Power Transistors 2SC5902 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV Unit: mm (23.4) (4.5) (2.0) 5˚ (4.0) 2.0±0.2 18.6±0.5 (2.0) Solder Dip ■ Absolute Maximum Ratings TC = 25°C Unit Collector-base voltage (Emitter open) VCBO 1 700 V Collector-emitter voltage (E-B short) VCES 1 700 V Emitter-base voltage (Collector open) VEBO 7 V IB 3 A Collector current IC 9 A Peak collector current * ICP 14 A Collector power dissipation PC 40 W 5˚ 0.7±0.1 5.45±0.3 10.9±0.5 5˚ 1 2 5.5±0.3 Rating 5˚ 1.1±0.1 3 1: Base 2: Collector 3: Emitter EIAJ: SC-94 TOP-3E-A1 Package (2.0) Symbol 3.3±0.3 Parameter Ta = 25°C (1.2) 26.5±0.5 • High breakdown voltage: VCBO ≥ 1 700 V • Wide safe operation area • Built-in dumper diode Base current 5˚ (10.0) ■ Features 3.0±0.3 5˚ φ 3.2±0.1 22.0±0.5 15.5±0.5 Internal Connection 3 C Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C B Note) *: Non-repetitive peak collector current E ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Symbol Emitter-base voltage (Collector open) VEBO Forward voltage Collector-base cutoff current (Emitter open) VF ICBO Conditions IE = 500 mA, IC = 0 Typ Max 7 Unit V IF = 4.5 A −2 VCB = 1 000 V, IE = 0 50 µA VCB = 1 700 V, IE = 0 1 mA 10 3 V hFE VCE = 5 V, IC = 4.5 A Collector-emitter saturation voltage VCE(sat) IC = 4.5 A, IB = 1.13 A Base-emitter saturation voltage VBE(sat) IC = 4.5 A, IB = 1.13 A Forward current transfer ratio Min 5 1.5 V V Transition frequency fT VCE = 10 V, IC = 0.1 A, f = 0.5 MHz Storage time tstg IC = 4.5 A, Resistance loaded 5.0 µs Fall time tf IB1 = 1.13 A, IB2 = −2.25 A 0.5 µs 3 MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: March 2004 SJD00304AED 1 2SC5902 PC Ta Safe operation area 100 70 40 (1) 30 20 IC DC t= t= 10 ms 1 ms 1 10−1 10−2 10 fH = 15.75 kHz, TC < 90°C A.S.O for a single pulse load caused by EHT flash over during horizontal operation. One action of the device must not use in all areas. (area A, B and C) But it is able to use in two areas. (area A and B or area B and C) t = 100 µs 10 50 20 Non repetitive pulse TC = 25°C ICP 60 Safe operation area (Horizontal operation) Collector current IC (A) (1) TC = Ta (2) With a 100 × 100 × 2 mm Al heat sink (3) Without heat sink Collector current IC (A) Collector power dissipation PC (W) 80 15 10 A 5 (2) 0 0 25 50 75 100 125 Ambient temperature Ta (°C) 2 C B (3) 150 10−3 0 1 10 100 1 000 Collector-emitter voltage VCE (V) SJD00304AED < 1 mA 0 500 1 000 1 500 2 000 Collector-emitter voltage VCE (V) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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