Power Transistors 2SB1653 Silicon PNP triple diffusion planar type For power switching Unit: mm ● ● 10.8±0.2 ● High collector to emitter VCEO Low collector to emitter saturation voltage VCE(sat) Allowing automatic insertion with radial taping 90° 2.5±0.1 ■ Features 4.5±0.2 3.8±0.2 7.5±0.2 0.65±0.1 0.85±0.1 1.0±0.1 0.8C (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –400 V Collector to emitter voltage VCEO –400 V Emitter to base voltage VEBO –7 V Peak collector current ICP –1 A Collector current IC – 0.5 A Collector power dissipation PC 1.5 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 to +150 ˚C ■ Electrical Characteristics 0.8C 0.7±0.1 16.0±1.0 ■ Absolute Maximum Ratings 0.7±0.1 0.5±0.1 2.5±0.2 2.5±0.2 0.4±0.1 2.05±0.2 0.8C 1 2 1:Emitter 2:Collector 3:Base MT3 Type Package 3 (TC=25˚C) Parameter Symbol Conditions min typ max Unit ICBO VCB = –400V, IE = 0 –1 µA ICEO VCE = –100V, IB = 0 –1 µA Emitter cutoff current IEBO VEB = –5V, IC = 0 –1 mA Collector to emitter voltage VCEO IC = –1mA, IB = 0 Collector cutoff current hFE1 Forward current transfer ratio * hFE2 –400 VCE = –5V, IC = –50mA 80 VCE = –5V, IC = –300mA 10 V 280 Collector to emitter saturation voltage VCE(sat) IC = –100mA, IB = –10mA – 0.25 – 0.5 V Base to emitter saturation voltage VBE(sat) VCE = –100mA, IB = –10mA – 0.8 –1.2 V Transition frequency fT VCB = –10V, IE = 0.2A, f = 1MHz 20 Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 25 Turn-on time ton IC = –100mA, 1.0 µs Storage time tstg IB1 = –10mA, IB2 = 10mA, 0.8 µs Fall time tf VCC = –150V, RL = 1.5kΩ 1.0 µs *h FE1 MHz 50 pF Rank classification Rank P Q hFE1 80 to 160 130 to 280 1 Power Transistors 2SB1653 IC — VCE Ta=25˚C –9mA –8mA IB=–10mA –400 1.6 Collector current IC (mA) Collector power dissipation PC (W) Without heat sink –7mA –320 1.2 0.8 –2mA –160 0.4 –1mA 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) hFE — IC 25˚C –25˚C 80 40 –10 –100 Collector current IC (mA) –1000 Collector output capacitance Cob (pF) Ta=75˚C 0 –1 –6 –8 –10 –12 Cob — VCB 200 120 –4 60 VCE=–5V 160 –2 Collector to emitter voltage VCE (V) 240 –10 IC/IB=10 –1 – 0.1 Ta=75˚C –25˚C 25˚C – 0.01 –80 0 Forward current transfer ratio hFE –5mA –4mA –3mA –6mA –240 0 2 VCE(sat) — IC –480 Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 2.0 IE=0 f=1MHz TC=25˚C 50 40 30 20 10 0 –1 –10 –100 Collector to base voltage VCB (V) – 0.001 –1 –10 –100 Collector current IC (mA) –1000