1 0.45+0.15 –0.1 2.5+0.6 –0.2 2.5+0.6 –0.2 1 2 3 2.3±0.2 Parameter 1: Emitter 2: Collector 3: Base TO-92-B1 Package ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 60 Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 5 V Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0 Forward current transfer ratio hFE1 * VCE = 10 V, IC = 500 mA 85 VCE = 5 V, IC = 1 A 50 Collector-emitter saturation voltage VCE(sat) IC = 500 mA, IB = 50 mA Base-emitter saturation voltage VBE(sat) hFE2 Transition frequency fT Collector output capacitance (Common base, input open circuited) Conditions Typ Max Unit V 0.1 µA 340 0.2 0.4 V IC = 500 mA, IB = 50 mA 0.85 1.20 VCB = 10 V, IE = −50 mA, f = 200 MHz 200 VCB = 10 V, IE = 0, f = 1 MHz Cob Min V MHz 20 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank Q R S hFE1 85 to 170 120 to 240 170 to 340 Note) The part number in the parenthesis shows conventional part number. Publication date: January 2003 SJC00189CED 1 2SD0592A PC Ta IC VCE 0.4 0.2 IB = 10 mA 9 mA 8 mA 7 mA 1.00 6 mA 5 mA 0.75 4 mA 3 mA 0.50 2 mA 0.25 80 120 0 160 0 2 Base-emitter saturation voltage VBE(sat) (V) Collector-emitter saturation voltage VCE(sat) (V) Ta = 75°C 25°C −25°C 0.01 1 10 2 75°C 0.1 0.01 0.01 0.1 1 160 140 120 100 80 60 40 −100 8 10 12 VCE = 10 V 500 400 300 Ta = 75°C 200 25°C −25°C 100 0 0.01 10 0.1 1 10 Collector current IC (A) VCER RBE 120 50 IE = 0 f = 1 MHz Ta = 25°C 30 20 10 1 10 Collector-base voltage VCB (V) SJC00189CED IC = 10 mA Ta = 25°C 100 40 0 6 hFE IC Ta = −25°C 1 4 Base current IB (mA) 600 25°C Collector output capacitance C (pF) (Common base, input open circuited) ob Transition frequency fT (MHz) 0 Cob VCB 20 2 0 10 10 fT I E Emitter current IE (mA) 8 Collector current IC (A) 200 V = 10 V CB T = 25°C 180 a −10 6 IC / IB = 10 Collector current IC (A) 0 −1 0.2 VBE(sat) IC 1 0.1 4 100 IC / IB = 10 0.001 0.01 0.4 Collector-emitter voltage VCE (V) VCE(sat) IC 0.1 0.6 1 mA Ambient temperature Ta (°C) 10 0.8 Forward current transfer ratio hFE 40 1.0 Collector-emitter voltage (V) V (Resistor between B and E) CER 0 VCE = 10 V Ta = 25°C Collector current IC (A) 0.6 1.2 Ta = 25°C 1.25 0.8 0 IC I B 1.50 Collector current IC (A) Collector power dissipation PC (W) 1.0 100 80 60 40 20 0 0.1 1 10 100 Base-emitter resistance RBE (kΩ) 2SD0592A ICEO Ta 104 VCE = 10 V ICEO (Ta) ICEO (Ta = 25°C) 103 102 10 1 0 40 80 120 160 Ambient temperature Ta (°C) SJC00189CED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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