ATP301 D

Ordering number : ENA1457A
ATP301
P-Channel Power MOSFET
http://onsemi.com
–100V, –28A, 75mΩ, ATPAK
Features
•
•
ON-resistance RDS(on)=57mΩ (typ.)
10V drive
•
•
Input capacitance Ciss=4000pF (typ.)
Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
ID
IDP
Drain Current (Pulse)
Allowable Power Dissipation
Unit
--100
PW≤10μs, duty cycle≤1%
V
--28
A
--112
A
70
W
Channel Temperature
PD
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
IAV
54
mJ
--28
A
Avalanche Current *2
Tc=25°C
V
±20
Note : *1 VDD=--30V, L=100μH, IAV=--28A
*2 L≤100μH, Single pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7057-001
• Package
: ATPAK
• JEITA, JEDEC
:• Minimum Packing Quantity : 3,000 pcs./reel
ATP301-TL-H
1.5
6.5
Marking
ATP301
0.4
0.4
0.5
4
Packing Type: TL
4.6
2.6
6.05
4.6
9.5
7.3
LOT No.
TL
Electrical Connection
3
0.4
2.3
0.1
2.3
0.6
0.55
0.7
0.5
1
0.8
1.7
2,4
2
Semiconductor Components Industries, LLC, 2013
July, 2013
1 : Gate
2 : Drain
3 : Source
4 : Drain
ATPAK
1
3
62712 TKIM/42209QA MS IM TC-00001941 No. A1457-1/7
ATP301
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Ratings
Conditions
min
ID=--1mA, VGS=0V
VDS=--100V, VGS=0V
Drain-to-Source Breakdown Voltage
V(BR)DSS
Zero-Gate Voltage Drain Current
IDSS
Gate-to-Source Leakage Current
IGSS
Cutoff Voltage
VGS(off)
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
Forward Transfer Admittance
| yfs |
VDS=--10V, ID=--14A
Static Drain-to-Source On-State Resistance
RDS(on)
ID=--14A, VGS=--10V
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
typ
Unit
max
--100
V
--2.0
--1
μA
±10
μA
--3.5
32
V
S
57
75
mΩ
4000
pF
270
pF
Crss
150
pF
Turn-ON Delay Time
td(on)
32
ns
Rise Time
tr
130
ns
Turn-OFF Delay Time
td(off)
330
ns
Fall Time
tf
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
See specified Test Circuit.
VDS=--60V, VGS=--10V, ID=--28A
Switching Time Test Circuit
0V
--10V
VDS=--20V, f=1MHz
190
ns
73
nC
16
nC
14
IS=--28A, VGS=0V
nC
--1.0
--1.5
V
Avalanche Resistance Test Circuit
VDD= --60V
VIN
L
≥50Ω
RG
ID= --14A
RL=4.3Ω
VIN
D
PW=10μs
D.C.≤1%
VOUT
ATP301
0V
--10V
G
VDD
50Ω
ATP301
P.G
50Ω
S
Ordering Information
Device
ATP301-TL-H
Package
Shipping
memo
ATPAK
3,000pcs./reel
Pb Free and Halogen Free
No. A1457-2/7
ATP301
--1.5 --2.0 --2.5 --3.0
--3.5 --4.0
Drain-to-Source Voltage, VDS -- V
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Single pulse
ID= --14A
160
140
120
Tc=75°C
80
25°C
60
--25°C
40
20
0
--2
--3
--4
--5
--6
--7
--8
--9
Gate-to-Source Voltage, VGS -- V
°C
25
C
5°
--2
=
Tc
°C
75
10
7
5
3
2
1.0
7
5
--0.1
2
3
5
7 --1.0
2
3
5
7 --10
2
Drain Current, ID -- A
5
VDD= --60V
VGS= --10V
7
5
td(off)
2
tf
100
7
tr
5
td(on)
3
25°C
5°C
14A
100
= -, ID
V
0
1
80
= -V GS
60
40
20
0
--25
25
3
5
7 --1.0
2
3
5
7 --10
Drain Current, ID -- A
2
3
5
IT14598
75
100
125
150
IT14595
IS -- VSD
--10
7
5
3
2
0
--0.2
--0.4
--0.6
--0.8
--1.0
Diode Forward Voltage, VSD -- V
--1.2
IT14597
Ciss, Coss, Crss -- VDS
10000
f=1MHz
7
5
Ciss
3
2
1000
7
5
Coss
3
2
2
50
VGS=0V
Single pulse
Crss
2
10
--0.1
C
Tc=
7
120
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.01
7
5
3
2
--0.001
Ciss, Coss, Crss -- pF
3
--6
IT14593
140
IT14596
SW Time -- ID
1000
Switching Time, SW Time -- ns
3
--5
Single pulse
--100
7
5
3
2
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
3
--4
Case Temperature, Tc -- °C
5
2
--3
RDS(on) -- Tc
0
--50
--10
VDS= --10V
7
--2
Cutoff Voltage, VGS(off) -- V
IT14594
| yfs | -- ID
100
--1
160
180
100
0
IT14592
RDS(on) -- VGS
200
0
--4.5 --5.0
5°C
--0.5 --1.0
Tc=
7
0
25
°C
--10
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
0
--20
--25°
C
VGS= --4.0V
--10
--30
25°C
0V
0.
--4.5V
--20
--40
--25
°
Drain Current, ID -- A
--50
--40
--30
VDS= --10V
75°C
0V
.
--6
.0V
--8
--1
Drain Current, ID -- A
--50
ID -- VGS(off)
--60
Tc=25°C
Tc=
--25°
C
ID -- VDS
--60
100
7
0
--5
--10
--15
--20
--25
Drain-to-Source Voltage, VDS -- V
--30
IT14599
No. A1457-3/7
ATP301
VGS -- Qg
--10
VDS= --60V
ID= --28A
--8
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
--9
--7
--6
--5
--4
--3
--1
0
10
20
30
40
50
60
Total Gate Charge, Qg -- nC
PD -- Tc
80
60
50
40
30
20
10
0
20
40
60
80
100
PW≤10μs
10
μs
10
0
μ
1m
s
10 s
10 ms
DC
0
ms
op
era
tio
n
ID= --28A
--10
7
5
3
2
--1.0
7
5
3
2
Operation in
this area is
limited by RDS(on).
120
Case Temperature, Tc -- °C
140
160
IT14602
2
3
5 7 --10
2
3
5 7--100 2
IT14601
Drain-to-Source Voltage, VDS -- V
EAS -- Ta
120
70
0
--100
7
5
3
2
IT14600
Avalanche Energy derating factor -- %
Allowable Power Dissipation, PD -- W
80
70
IDP= --112A
--0.1
7
5
3 Tc=25°C
2
Single pulse
--0.01
2 3 5 7 --1.0
--0.1
--2
0
ASO
3
2
100
80
60
40
20
0
0
25
50
75
100
125
Ambient Temperature, Ta -- °C
150
175
IT14603
No. A1457-4/7
ATP301
Taping Specification
ATP301-TL-H
No. A1457-5/7
ATP301
Outline Drawing
ATP301-TL-H
Land Pattern Example
Mass (g) Unit
0.266 mm
* For reference
Unit: mm
6.7
6.5
1.6
2
1.5
2.3
2.3
No. A1457-6/7
ATP301
Note on usage : Since the ATP301 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A1457-7/7