PANASONIC 2SD0592A

Transistors
2SD0592A (2SD592A)
Silicon NPN epitaxial planar type
For low-frequency output amplification
Complementary to 2SB0621A (2SB621A)
Unit: mm
4.0±0.2
5.1±0.2
5.0±0.2
■ Features
0.7±0.2
• Large collector power dissipation PC
• Low collector-emitter saturation voltage VCE(sat)
12.9±0.5
0.7±0.1
■ Absolute Maximum Ratings Ta = 25°C
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
60
V
Collector-emitter voltage (Base open)
VCEO
50
V
Emitter-base voltage (Collector open)
VEBO
5
V
Collector current
IC
1
A
Peak collector current
ICP
1.5
A
Collector power dissipation
PC
750
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
0.45+0.15
–0.1
0.45+0.15
–0.1
2.5+0.6
–0.2
2.5+0.6
–0.2
1
2 3
2.3±0.2
Parameter
1: Emitter
2: Collector
3: Base
TO-92-B1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Collector-base voltage (Emitter open)
VCBO
IC = 10 µA, IE = 0
60
Collector-emitter voltage (Base open)
VCEO
IC = 2 mA, IB = 0
50
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 µA, IC = 0
5
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 20 V, IE = 0
Forward current transfer ratio
hFE1 *
VCE = 10 V, IC = 500 mA
85
VCE = 5 V, IC = 1 A
50
Collector-emitter saturation voltage
VCE(sat)
IC = 500 mA, IB = 50 mA
Base-emitter saturation voltage
VBE(sat)
hFE2
Transition frequency
fT
Collector output capacitance
(Common base, input open circuited)
Conditions
Typ
Max
Unit
V
0.1
µA
340

0.2
0.4
V
IC = 500 mA, IB = 50 mA
0.85
1.20
VCB = 10 V, IE = −50 mA, f = 200 MHz
200
VCB = 10 V, IE = 0, f = 1 MHz
Cob
Min
V
MHz
20
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
S
hFE1
85 to 170
120 to 240
170 to 340
Note) The part number in the parenthesis shows conventional part number.
Publication date: January 2003
SJC00189CED
1
2SD0592A
PC  Ta
IC  VCE
0.4
0.2
IB = 10 mA
9 mA
8 mA
7 mA
1.00
6 mA
5 mA
0.75
4 mA
3 mA
0.50
2 mA
0.25
80
120
0
160
0
2
Base-emitter saturation voltage VBE(sat) (V)
Collector-emitter saturation voltage VCE(sat) (V)
Ta = 75°C
25°C
−25°C
0.01
1
10
2
75°C
0.1
0.01
0.01
0.1
1
160
140
120
100
80
60
40
−100
8
10
12
VCE = 10 V
500
400
300
Ta = 75°C
200
25°C
−25°C
100
0
0.01
10
0.1
1
10
Collector current IC (A)
VCER  RBE
120
50
IE = 0
f = 1 MHz
Ta = 25°C
30
20
10
1
10
Collector-base voltage VCB (V)
SJC00189CED
IC = 10 mA
Ta = 25°C
100
40
0
6
hFE  IC
Ta = −25°C
1
4
Base current IB (mA)
600
25°C
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Transition frequency fT (MHz)
0
Cob  VCB
20
2
0
10
10
fT  I E
Emitter current IE (mA)
8
Collector current IC (A)
200 V = 10 V
CB
T = 25°C
180 a
−10
6
IC / IB = 10
Collector current IC (A)
0
−1
0.2
VBE(sat)  IC
1
0.1
4
100
IC / IB = 10
0.001
0.01
0.4
Collector-emitter voltage VCE (V)
VCE(sat)  IC
0.1
0.6
1 mA
Ambient temperature Ta (°C)
10
0.8
Forward current transfer ratio hFE
40
1.0
Collector-emitter voltage
(V)
V
(Resistor between B and E) CER
0
VCE = 10 V
Ta = 25°C
Collector current IC (A)
0.6
1.2
Ta = 25°C
1.25
0.8
0
IC  I B
1.50
Collector current IC (A)
Collector power dissipation PC (W)
1.0
100
80
60
40
20
0
0.1
1
10
100
Base-emitter resistance RBE (kΩ)
2SD0592A
ICEO  Ta
104
VCE = 10 V
ICEO (Ta)
ICEO (Ta = 25°C)
103
102
10
1
0
40
80
120
160
Ambient temperature Ta (°C)
SJC00189CED
3
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
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if any of the products or technologies described in this material and controlled under the "Foreign
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Consult our sales staff in advance for information on the following applications:
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the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment.
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2002 JUL