PANASONIC 2SD2659

Power Transistors
2SD2659
Silicon NPN triple diffusion planar type
Unit: mm
For power switching
9.9±0.3
3.0±0.5
2.9±0.2
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
80
V
Collector-emitter voltage (Base open)
VCEO
60
V
Emitter-base voltage (Collector open)
VEBO
6
V
IC
3
A
Peak collector current
ICP
6
A
PC
20
W
TC = 25°C
1.4±0.2
1.6±0.2
2.6±0.1
0.8±0.1
0.55±0.15
2.54±0.30
5.08±0.50
1
Collector current
dissipation
15.0±0.5
• High forward current transfer ratio hFE
• Satisfactory linearity of forward current transfer ratio hFE
• TO-220D built-in: Excellent package with withstand voltage 5 kV
guaranteed
φ 3.2±0.1
13.7±0.2
4.2±0.2
Solder Dip
■ Features
Collector power
4.6±0.2
2
3
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
Internal Connection
C
2
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
B
E
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Collector-emitter voltage (Base open)
VCEO
IC = 10 mA, IB = 0
Collector-base cutoff current (Emitter open)
ICBO
VCB = 80 V, IE = 0
100
µA
Collector-emitter cutoff current (Base open)
ICEO
VCE = 60 V, IB = 0
100
µA
Emitter-base cutoff current (Collector open)
IEBO
VEB = 6 V, IC = 0
100
µA
Forward current transfer ratio
hFE
VCE = 4.0 V, IC = 0.5 A
1 500

VCE(sat)
IC = 2.0 A, IB = 0.05 A
Collector-emitter saturation voltage
Transition frequency
fT
Conditions
VCE = 12 V, IC = 0.2 A, f = 10 MHz
Min
Typ
Max
60
Unit
V
500
1.2
50
V
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: January 2003
SJD00292AED
1
2SD2659
PC  Ta
Safe operation area
100
Non repetitive pulse
TC = 25°C
(1) TC = Ta
(2) Without heat sink
PC = 2 W
30
10 I
CP
Collector current IC (A)
Collector power dissipation PC (W)
35
25
(1)
20
15
10
t = 1 ms
IC
t=1s
1
t = 10 ms
0.1
5
(2)
0
0.01
0
40
80
120
160
1
10
100
1 000
Collector-emitter voltage VCE (V)
Ambient temperature Ta (°C)
Rth  t
Thermal resistance Rth (°C/W)
1 000
Ta = 25°C
100
(1)
10
(2)
1
0.1
0.001
(1) Without heat sink
(2) With a 100 × 100 × 2 mm Al heat sink
0.01
0.1
1
10
100
Time t (s)
2
SJD00292AED
1 000
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
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product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
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• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
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2002 JUL