Ordering number : ENA1711A ATP114 P-Channel Power MOSFET http://onsemi.com –60V, –55A, 16mΩ, Single ATPAK Features • • • ON-resistance RDS(on)1=12mΩ(typ.) 4V drive Protection diode in Input Capacitance Ciss=4000pF(typ.) Halogen free compliance • • Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) Unit --60 V ±20 V --55 A Allowable Power Dissipation ID IDP PD Channel Temperature Tch 150 Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 100 mJ --28 A Drain Current (PW≤10μs) Avalanche Current *2 PW≤10μs, duty cycle≤1% Tc=25°C --165 A 60 W °C Note : *1 VDD=--15V, L=200μH, IAV=--28A *2 L≤100μH, Single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7057-001 • Package : ATPAK • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel ATP114-TL-H 1.5 6.5 ATP114 6.05 4.6 9.5 7.3 Electrical Connection 0.6 0.55 0.7 1.7 3 0.8 TL 2,4 2 0.5 Marking LOT No. 1 0.4 2.3 0.1 2.3 0.4 0.4 0.5 4 Packing Type: TL 4.6 2.6 Semiconductor Components Industries, LLC, 2013 July, 2013 1 : Gate 2 : Drain 3 : Source 4 : Drain ATPAK 1 3 61312 TKIM/70710PA TKIM TC-00002342 No. A1711-1/7 ATP114 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions ID=--1mA, VGS=0V VDS=--60V, VGS=0V Ratings min typ max --60 Unit V Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) VGS=±16V, VDS=0V VDS=--10V, ID=--1mA Forward Transfer Admittance | yfs | VDS=--10V, ID=--28A 65 RDS(on)1 ID=--28A, VGS=--10V 12 16 mΩ RDS(on)2 ID=--14A, VGS=--4.5V 15 21 mΩ RDS(on)3 ID=--7A, VGS=--4V 16.5 24 mΩ Static Drain-to-Source On-State Resistance Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time --1.2 --1 μA ±10 μA --2.6 4000 pF 400 pF Crss 315 pF td(on) tr 19 ns 200 ns 450 ns Fall Time td(off) tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=--20V, f=1MHz V S See specified Test Circuit. VDS=--30V, VGS=--10V, ID=--55Ap 300 ns 92 nC 15 nC 15.5 IS=--55A, VGS=0V --0.95 nC --1.5 V Switching Time Test Circuit 0V --10V VDD= --30V VIN ID= --28A RL=1.07Ω VIN D PW=10μs D.C.≤1% VOUT G ATP114 P.G 50Ω S Ordering Information Device ATP114-TL-H Package Shipping memo ATPAK 3,000pcs./reel Pb Free and Halogen Free No. A1711-2/7 ATP114 --20 VGS= --2.5V --15 Tc= -- --60 --50 --40 --30 --20 --10 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 Drain-to-Source Voltage, VDS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID= --7A --14A --28A 20 15 10 5 0 --2 --4 --6 --8 --10 --12 --14 Gate-to-Source Voltage, VGS -- V 5 °C 25 3 2 = Tc 10 C 5° --2 °C 75 7 5 3 2 1.0 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 Drain Current, ID -- A 7 3 tr 5 td(on) 2 15 10 5 --40 --20 0 20 VDD= --30V VGS= --10V 2 3 5 7 --1.0 2 3 5 7 --10 60 80 100 120 2 Drain Current, ID -- A 3 5 7--100 2 IT15708 140 160 IT15705 VGS=0V Single pulse --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 Diode Forward Voltage, VSD -- V --1.4 IT15707 Ciss, Coss, Crss -- VDS f=1MHz Ciss 3 2 1000 7 5 Coss 3 Crss 2 10 7 --0.1 40 IS -- VSD 5 100 3 20 7 2 --4.0 IT15703 7A = -I D , V 4.0 14A = -= -S I G D A V 5V, --28 --4. I D= = , V V GS --10.0 = VGS 10000 tf 7 25 2 --100 7 5 3 2 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 --0.01 7 5 3 2 --0.001 0 td(off) 5 --3.5 Case Temperature, Tc -- °C Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 7 5 --3.0 30 IT15706 SW Time -- ID 1000 3 --2.5 Single pulse Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 7 --2.0 RDS(on) -- Tc 0 --60 --16 VDS= --10V Single pulse 100 --1.5 Gate-to-Source Voltage, VGS -- V IT15704 | yfs | -- ID 2 --1.0 --0.5 35 Tc=25°C Single pulse 30 25 0 IT15702 RDS(on) -- VGS 35 0 --2.0 --25°C --0.4 5°C 25°C --0.2 Tc= 7 0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 0 25 °C --10 --5 Tc= 75° C --2 5°C --25 25°C 75°C .5V --3 --4 . --4 . Drain Current, ID -- A --30 --6 . --35 --3.0V 0V V --10. 0 --40 VDS= --10V --70 --16 .0 Drain Current, ID -- A --45 ID -- VGS --80 5V V --8 .0 V --50 0V Tc=25°C 25°C ID -- VDS --55 100 0 --10 --20 --30 --40 --50 Drain-to-Source Voltage, VDS -- V --60 IT15709 No. A1711-3/7 ATP114 VGS -- Qg --10 3 2 --7 --6 --5 10 20 30 40 50 60 70 80 PD -- Tc 100 40 30 20 10 20 40 60 80 100 3 5 7 --1.0 120 Case Temperature, Tc -- °C 140 160 IT15513 2 3 5 7 --10 2 3 Drain-to-Source Voltage, VDS -- V EAS -- Ta 120 50 0 2 IT15710 60 0 Tc=25°C Single pulse --0.1 --0.1 Avalanche Energy derating factor -- % 70 90 n 3 2 io --1 0 Operation in this area is limited by RDS(on). 3 2 --1.0 7 5 Total Gate Charge, Qg -- nC Allowable Power Dissipation, PD -- W --10 7 5 --2 0 1m s 10 m 10 s 0m s 3 2 at --3 ID= --55A 10 μs 10 0μ s er --4 --100 7 5 op Drain Current, ID -- A --8 IDP= --165A (PW≤10μs) C D Gate-to-Source Voltage, VGS -- V --9 ASO 5 VDS= --30V ID= --55A 5 7--100 IT15512 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT15179 No. A1711-4/7 ATP114 Taping Specification ATP114-TL-H No. A1711-5/7 ATP114 Outline Drawing ATP114-TL-H Land Pattern Example Mass (g) Unit 0.266 mm * For reference Unit: mm 6.7 6.5 1.6 2 1.5 2.3 2.3 No. A1711-6/7 ATP114 Note on usage : Since the ATP114 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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