Power Transistors 2SC5552 Silicon NPN triple diffusion mesa type Unit: mm 15.5±0.5 ■ Absolute Maximum Ratings TC = 25°C (23.4) (4.5) (1.2) 5° 5° 1.1±0.1 0.7±0.1 Collector to base voltage VCBO 1 700 V Collector to emitter voltage VCES 1 700 V VCEO 600 V Emitter to base voltage VEBO 7 V Peak collector current ICP 30 A Collector current IC 16 A Base current IB 8 A PC 65 W 10.9±0.5 5° 1 2 5.5±0.3 Unit Ta = 25°C 5° (4.0) 2.0±0.2 3 1: Base 2: Collector 3: Emitter TOP-3E Package (2.0) Rating TC = 25°C 3.0±0.3 5° 5.45±0.3 Symbol 3.3±0.3 Parameter (2.0) • High breakdown voltage, and high reliability through the use of a glass passivation layer • High-speed switching • Wide area of safe operation (ASO) 26.5±0.5 (10.0) 5° 18.6±0.5 (2.0) Solder Dip ■ Features Collector power dissipation φ 3.2±0.1 22.0±0.5 For horizontal deflection output Marking Symbol: C5552 Internal Connection C 3.5 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C B E ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Symbol Conditions Max Unit 50 µA VCB = 1 700 V, IE = 0 1 mA VEB = 7 V, IC = 0 50 µA ICBO Emitter cutoff current IEBO hFE VCE = 5 V, IC = 8 A Forward current transfer ratio Min Typ VCB = 1 000 V, IE = 0 Collector cutoff current Collector to emitter saturation voltage VCE(sat) IC = 8 A, IB = 2 A Base to emitter saturation voltage VBE(sat) IC = 8 A, IB = 2 A 6 12 3 1.5 V V Transition frequency fT VCE = 10 V, IC = 0.1 A, f = 0.5 MHz Storage time tstg IC = 8 A, Resistance loaded 3.0 µs Fall time tf IB1 = 2 A, IB2 = −4 A 0.2 µs 3 MHz 1