Infrared Light Emitting Diodes LN66 GaAs Infrared Light Emitting Diode Unit : mm ø5.0±0.2 7.65±0.2 Not soldered Features High-power output, high-efficiency : PO = 8 mW (typ.) 1.0 For optical control systems Good radiant power output linearity with respect to input current Wide directivity : θ = 25 deg. (typ.) 13.5±1.0 11.5±1.0 3.6±0.3 1.0 Emitted light spectrum suited for silicon photodetectors 2-1.0±0.15 2-0.6±0.15 Transparent epoxy resin package ø6.0±0.2 Absolute Maximum Ratings (Ta = 25˚C) Parameter Symbol Ratings Unit PD 160 mW Forward current (DC) IF 100 mA Pulse forward current IFP* 1.5 A Power dissipation * Reverse voltage (DC) VR 3 V Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg – 40 to +100 ˚C 0.6±0.15 2.54 2 1 1: Cathode 2: Anode f = 100 Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25˚C) Parameter * Symbol * Conditions IF = 50mA min 5 typ max Unit Radiant power PO Peak emission wavelength λP IF = 50mA 8 mW 950 nm Spectral half band width ∆λ IF = 50mA 50 Forward voltage (DC) VF IF = 100mA 1.3 Reverse current (DC) IR VR = 3V Capacitance between pins Ct VR = 0V, f = 1MHz 35 pF Half-power angle θ The angle in which radiant intencity is 50% 25 deg. nm 1.6 V 10 µA PO Classifications Class R S PO (mW) 5 to 8 >7 1 Infrared Light Emitting Diodes LN66 IF — Ta IFP — Duty cycle 120 tw = 10µs Ta = 25˚C 60 40 20 0 20 40 60 80 1 10 –1 10 –2 10 –3 10 –2 100 10 –1 Ambient temperature Ta (˚C ) 40 0 10 2 10 0 0.4 10 (2) 1.6 2.0 ∆PO — Ta IF = 50mA VF (V) (1) 1.2 10 IF = 100mA 10 2 0.8 Forward voltage VF (V) VF — Ta Forward voltage Relative radiant rower ∆PO 1 1.6 (1) tw = 10µs f = 100Hz (2) DC Ta = 25˚C 1 60 Duty cycle (%) ∆PO — IFP 10 3 80 20 1.2 50mA 10mA 0.8 0.4 Relative radiant power ∆PO 0 – 25 100 10 IF (mA) Pulse forward current Allowable forward current 80 Ta = 25˚C Forward current IFP (A) IF (mA) 10 2 100 IF — VF 120 1 10 –1 10 –1 1 10 10 2 10 3 0 – 40 10 4 Pulse forward current IFP (mA) λP — Ta 1000 0 40 120 10 –2 – 40 0 40 Spectral characteristics Directivity characteristics 0˚ IF = 50mA Ta = 25˚C Relative radiant intensity (%) 940 920 80 80 70 60 60 50 40 40 30 20 20 10˚ 20˚ 100 90 960 120 Ambient temperature Ta (˚C ) 100 980 80 Ambient temperature Ta (˚C ) IF = 50mA Peak emission wavelength λP (nm) 80 Relative radiant intensity (%) 10 –2 30˚ 40˚ 50˚ 60˚ 70˚ 80˚ 90˚ 900 – 40 0 40 80 Ambient temperature Ta (˚C ) 2 120 0 860 900 940 980 1020 1060 1100 Wavelength λ (nm) LN66 Infrared Light Emitting Diodes Frequency characteristics 10 Ta = 25˚C Modulation output 1 10 –1 10 –2 10 –3 10 10 2 Frequency 10 3 10 4 f (kHz) 3