Power Transistors 2SD2659 Silicon NPN triple diffusion planar type Unit: mm For power switching 9.9±0.3 3.0±0.5 2.9±0.2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 80 V Collector-emitter voltage (Base open) VCEO 60 V Emitter-base voltage (Collector open) VEBO 6 V IC 3 A Peak collector current ICP 6 A PC 20 W TC = 25°C 1.4±0.2 1.6±0.2 2.6±0.1 0.8±0.1 0.55±0.15 2.54±0.30 5.08±0.50 1 Collector current dissipation 15.0±0.5 • High forward current transfer ratio hFE • Satisfactory linearity of forward current transfer ratio hFE • TO-220D built-in: Excellent package with withstand voltage 5 kV guaranteed φ 3.2±0.1 13.7±0.2 4.2±0.2 Solder Dip ■ Features Collector power 4.6±0.2 2 3 1: Base 2: Collector 3: Emitter TO-220D-A1 Package Internal Connection C 2 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C B E ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-emitter voltage (Base open) VCEO IC = 10 mA, IB = 0 Collector-base cutoff current (Emitter open) ICBO VCB = 80 V, IE = 0 100 µA Collector-emitter cutoff current (Base open) ICEO VCE = 60 V, IB = 0 100 µA Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0 100 µA Forward current transfer ratio hFE VCE = 4.0 V, IC = 0.5 A 1 500 VCE(sat) IC = 2.0 A, IB = 0.05 A Collector-emitter saturation voltage Transition frequency fT Conditions VCE = 12 V, IC = 0.2 A, f = 10 MHz Min Typ Max 60 Unit V 500 1.2 50 V MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: January 2003 SJD00292AED 1 2SD2659 PC Ta Safe operation area 100 Non repetitive pulse TC = 25°C (1) TC = Ta (2) Without heat sink PC = 2 W 30 10 I CP Collector current IC (A) Collector power dissipation PC (W) 35 25 (1) 20 15 10 t = 1 ms IC t=1s 1 t = 10 ms 0.1 5 (2) 0 0.01 0 40 80 120 160 1 10 100 1 000 Collector-emitter voltage VCE (V) Ambient temperature Ta (°C) Rth t Thermal resistance Rth (°C/W) 1 000 Ta = 25°C 100 (1) 10 (2) 1 0.1 0.001 (1) Without heat sink (2) With a 100 × 100 × 2 mm Al heat sink 0.01 0.1 1 10 100 Time t (s) 2 SJD00292AED 1 000 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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